Gas supply apparatus

Patent metadata

Field	Value
Publication number	US-11453945-B2
Application number	US-202016888898-A
Country	US
Kind code	B2
Filing date	Jun 1, 2020
Priority date	Jan 6, 2016
Publication date	Sep 27, 2022
Grant date	Sep 27, 2022

Abstract

A gas ejector of a gas supply apparatus includes a nozzle portion. The opening of a first-stage restricting cylinder constituting the nozzle portion has a circular cross-sectional shape with a diameter r1. A second-stage restricting cylinder is continuously formed with the first-stage restricting cylinder along a Z direction. The opening of the second-stage restricting cylinder has a circular cross-sectional shape with a diameter r2, and supplies a source gas supplied from the first-stage restricting cylinder to a low-vacuum processing chamber below. At this time, the diameter r2 is set to satisfy “r2>r1”.

First claim

The invention claimed is:

1. A gas supply apparatus comprising:
a mount for mounting a substrate to be processed;
a gas ejector above said mount, said gas ejector including a processing chamber that extends at least partially along said mount; and
an exhaust port between said processing chamber and said mount, wherein
said gas ejector includes:
a primary accommodating chamber which temporarily accommodates gas supplied from a gas supply port; and
a nozzle portion between said primary accommodating chamber and said processing chamber, wherein the nozzle portion supplies gas through said processing chamber to said substrate to be processed;

said nozzle portion has:
a first restricting cylinder in an uppermost portion of said nozzle portion, the first restricting cylinder having a first opening having a circular cross-sectional shape with a first diameter in plan view, and which supplies the gas in said primary accommodating chamber downward;
a second restricting cylinder being continuously formed with said first restricting cylinder, the second restricting cylinder having a second opening having a circular cross-sectional shape with a second diameter in plan view, and which supplies the gas supplied from said first restricting cylinder to said processing chamber; and
a third restricting cylinder in a lowermost portion of said nozzle portion and being continuously formed with said second restricting cylinder, the third restricting cylinder having a third opening having a circular cross-sectional shape with a third diameter in plan view, and which supplies the gas supplied from said second restricting cylinder to said processing chamber,

said gas ejector has only one said nozzle portion,
said first diameter is set such that pressure difference between said primary accommodating chamber and said processing chamber is not less than 30 times,
said second diameter is longer than said first diameter,
said third diameter is longer than said second diameter,
said first diameter of said first restricting cylinder is not greater than 2 mm in diameter and a formation length of said first restricting cylinder is not greater than 2 mm,
said first diameter is constant along a height direction in said first restricting cylinder, said second diameter is constant along the height direction in said second restricting cylinder, said third diameter is constant along the height direction in said third restricting cylinder, and
said nozzle portion has only one of said first restricting cylinder, one of said second restricting cylinder and one of said third restricting cylinder.

2. The gas supply apparatus according to claim 1 ,
wherein said second diameter of said second restricting cylinder is within 30 mm in diameter.

3. The gas supply apparatus according to claim 1 ,
wherein said gas ejector includes one of quartz and an alumina material as a constituent material.

4. The gas supply apparatus according to claim 1 ,
wherein said gas ejector is heated to not lower than 100° C. so as to supply heated gas to said substrate to be processed.

5. The gas supply apparatus according to claim 1 ,
wherein the gas supplied from said gas supply port is gas containing at least nitrogen, oxygen, fluorine, and hydrogen.

6. The gas supply apparatus according to claim 1 ,
wherein the gas supplied from said gas supply port is a precursor gas.

7. The gas supply apparatus according to claim 1 ,
wherein a gas flow rate of the gas supplied from said gas supply port is controlled such that pressure in said processing chamber is not higher than atmospheric pressure and not lower than 10 kPa.

8. The gas supply apparatus according to claim 1 further comprising:
a gas ionizer near a boundary region between said primary accommodating chamber and said nozzle portion, wherein the gas ionizer produces one of an ionized gas and a radicalized gas by ionizing the gas supplied from said gas supply port.

9. The gas supply apparatus according to claim 8 , wherein
said gas ionizer includes a first electrode and a second electrode facing each other, a discharge space being between said first electrode and said second electrode, and at least one of said first electrode and said second electrode has a dielectric on a surface forming said discharge space,
said first restricting cylinder is formed of a through hole formed in said second electrode, and
one of said ionized gas and said radicalized gas is supplied to said processing chamber, the one of said ionized gas and said radicalized gas being obtained by applying an alternating voltage between said first electrode and said second electrode, and generating dielectric-barrier discharge in said discharge space.

10. The gas supply apparatus according to claim 1 , wherein a transition between the second diameter and the third diameter is not continuous.

11. The gas supply apparatus according to claim 1 , wherein the third diameter is a largest diameter of the nozzle portion.

12. The gas supply apparatus according to claim 1 , said nozzle portion consists essentially of said first restricting cylinder, said second restricting cylinder and said third restricting cylinder.

Assignees

• Toshiba Mitsubishi Electric Industrial Systems Corp

Inventors

• Nishimura Shinichi
• Watanabe Kensuke
• Tabata Yoichiro

Classifications

• H10P14/60

  of insulating materials · CPC title

• H01J37/32348 Primary

  Dielectric barrier discharge · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/4557 Primary

  Heated nozzles · CPC title