Indirect conversion nuclear battery using transparent scintillator material

Patent metadata

Field	Value
Publication number	US-11415713-B2
Application number	US-202017073015-A
Country	US
Kind code	B2
Filing date	Oct 16, 2020
Priority date	Oct 16, 2020
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity.

First claim

What is claimed is:

1. A product, comprising:
a transparent scintillator material;
a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV); and
a photovoltaic portion configured to convert light emitted by the scintillator material to electricity,
wherein the scintillator material is characterized as not exhibiting a significant degradation of light output under continuous exposure to radiation energy at 1 megaelectron volt (MeV) to a dose of at least 1 gigarad for a duration of one year.

2. The product as recited in claim 1 , wherein the scintillator material is in the form of a ceramic.

3. The product as recited in claim 1 , wherein the scintillator material is in the form of a single crystal material.

4. The product as recited in claim 1 , wherein the scintillator material exhibits a light output of greater than about 30,000 photons per megaelectron volt (MeV).

5. The product as recited in claim 1 , wherein at least some of the scintillator material includes an activator.

6. The product as recited in claim 1 , wherein the beta emitter material has an average radiation energy of less than about 1 MeV.

7. The product as recited in claim 1 , wherein at least some of the beta emitter material is intermixed with the scintillator material.

8. The product as recited in claim 7 , wherein the at least some of the beta emitter material is homogeneously intermixed with the scintillator material.

9. The product as recited in claim 1 , wherein a layer of the beta emitter material is in intimate contact with the scintillator material.

10. The product as recited in claim 1 , comprising a reflective layer positioned between the beta emitter material and the scintillator material.

11. The product as recited in claim 1 , wherein a thickness of the photovoltaic portion is in a range of about 1 micron to about 500 microns.

12. The product as recited in claim 1 , wherein the photovoltaic portion includes two layers of photovoltaic material sandwiching the beta emitter material and scintillator material therebetween.

13. The product as recited in claim 12 , wherein the scintillator material is present in two layers between the layers of photovoltaic material and the beta emitter material.

14. The product as recited in claim 13 , wherein a thickness of each layer of scintillator material is sufficient to protect the photovoltaic portion from significant radiation damage.

15. The product as recited in claim 13 , wherein the beta emitter material is intermixed with the scintillator material between the layers of scintillator material.

16. The product as recited in claim 13 , wherein at least one of the layers of scintillator material has a nonplanar surface.

17. The product as recited in claim 13 , wherein the beta emitter material and sections of the scintillator material are present in alternating portions in the space between the layers of scintillator material.

18. The product as recited in claim 12 , comprising transparent shielding layers between the layers of photovoltaic material and the beta emitter material, wherein a thickness of each shielding layer is sufficient to protect the photovoltaic portion from more than negligible radiation damage.

19. A method, comprising:
forming a product, the product comprising:
a transparent scintillator material;
a beta emitter material having an energy of greater than 225 kiloelectron volts (keV); and
a photovoltaic portion configured to convert light emitted by the scintillator material to electricity,
wherein the scintillator material is characterized as not exhibiting a significant degradation of light output under continuous exposure to radiation energy at 1 megaelectron volt (MeV) to a dose of at least 1 gigarad for a duration of one year.

20. The product as recited in claim 1 , wherein the transparent scintillator material is present as a first layer, wherein the beta emitter material is present as a second layer extending along the first layer.

21. A product, comprising:
a transparent scintillator material;
a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV); and
a photovoltaic portion configured to convert light emitted by the scintillator material to electricity,
wherein a thickness of the photovoltaic portion is in a range of about 1 micron to about 500 microns.

Assignees

• L Livermore Nat Security Llc

Inventors

• Jarrell Joshua
• Cherepy Nerine
• Murphy John Winter
• Nikolic Rebecca J
• Swanberg Jr Erik Lars

Classifications

• H10F30/29

  the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation · CPC title

• G21H1/06

  Cells wherein radiation is applied to the junction of different semiconductor materials · CPC title

• G01T1/2023 Primary

  Selection of materials · CPC title

• G21H1/12 Primary

  Cells using conversion of the radiation into light combined with subsequent photoelectric conversion into electric energy · CPC title

• G01T1/2002

  Optical details, e.g. reflecting or diffusing layers · CPC title