High purity tungsten pentachloride and production method thereof

US11427479B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11427479-B2
Application numberUS-201716338020-A
CountryUS
Kind codeB2
Filing dateOct 6, 2017
Priority dateDec 5, 2016
Publication dateAug 30, 2022
Grant dateAug 30, 2022

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Provided are high purity tungsten pentachloride, and a method for obtaining such high purity tungsten pentachloride at a high yield and in an efficient manner. Tungsten pentachloride in which a total content of metal impurities excluding Sb, Ti, and As is less than 10 wtppm is obtained by uniformly mixing one or more types of reducing agents selected from Sb, Ti, and As and tungsten hexachloride at a molar ratio of 1.0:2.0 to 1.0:5.0 (reducing agent/WCl6 ratio) in an inert atmosphere to obtain a mixture, heating and reducing the mixture for 1 to 100 hours in a temperature range in which a chloride of tungsten and the reducing agent becomes a liquid phase to obtain a reduced product, heating the reduced product for 1 to 100 hours at 100 Pa or less and in a temperature range of 90 to 130° C., and performing reduced-pressure distillation thereto to obtain a reduced-pressure distilled product, heating and sublimating the reduced-pressure distilled product for 1 to 100 hours at 100 Pa or less and in a temperature range of 130 to 170° C., and performing sublimation purification of achieving precipitation at 70 to 120° C.

First claim

Opening claim text (preview).

The invention claimed is: 1. Tungsten pentachloride, wherein a total content of metal impurities excluding Sb, Ti, and As is less than 10 wtppm, and wherein a content of is 0.2 wtppm or more and 32000 wtppm or less. 2. The tungsten pentachloride according to claim 1 , wherein a content of Mo is 2 wtppm or less. 3. The tungsten pentachloride according to claim 2 , wherein a content of any one of elements among Sb and As falls within a range of 0.01 wtppm or more and less than 1 wtppm. 4. The tungsten pentachloride according to claim 1 , wherein a content of any one of elements among Sb and As falls within a range of 0.01 wtppm or more and less than 1 wtppm. 5. The tungsten pentachloride according to claim 1 , wherein the total content of Sb, Ti, and As falls within a range of greater than 0.9 wtppm to 200000 wtppm. 6. The tungsten pentachloride according to claim 1 , wherein a total content of tungsten dichloride, tungsten tetrachloride, tungsten hexachloride, and tungsten acid chloride is 5 wt % or less. 7. Tungsten pentachloride, wherein a total content of metal impurities excluding Sb, Ti and As is less than 10 wtppm, and wherein a content of As is 5000 wtppm or more and 20000 wtppm or less.

Assignees

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Classifications

  • C01G41/04Primary

    Halides · CPC title

  • Halides (C01G28/001 takes precedence) · CPC title

  • Titanium tetrachloride · CPC title

  • Compositional purity · CPC title

  • of binary type SbX3 or SbX5 with X representing a halogen, or mixed of the type SbX3X'2 with X,X' representing different halogens · CPC title

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What does patent US11427479B2 cover?
Provided are high purity tungsten pentachloride, and a method for obtaining such high purity tungsten pentachloride at a high yield and in an efficient manner. Tungsten pentachloride in which a total content of metal impurities excluding Sb, Ti, and As is less than 10 wtppm is obtained by uniformly mixing one or more types of reducing agents selected from Sb, Ti, and As and tungsten hexachlorid…
Who is the assignee on this patent?
Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification C01G41/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 30 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).