Method for arranging electronic switching elements, electronic switching arrangement and use of a carrier having a bonding layer
US-2017170141-A1 · Jun 15, 2017 · US
Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic device
US11424201B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11424201-B2 |
| Application number | US-201816012341-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 19, 2018 |
| Priority date | Jun 20, 2017 |
| Publication date | Aug 23, 2022 |
| Grant date | Aug 23, 2022 |
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Abstract
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A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming an aluminum oxide layer, the method comprising: providing a metal surface comprising at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof; and depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°. 2. The method of claim 1 , wherein the processing temperature during the depositing is between 150° and 280° C. 3. The method of claim 2 , wherein a total duration of the processing temperature being between 150° C. and 280° C. is more than 30 minutes. 4. The method of claim 3 , wherein the total duration of the processing temperature comprises an annealing process. 5. The method of claim 1 , wherein the aluminum oxide layer comprises copper at a percentage by mass of at least 5 wt %. 6. The method of claim 1 , wherein the liquid solder is a lead-free solder. 7. The method of claim 1 , wherein the liquid solder comprises tin. 8. The method of claim 1 , wherein the aluminum oxide layer has a thickness of between 1 nm and 12 nm. 9. The method of claim 1 , further comprising: between providing the metal surface and depositing the aluminum oxide layer, removing an oxide layer from the metal surface. 10. The method of claim 9 , wherein the oxide layer is removed using a forming gas. 11. The method of claim 1 , further comprising diffusing metal from the metal surface and into the aluminum oxide layer during or after depositing the aluminum oxide layer. 12. The method of claim 11 , wherein the metal from the metal surface is diffused so as to extend to a top surface of the aluminum oxide layer that is opposite from the metal surface. 13. The method of claim 11 , further comprising annealing the metal surface and the aluminum oxide layer after depositing the aluminum oxide layer, and wherein diffusing atoms from the metal surface and into the aluminum oxide layer comprises controlling a thermal budget of the depositing and the annealing to form spaces in the aluminum oxide layer which into which the atoms from the metal surface.
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Classifications
Soldering or alloying · CPC title
comprising copper [Cu] · CPC title
comprising aluminium [Al] · CPC title
comprising gold [Au] · CPC title
Cleaning, e.g. oxide removal · CPC title
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- What does patent US11424201B2 cover?
- A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing tem…
- Who is the assignee on this patent?
- Infineon Technologies Ag
- What technology area does this patent fall under?
- Primary CPC classification H10W72/90. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 23 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).