Plating method and plating apparatus

Patent metadata

Field	Value
Publication number	US-11447885-B2
Application number	US-202017095138-A
Country	US
Kind code	B2
Filing date	Nov 11, 2020
Priority date	Mar 31, 2017
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

A plating method for plating a substrate having resist opening portions is provided. The plating method includes a resist residue removing step of removing resist residues in the resist opening portions of the substrate by spraying first process liquid to a surface of the substrate on which the resist opening portions are formed, a liquid filling step of soaking the substrate passed through the removing step in second process liquid to fill the resist opening portions of the substrate with the second process liquid, and a plating step of plating the substrate passed through the liquid filling step.

First claim

What is claimed is:

1. A plating apparatus for plating a substrate having resist opening portions including:
a resist residue removing apparatus for removing resist residues in resist opening portions of the substrate, comprising a spray unit having nozzles for spraying a first process liquid to a surface of the substrate on which the resist opening portions are formed;
a liquid filling apparatus for soaking the substrate in a second process liquid to fill the resist opening portions of the substrate with the second process liquid;
a plating bath for plating the substrate;
a controller configured to control the resist residue removing apparatus; and

a moving mechanism for moving at least either one of the spray unit and the substrate so that the spray unit moves relatively along the surface of the substrate,
wherein the spray unit includes a first nozzle group and a second nozzle group that are spaced from each other in upper and lower positions in a vertical direction, and the first nozzle group and the second nozzle group contain a plurality of nozzles arranged in a horizontal direction, and
the controller is configured to control the spray unit so that spraying from the first nozzle group and spraying from the second nozzle group are performed on the substrate arranged in the vertical direction at different timings.

2. The plating apparatus according to claim 1 , wherein the first nozzle group includes a first nozzle array arranged in a horizontal direction, the second nozzle group includes a second nozzle array arranged in the horizontal direction, and the first nozzle array and the second nozzle array are arranged to be adjacent to each other in upper and lower positions.

3. The plating apparatus according to claim 2 , wherein the plurality of nozzles constituting the first nozzle group and the second nozzle group have slot-shaped nozzle ports, and at least one nozzle port of the plurality of nozzles is oriented so as not to interfere with sprayings from other nozzles adjacent in a horizontal direction.

4. The plating apparatus according to claim 1 , wherein the spray unit is configured so that the first process liquid is sprayed to the substrate from a leading nozzle group in a travel direction of the spray unit, the leading nozzle group being one of the first nozzle group and the second nozzle group.

5. The plating apparatus according to claim 4 , wherein the first nozzle group is located above the second nozzle group in a vertical direction, nozzles constituting the first nozzle group are provided to the spray unit so that nozzle ports of the nozzles are inclined upwards with respect to a direction perpendicular to a surface of the substrate on which the resist opening portions are formed, and nozzles constituting the second nozzle group are provided to the spray unit so that nozzle ports of the nozzles are inclined downwards with respect to the direction perpendicular to the surface of the substrate on which the resist opening portions are formed.

6. The plating apparatus according to claim 1 , wherein the nozzles are provided to the spray unit so that nozzle ports of the nozzles are inclined with respect to a direction perpendicular to the surface of the substrate on which the resist opening portions are formed.

7. The plating apparatus according to claim 1 , wherein the resist residue removing apparatus has a first processing bath in which the substrate is accommodated in a vertical direction.

8. The plating apparatus according to claim 1 , wherein the liquid filling apparatus includes a stirring device for stirring the second process liquid.

9. The plating apparatus according to claim 1 , wherein the liquid filling apparatus includes a processing bath for accommodating the substrate therein, and a circulation device for circulating the second process liquid in the processing bath.

10. The plating apparatus according to claim 1 , wherein a first process liquid is liquid different from the second process liquid.

11. The plating apparatus according to claim 1 , wherein the first process liquid includes any one of pure water, pure water containing either surfactant or citric acid, sulfuric acid, sulfuric acid containing either surfactant or citric acid, or ionic water containing CO 2 ion, liquid containing a compound from a polyalkylene glycol group, liquid containing a compound from an alkylene glycol group containing an amino group, methanesulfonic acid, and any combination thereof.

12. The plating apparatus according to claim 1 , wherein the second process liquid includes any one of deaerated water, pure water containing either surfactant or citric acid, sulfuric acid, sulfuric acid containing either surfactant or citric acid, or ionic water containing CO 2 ion, liquid containing a compound from a polyalkylene glycol group, liquid containing a compound from an alkylene glycol group containing an amino group, methanesulfonic acid, and any combination thereof.

Assignees

• Ebara Corp

Inventors

• Fujikata Jumpei
• Shimoyama Masashi
• Miyamoto Ryu
• Ishimoto Kentaro

Classifications

• H10P72/0476

  comprising at least one plating chamber · CPC title

• H10W20/043

  for electroplating · CPC title

• C25D7/12 Primary

  Semiconductors · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C23C18/1803

  of metallic material surfaces or of a non-specific material surfaces · CPC title