Majority logic gate based flip-flop with non-linear polar material

US11451232B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11451232-B2
Application numberUS-202117390830-A
CountryUS
Kind codeB2
Filing dateJul 30, 2021
Priority dateDec 21, 2020
Publication dateSep 20, 2022
Grant dateSep 20, 2022

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A low power sequential circuit (e.g., latch) uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The sequential circuit includes a 3-input majority gate having first, second, and third inputs, and a first output. The sequential circuit includes a driver coupled to the first output, wherein the driver is to generate a second output. The sequential circuit further includes an exclusive-OR (XOR) gate to receive a clock and the second output, wherein the XOR gate is to generate a third output which couples to the second input, where the first input is to receive a data, and wherein the third input is to receive the second output.

First claim

Opening claim text (preview).

We claim: 1. An apparatus comprising: a first latch comprising a first data input, a first data output, and a first clock input, wherein the first latch comprises a first 3-input majority gate having a first capacitor with non-linear polar material; a second latch comprising a second data input, a second data output, and a second clock input, wherein the second latch comprises a second 3-input majority gate having a second capacitor with non-linear polar material, and wherein the first data output is coupled to the second data input; and a logic gate coupled to the first clock input and the second clock input. 2. The apparatus of claim 1 , wherein the first 3-input majority gate comprises first, second, and third non-ferroelectric capacitors to receive the first data input, a second input, and a third input, respectively. 3. The apparatus of claim 2 , wherein the first 3-input majority gate comprises a non-linear polar capacitor to store a majority function output of the first data input, the second input, and the third input, and wherein one terminal of the non-linear polar capacitor provides an output of the first 3-input majority gate. 4. The apparatus of claim 3 , comprising: a first transistor coupled to a first terminal of the non-linear polar capacitor, wherein the first transistor is controllable by a first signal; a second transistor coupled to a second terminal of the non-linear polar capacitor, wherein the second transistor is controllable by a second signal; and a third transistor coupled to the second terminal of the non-linear polar capacitor, wherein the third transistor is controllable by a third signal. 5. The apparatus of claim 4 , wherein the first transistor, the second transistor, and the third transistor are disabled in an evaluation phase, and enabled in a reset phase, wherein the reset phase is prior to the evaluation phase. 6. The apparatus of claim 2 , wherein the first latch comprises: a driver coupled to an output of the first 3-input majority gate, wherein the driver is to generate an amplified output of the first 3-input majority gate, and wherein the amplified output is coupled to the third input. 7. The apparatus of claim 6 , wherein the first latch comprises: a compare logic to receive the first clock input and the amplified output, wherein an output of the compare logic is coupled to the second input of the first 3-input majority gate. 8. The apparatus of claim 6 , wherein the driver comprises one of: a buffer, an amplifier, NAND, AND, OR, multiplexer, or NOR logic gates. 9. The apparatus of claim 7 , wherein the compare logic comprises an exclusive-OR (XOR) gate. 10. The apparatus of claim 2 , wherein the first, second, and third non-ferroelectric capacitors of the first 3-input majority gate comprise one of: metal-insulator-metal (MIM) capacitor, transistor gate capacitor, hybrid of metal and transistor capacitor; or capacitor comprising paraelectric material. 11. The apparatus of claim 1 , wherein the logic gate is an inverting gate. 12. The apparatus of claim 1 , wherein the non-linear polar material includes one of: ferroelectric material, paraelectric material, or non-linear dielectric material. 13. The apparatus of claim 12 , wherein the ferroelectric material includes one of: Bismuth ferrite (BFO) with a doping material wherein the doping material is one of Lanthanum, or elements from lanthanide series of a periodic table; Lead zirconium titanate (PZT), or PZT with a doping material, wherein the doping material is one of La or Nb; a relaxor ferroelectric which includes one of lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN), Barium Titanium-Bismuth Zinc Niobium Tantalum (BT-BZNT), or Barium Titanium-Barium Strontium Titanium (BT-BST); perovskite ferroelectrics which include one of: BaTiO3, PbTiO3, KNbO3, or NaTaO3; a hexagonal ferroelectric which includes one of: YmnO3 or LuFeO3; hexagonal ferroelectrics which include one of a type h-RmnO3, where R is a rare earth element including one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium(Tm) , ytterbium (Yb), or yttrium (Y); Hafnium (Hf), Zirconium (Zr), Aluminum (Al), Silicon (Si), their oxides or their alloyed oxides; Hafnium oxides of a form, Ex Oy where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N or Al(1-x-y)Mg(x)Nb(y)N, y doped HfO2, where x includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y, wherein ‘x’ is a fraction; Niobate type compounds LiNbO3, LiTaO3, Lithium iron Tantalum Oxy Fluoride, Barium Strontium Niobate, Sodium Barium Niobate, or Potassium strontium niobate; or an improper ferroelectric which includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to 100. 14. An apparatus comprising: a first latch comprising a first data input, a first data output, and a first clock input, wherein the first latch a first capacitor with non-linear polar material; a second latch comprising a second data input, a second data output, and a second clock input, wherein the second latch comprises a second capacitor with non-linear polar material, and wherein the first data output is coupled to the second data input; and an inverting logic gate coupled to the first clock input and the second clock input. 15. The apparatus of claim 14 , wherein the first latch comprises a first 3-input majority gate including the first capacitor, and wherein the second latch comprises a second 3-input majority gate including the second capacitor. 16. The apparatus of claim 15 , wherein the first 3-input majority gate comprises first, second, and third non-ferroelectric capacitors to receive the first data input, a second input, and a third input, respectively. 17. The apparatus of claim 16 , wherein the first capacitor to store a majority function output of the first data input, the second input, and the third input, wherein one terminal of the first capacitor provides an output of the first 3-input majority gate, wherein the apparatus comprises: a driver coupled to the output of the first 3-input majority gate, wherein the driver is to generate an amplified output of the first 3-input majority gate, and wherein the amplified output is coupled to the third input; and a compare logic to receive the first clock input and the amplified output, wherein an output of the compare logic is coupled to the second input of the first 3-input majority gate. 18. A system comprising: a processor circuitry to execute one or more instructions; a communication interface communicatively coupled to the processor circuitry; and a memory coupled to the processor circuitry, wherein the memory is to store the one or more instructions, and wherein the processor circuitry comprises a flip-flop which includes: a first latch comprising a first data input, a first data output, and a first clock input, wherein the first latch a first capacitor with non-linear polar material; a second latch comprising a second data input, a second data output, and a second clock input, wherein the second latch comprises a second capacitor with non-linear polar material, and wherein the first data output is coupled to the second data input; and an inverting logic gate coupled to the first clock input and the second clock input.

Assignees

Inventors

Classifications

  • H03K19/23Primary

    Majority or minority circuits, i.e. giving output having the state of the majority or the minority of the inputs · CPC title

  • Arrangements for reducing power consumption · CPC title

  • EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical · CPC title

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What does patent US11451232B2 cover?
A low power sequential circuit (e.g., latch) uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The sequential circuit includes a 3-input majority gate having first, second, and third inputs, and a first output. The sequential circuit includes a driver coupled to the first output, wherein the driver is to generate a second output…
Who is the assignee on this patent?
Kepler Computing Inc
What technology area does this patent fall under?
Primary CPC classification H03K19/23. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 20 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).