Spin logic with spin hall electrodes and charge interconnects

Patent metadata

Field	Value
Publication number	US-10679782-B2
Application number	US-201515751111-A
Country	US
Kind code	B2
Filing date	Sep 9, 2015
Priority date	Sep 9, 2015
Publication date	Jun 9, 2020
Grant date	Jun 9, 2020

Abstract

Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a first spin current; a first layer configured to convert the first spin current to a second charge current via spin orbit coupling (SOC), wherein at least a part of the first layer is coupled to the input ferromagnet; and a second layer configured to convert the second charge current to a second spin current via spin orbit coupling (SOC).

First claim

We claim:

1. An apparatus comprising:
a first magnet;
an interconnect comprising a non-magnetic material;
a first layer comprising metal, the first layer coupled to the first magnet;
a second layer comprising metal, the second layer coupled to the first layer and to a first end of the interconnect;
a third layer comprising a spin orbit (SOC) material, wherein the third layer is coupled to a second end of the interconnect; and
a second magnet coupled to the third layer, wherein the first magnet is coupled to a third magnet, and wherein the third magnet comprises an insulative ferromagnetic material.

2. The apparatus of claim 1 , wherein the third layer includes one or more of: β-Ta, β-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped with an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.

3. The apparatus of claim 1 , wherein the first layer comprises one of: Ag, Cu, or Au.

4. The apparatus of claim 1 , wherein the second layer comprises one or more of: Bi and Ag; Bi and Au; Bi and Cu; Pb and Ag; Pb and Au; β-Ta; β-W, Pt; or Bi 2 Te 3 .

5. The apparatus of claim 1 , wherein the first and second magnets include one of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, or a combination of them.

6. The apparatus of claim 1 , wherein the interconnect comprises Cu.

7. The apparatus of claim 1 , comprises a fourth layer comprising a SOC material, wherein the insulative ferromagnetic material is coupled to the fourth layer, and wherein the fourth layer is coupled to a conductor, and wherein the conductor comprises a non-magnetic material.

8. The apparatus of claim 7 , wherein the fourth layer includes one or more of: β-Ta, β-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped with an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.

9. The apparatus of claim 7 , wherein the conductor is coupled to at least three other conductors such that the apparatus is operable to perform majority gate function, and wherein the at least three other conductors comprise non-magnetic material.

10. The apparatus of claim 1 , wherein the insulative ferromagnetic material includes one of: Y, Fe, O, Gd, Ga, Tb, Pb, or Ba.

11. An apparatus comprising:
a first magnet;
a first layer comprising spin orbit (SOC) material, wherein the first layer is coupled at one end of the first magnet;
a first interconnect coupled to the first layer, wherein the first interconnect comprises a non-magnetic material;
a second layer comprising an inverse SOC material, wherein the second layer is coupled to another end of the first magnet;
a second interconnect comprising a non-magnetic material, wherein the second interconnect is coupled to the second layer;
a third layer coupled to the second interconnect, wherein the third layer comprises SOC material;
a second magnet having one end coupled to the third layer;
a fourth layer comprising an inverse SOC material, wherein the fourth layer is coupled to another end of the second magnet; and
a third interconnect coupled to the second magnet, wherein the third interconnect comprises a non-magnetic material.

12. The apparatus of claim 11 , wherein the second layer includes:
a fifth layer coupled to the first magnet, wherein the fifth layer comprises a template metal; and
a sixth layer comprising metal, wherein the sixth layer is coupled to the fifth layer and to a first end of the second interconnect.

13. The apparatus of claim 12 , wherein the fifth layer includes one of: Ag, Cu, or Au.

14. The apparatus of claim 12 , wherein the sixth layer includes at least one of: Bi and Ag; Bi and Au; Bi and Cu; Pb and Ag; Pb and Au; β-Ta; β-W, Pt; or Bi 2 Te 3 .

15. The apparatus of claim 11 , wherein the first and third layers includes one or more of: β-Ta, β-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped with an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.

16. The apparatus of claim 11 , wherein the first, second, and third interconnects includes Cu, and wherein the first and second magnets includes one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, or a combination of them.

17. A system comprising:
a memory;
a processor coupled to the memory, the processor having an apparatus which comprises:
a magnet having a first end and a second end opposite to the first end;
a first structure comprising spin orbit material, wherein the first structure is adjacent to a first end of the magnet;
a first layer comprising non-magnetic metal, the first layer coupled to the first structure;
a second structure comprising inverse spin orbit material, wherein the second structure is adjacent to a second end of the magnet;
a second layer comprising non-magnetic metal, the second layer coupled to the second structure; and

a wireless interface to allow the processor to communicate with another device.

18. The system of claim 17 , wherein the spin orbit material includes one or more of: β-Ta, β-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped with an element of 3d, 4d, 5d, 4f, or 5f of periodic table group, and wherein the first layer includes one of: Ag, Cu, or Au.

Assignees

• Intel Corp

Inventors

• Manipatruni Sasikanth
• Nikonov Dmitri E
• Chaudhry Anurag
• Young Ian A

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01L43/00

  Electricity · mapped topic

• H01F41/32

  for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film} · CPC title

• H03K19/23

  Majority or minority circuits, i.e. giving output having the state of the majority or the minority of the inputs · CPC title