Member for plasma processing apparatus, plasma processing apparatus with the same and method for using sintered body

Patent metadata

Field	Value
Publication number	US-11434174-B2
Application number	US-202016830025-A
Country	US
Kind code	B2
Filing date	Mar 25, 2020
Priority date	Apr 4, 2019
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula W x M y C z .

First claim

What is claimed is:

1. A member for a plasma processing apparatus, the member comprising:
a tungsten carbide phase; and
a sub-phase dispersed in the tungsten carbide phase and including at least one selected from the group consisting of a phase I, a phase II, a phase III, and a phase V,
wherein the phase I is a carbide phase containing, as a constituent element, at least one of Ta and Nb,
wherein the phase II is a nitride phase containing, as a constituent element, Ta,
wherein the phase III is a carbonitride phase containing, as a constituent element, at least one of elements of Group IV, Group V, and Group VI of the periodic table excluding W, and
wherein the phase V is a composite carbide phase which is represented by a formula W x M y C z , where M represents an iron group element, C represents carbon, W represents tungsten, and x, y, and z each independently represent a numerical value exceeding 0,

wherein a content ratio of the tungsten carbide phase is 99% by volume or more,
wherein a content ratio of the sub-phase is 1% by volume or less,
wherein the tungsten carbide phase and the sub-phase have a porosity of 2% by volume or less, and
wherein the member is configured with at least one component exposed to a plasma processing in the plasma processing apparatus.

2. The member according to claim 1 , wherein the sub-phase includes the composite carbide phase of the phase V, and the composite carbide phase contains one or both of a W 3 Co 3 C phase and a W 3 Ni 3 C phase.

3. The member according to claim 1 , wherein the sub-phase includes the phase I, and
the includes at least one constituent element selected from the group consisting of Cr, Ta, V, and Nb.

4. The member according to claim 1 , wherein the sub-phase includes the phase I, and
the member is consisting of the tungsten carbide phase and the carbide phase.

5. A member for a plasma processing apparatus, the member consisting of:
a tungsten carbide phase; and
a sub-phase dispersed in the tungsten carbide phase and including a carbon phase,
wherein a content ratio of the tungsten carbide phase is 99% by volume or more,
wherein a content ratio of the carbon phase is from 0.1% to 1% by volume,
wherein the tungsten carbide phase and the sub-phase have a porosity of 2% by volume or less, and
wherein the member is configured with at least one component exposed to a plasma processing in the plasma processing apparatus.

6. The member according to claim 1 , wherein the sub-phase includes the phase V, and
the member is consisting of the tungsten carbide phase and the composite carbide phase.

7. A member for a plasma processing apparatus, the member consisting of:
a tungsten carbide phase; and
a sub-phase dispersed in the tungsten carbide phase and including a phase I and a phase V, and
wherein the phase I is a carbide phase containing, as a constituent element, at least one of elements of Group IV, Group V and Group VI of the periodic table excluding W,
wherein the phase V is a composite carbide phase which is represented by a formula W x M y C z , where M represents an iron group element, C represents carbon, W represents tungsten, and x, y, and z each independently represent a numerical value exceeding 0,
wherein a content ratio of the tungsten carbide phase is 99% by volume or more,
wherein a content ratio of the carbon phase is 1% by volume or less, and
wherein the tungsten carbide phase and the sub-phase have a porosity of 2% by volume or less.

8. The member according to claim 1 , wherein the total content of Fe atoms, Co atoms, and Ni atoms is in a range of 30 to 3,300 atomic ppm.

9. The member according to claim 1 , wherein a content of each of a Fe atom, a Co atom, and a Ni atom is 1650 atomic ppm or less.

10. A plasma processing apparatus comprising:
a sintered body,
wherein the sintered body includes a tungsten carbide phase and a sub-phase dispersed in the tungsten carbide phase, the sub-phase including at least one selected from the group consisting of a phase I, a phase II, a phase III, a phase IV, and a phase V,
wherein the phase I is a carbide phase containing, as a constituent element, at least one of elements of Group IV, Group V, and Group VI of the periodic table excluding W,
wherein the phase III is a carbonitride phase containing, as a constituent element, at least one of elements of Group IV, Group V, and Group VI of the periodic table excluding W,
wherein the phase IV is a carbon phase,
wherein the phase V is a composite carbide phase which is represented by a formula W x M y C z , where M represents an iron group element, C represents carbon, W represents tungsten, and x, y, and z each independently represent a numerical value exceeding 0,
wherein a content ratio of the tungsten carbide phase is 99% by volume or more,
wherein a content ratio of the sub-phase is 1% by volume or less, and
wherein the tungsten carbide phase and the sub-phase have a porosity of 2% by volume or less.

11. A method for using the member of claim 1 as a member of a plasma processing apparatus, comprising: utilizing the member of claim 1 in the plasma processing apparatus.
a content ratio of the sub-phase is 1% by volume or less, and a porosity is 2% by volume or less.

12. The method of claim 11 , wherein the member of the plasma processing apparatus is a sintered body.

13. A method for using the member according to claim 7 as a member of a plasma processing apparatus, comprising: utilizing the member of claim 7 in the plasma processing apparatus.

14. The method of claim 13 , wherein the member of the plasma processing apparatus is a sintered body.

Assignees

• Nippon Tungsten
• Tokyo Electron Ltd

Inventors

• Ikeda Takashi
• Ishii Hajime
• Fujimoto Kenji
• Satoh Naoyuki
• Nagayama Nobuyuki
• Murakami Koichi
• Murakami Takahiro

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P72/72

  using electrostatic chucks · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• C04B2235/72

  Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics · CPC title