Measurement apparatus for measuring a wavefront aberration of an imaging optical system

US11441970B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11441970-B2
Application numberUS-201916556918-A
CountryUS
Kind codeB2
Filing dateAug 30, 2019
Priority dateMar 2, 2017
Publication dateSep 13, 2022
Grant dateSep 13, 2022

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Abstract

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A measurement apparatus (10) for measuring a wavefront aberration of an imaging optical system (12) includes (i) a measurement wave generating module (24) which generates a measurement wave (26) radiated onto the optical system and which includes an illumination system (30) illuminating a mask plane (14) with an illumination radiation (32), as well as coherence structures (36) arranged in the mask plane, and (ii) a wavefront measurement module (28) which measures the measurement wave after passing through the optical system and determines from the measurement result, with an evaluation device (46), a deviation of the wavefront of the measurement wave from a desired wavefront. The evaluation device (46) determines an influence of an intensity distribution (70) of the illumination radiation in the region of the mask plane on the measurement result and, when determining the deviation of the wavefront, utilizes the influence of the intensity distribution.

First claim

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What is claimed is: 1. A measurement apparatus for measuring a wavefront aberration of an imaging optical system comprising: a measurement wave generating module configured to generate a measurement wave radiated onto the optical system, wherein the measurement wave generating module comprises: an illumination system configured to illuminate a mask plane with an illumination radiation, and coherence structures arranged in the mask plane, and a wavefront measurement module configured to determine a measurement result after the measurement wave passes through the optical system and, with an evaluation device, to determine, from the measurement result, a deviation of the wavefront of the measurement wave from a desired wavefront, wherein the evaluation device is configured to determine, based on an optical propagation calculation, an extent of an influence of an intensity distribution of the illumination radiation in a region of the mask plane on the measurement result and to determine the deviation of the wavefront of the measurement wave in accordance with the determined extent of the influence of the intensity distribution, and wherein the optical propagation calculation involves at least one of: calculating a propagation of a measurement wave through individual optical elements of the imaging optical system using rays to model the measurement wave, or calculating the propagation of the measurement wave through the individual optical elements of the imaging optical system using diffraction calculations, and wherein the optical propagation calculation is based on characteristics of individual optical elements of the imaging optical system and an arrangement of the optical elements in a beam path of the measurement wave through the imaging optical system. 2. The measurement apparatus as claimed in claim 1 , wherein the measurement wave generating module comprises diffusing structures arranged in the beam path of the illumination radiation. 3. The measurement apparatus as claimed in claim 2 , wherein the diffusing structures are arranged at a first side of a reticle substrate, and wherein a second side of the reticle substrate comprises the coherence structures. 4. The measurement apparatus as claimed in claim 1 , which is configured to measure a field-point-dependent wavefront tilt aberration of the imaging optical system. 5. The measurement apparatus as claimed in claim 1 , which is configured to measure a distortion aberration of the imaging optical system. 6. The measurement apparatus as claimed in claim 1 , wherein the measurement wave generating module comprises a focusing optical unit arranged in the beam path of the illumination radiation. 7. The measurement apparatus as claimed in claim 6 , wherein the measurement wave generating module comprises a diffusing plate having diffusing structures, said diffusing plate being arranged upstream of the focusing optical unit in the beam path of the illumination radiation. 8. A microlithographic projection exposure apparatus, comprising a projection lens for imaging mask structures onto a wafer, and a measurement apparatus as claimed in claim 1 for measuring a wavefront aberration of the projection lens. 9. A method for measuring a wavefront aberration of an imaging optical system, comprising: generating a measurement wave for radiating onto the optical system by illuminating coherence structures arranged in a mask plane with an illumination radiation, ascertaining an intensity distribution of the illumination radiation in a region of the mask plane, and radiating the measurement wave onto the optical system, measuring the measurement wave after the measurement wave passes through the optical system, determining, based on performing an optical propagation calculation, an extent of an influence of the ascertained intensity distribution of the illumination radiation in the region of the mask plane on the measurement result, and determining a deviation of the wavefront of the measurement wave from a desired wavefront based on the measurement result including the determined extent of the influence of the ascertained intensity distribution in the mask plane, wherein the optical propagation calculation involves at least one of: calculating a propagation of a measurement wave through individual optical elements of the imaging optical system using rays to model the measurement wave, or calculating the propagation of the measurement wave through the individual optical elements of the imaging optical system using diffraction calculations, and wherein the optical propagation calculation is based on characteristics of individual optical elements of the imaging optical system and an arrangement of the optical elements in a beam path of the measurement wave through the imaging optical system. 10. The method as claimed in claim 9 , further comprising arranging diffusing structures in the beam path of the illumination radiation. 11. The method as claimed in claim 10 , wherein the diffusing structures are arranged at a first side of a reticle substrate, and wherein a second side of the reticle substrate comprises the coherence structures. 12. The method as claimed in claim 9 , further comprising arranging a focusing optical unit in the beam path of the illumination radiation. 13. The method as claimed in claim 12 , further comprising arranging a diffusing plate comprising diffusing structures upstream of the focusing optical unit in the beam path of the illumination radiation. 14. The method as claimed in claim 10 , further comprising: generating the illumination radiation with an illumination system, wherein said ascertaining of the intensity distribution of the illumination radiation in the region of the mask plane comprises separately measuring an intensity distribution of the illumination radiation generated by the illumination system, and measuring a diffusing distribution of the diffusing structures. 15. The method as claimed in claim 9 , further comprising arranging a focusing optical unit in the beam path of the illumination radiation, wherein the coherence structures are arranged in a mask region of a reticle substrate, and wherein said ascertaining of the intensity distribution of the illumination radiation in the region of the mask plane comprises ascertaining a position deviation of the focusing optical unit from a center of the mask region. 16. The method as claimed in claim 9 , further comprising arranging a reticle having the coherence structures in the mask plane, wherein said ascertaining of the intensity distribution of the illumination radiation is carried out after interaction of the illumination radiation with the reticle. 17. The method as claimed in claim 9 , wherein said ascertaining of the intensity distribution in the region of the mask plane comprises scanning the mask plane with an intensity measurement module comprising a microscope objective. 18. The method as claimed in claim 9 , wherein the imaging optical system comprises a projection lens integrated into a microlithographic projection exposure apparatus, and wherein said ascertaining of the intensity distribution in the region of the mask plane comprises arranging a wavefront sensor in a wafer plane of the projection exposure apparatus. 19. The method as claimed in claim 9 , further comprising: measuring a spatially resolved component and an angularly resolved component of the intensity distribution of the illumination radiation separately to obtain measurement results and, using

Assignees

Inventors

Classifications

  • for optical correction, e.g. distorsion, aberration · CPC title

  • Measurement of illumination distribution, in pupil plane or field plane · CPC title

  • by using interferometric methods · CPC title

  • by using targets or reference patterns · CPC title

  • G03F7/706Primary

    Aberration measurement · CPC title

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What does patent US11441970B2 cover?
A measurement apparatus (10) for measuring a wavefront aberration of an imaging optical system (12) includes (i) a measurement wave generating module (24) which generates a measurement wave (26) radiated onto the optical system and which includes an illumination system (30) illuminating a mask plane (14) with an illumination radiation (32), as well as coherence structures (36) arranged in the m…
Who is the assignee on this patent?
Zeiss Carl Smt Gmbh
What technology area does this patent fall under?
Primary CPC classification G01M11/0271. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 13 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).