Method for manufacturing semiconductor device, and semiconductor device

Patent metadata

Field	Value
Publication number	US-9705286-B2
Application number	US-201615047774-A
Country	US
Kind code	B2
Filing date	Feb 19, 2016
Priority date	Feb 23, 2015
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

With a method for manufacturing a semiconductor device, a semiconductor layer having a protrusion on a main face is formed. The protrusion includes an upper face and side faces. A conductive layer on a region that includes at least the upper face and the side faces of the protrusion is formed. A first mask that partially covers a surface of the conductive layer is formed. A part of the conductive layer is etched by using the first mask in a first etching process. A second mask that at least partially covers the surface of the conductive layer that has undergone the first etching process is formed. A part of the conductive layer is etched by using the second mask to expose a part of the semiconductor layer and to form the conductive layer into an electrode in a second etching process.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor layer having a protrusion on a main face, the protrusion having an upper face and side faces;
forming a conductive layer on a region that includes at least the upper face and the side faces of the protrusion;
forming a first mask that partially covers a surface of the conductive layer;
etching a part of the conductive layer by using the first mask in a first etching process;
forming a second mask that at least partially covers the surface of the conductive layer that has undergone the first etching process; and
etching a part of the conductive layer by using the second mask to expose a part of the semiconductor layer and to form the conductive layer into an electrode in a second etching process.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein at least one of the first etching process and the second etching process is performed by wet etching.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the forming of the conductive layer includes forming the conductive layer from a conductive oxide or an alloy.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein the forming of the conductive layer includes forming the conductive layer on a region that includes upper faces of the semiconductor layer on both sides of the protrusion, as well as the region that includes the upper face and the side faces of the protrusion.

5. The method for manufacturing a semiconductor device according to claim 1 , wherein the protrusion has a shape that extends in a first direction, and
the forming of the first mask includes forming the first mask at a first distance away, in the first direction, from a planned division line, which is an imaginary line that intersects the first direction and along which the semiconductor layer is divided after the conductive layer has been formed into the electrode.

6. The method for manufacturing a semiconductor device according to claim 5 , wherein the forming of the second mask includes forming the second mask at a second distance away from the planned division line in the first direction, the second distance being shorter than the first distance.

7. The method for manufacturing a semiconductor device according to claim 1 , wherein the forming of the semiconductor layer further includes forming a recess on the main surface of the semiconductor layer in a region other than where the protrusion is formed, and
the forming the conductive layer includes forming a part of the conductive layer within the recess.

8. The method for manufacturing a semiconductor device according to claim 7 , further comprising
after the second etching process, forming a third mask that covers from a part of the semiconductor layer exposed by the second etching to the electrode formed by the second etching process, and
etching the part of the conductive layer formed within the recess by using the third mask in a third etching process.

9. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor layer having a protrusion on a main face, the protrusion having at an upper face and side faces;
forming a conductive layer on a region that includes at least the upper face and the side faces of the protrusion;
forming a first mask that partially covers a surface of the conductive layer;
etching a part of the conductive layer by using the first mask in a first etching process;
removing the first mask;
forming a second mask that covers continuously a part of the surface of the conductive layer that is exposed after removal of the first mask and a part of the surface of the conductive layer that has undergone the first etching process; and
etching a part of the conductive layer by using the second mask to expose a part of the semiconductor layer and to form the conductive layer into an electrode in a second etching process.

10. The method for manufacturing a semiconductor device according to claim 9 , wherein at least one of the first etching process and the second etching process is performed by wet etching.

11. The method for manufacturing a semiconductor device according to claim 9 , wherein the forming of the conductive layer includes forming the conductive layer from a conductive oxide or an alloy.

12. The method for manufacturing a semiconductor device according to claim 9 , wherein the forming of the conductive layer includes forming the conductive layer on a region that includes upper faces of the semiconductor layer on both sides of the protrusion, as well as the region that includes the upper face and the side faces of the protrusion.

13. The method for manufacturing a semiconductor device according to claim 9 , wherein the protrusion has a shape that extends in a first direction, and
the forming of the first mask includes forming the first mask at a first distance away, in the first direction, from a planned division line, which is an imaginary line that intersects the first direction and along which the semiconductor layer is divided after the conductive layer has been formed into the electrode.

14. The method for manufacturing a semiconductor device according to claim 13 , wherein the forming of the second mask includes forming the second mask at a second distance away from the planned division line in the first direction, the second distance being shorter than the first distance.

15. The method for manufacturing a semiconductor device according to claim 9 , wherein the forming of the semiconductor layer further includes forming a recess on the main surface of the semiconductor layer in a region other than where the protrusion is formed, and
the forming the conductive layer includes forming a part of the conductive layer within the recess.

16. The method for manufacturing a semiconductor device according to claim 15 , further comprising,
after the second etching, forming a third mask that covers from a part of the semiconductor layer exposed by the second etching to the electrode formed by the second etching process, and
etching the part of the conductive layer formed within the recess by using the third mask in a third etching process.

17. A semiconductor device comprising:
a semiconductor layer having a main face and a first end, which is an end that intersects a first direction, the semiconductor layer having a protrusion that protrudes upward and extends in the first direction; and
an electrode disposed on and contacting with at least an upper face of the protrusion, the electrode being disposed at a first distance in the first direction away from the first end, and a thickness of a thin portion of the electrode formed on a first end side being less than a thickness of a thick portion of the electrode formed on an interior side with a lower face of the thin portion being coplanar with a lower face of the thick portion.

18. The semiconductor device according to claim 17 , wherein the semiconductor layer includes a second end which is parallel to the first end in the first direction, and
a thickness of a portion of the electrode formed on a second end side is less than the thickness of the portion of the electrode formed on the interior side.

19. The semiconductor device according to claim 18 , wherein a width of the portion of the electrode formed on the first end side is greater than a width of the portion of the electrode formed on the second end side.

Assignees

• Nichia Corp

Inventors

• Harada Susumu

Classifications

• H01S5/2081

  using special etching techniques · CPC title

• H01S5/34333

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title

• H01S5/1017

  Waveguide having a void for insertion of materials to change optical properties · CPC title

• H01S5/16

  Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence) · CPC title

• H01S5/2214

  based on oxides or nitrides · CPC title