Actinide oxide photodiode and nuclear battery

Patent metadata

Field	Value
Publication number	US-9837564-B1
Application number	US-201615274152-A
Country	US
Kind code	B1
Filing date	Sep 23, 2016
Priority date	Jul 13, 2015
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

First claim

The invention claimed is:

1. An apparatus, comprising:
a first actinide oxide layer;
a second actinide oxide layer deposited on the first actinide oxide layer;
a substrate located under the first actinide oxide layer;
a first electrical contact connected to the substrate; and
a second electrical contact connected to the second actinide oxide layer, wherein
the first actinide oxide layer is n-doped or p-doped,
the second actinide oxide layer is p-doped when the first actinide oxide layer is n-doped,
the second actinide oxide layer is n-doped when the first actinide oxide layer is p-doped,
the first actinide oxide layer and the second actinide oxide layer form a p/n junction therebetween,
the first electrical contact is an anode when the first actinide oxide layer is p-doped and the first electrical contact is a cathode when the first actinide oxide layer is n-doped, and
the second electrical contact is an anode when the second actinide oxide layer is p-doped and the second electrical contact is a cathode when the second actinide oxide layer is n-doped.

2. The apparatus of claim 1 , wherein the first actinide layer and the second actinide layer comprise a thin film.

3. The apparatus of claim 1 , wherein the substrate extends horizontally further than the first actinide layer in at least one direction.

4. The apparatus of claim 1 , further comprising:
an anti-reflective coating located on top of the second actinide oxide layer, wherein
the second actinide oxide layer extends horizontally further than the anti-reflective coating in at least one direction.

5. The apparatus of claim 4 , wherein
the first electrical contact is connected to a top of the substrate at a location where the substrate is not covered by the first actinide oxide layer, and
the second electrical contact is connected to a top of the second actinide oxide layer at a location where the second actinide oxide layer is not covered by the anti-reflective coating.

6. The apparatus of claim 1 , wherein an actinide in the first actinide oxide layer, the second actinide oxide layer, or both, comprises actinium (Ac), thorium (Th), protactinium (Pa), neptunium (Np), plutonium (Pu), americium (Am), curium (Cm), berkelium (Bk), californium (CO, einsteinium (Es), fermium (Fm), mendelevium (Md), nobelium (No), or lawrencium (Lr).

7. The apparatus of claim 1 , wherein the first actinide oxide layer, the second actinide oxide layer, or both, comprise at least two of actinium (Ac), thorium (Th), protactinium (Pa), uranium (U), neptunium (Np), plutonium (Pu), americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es), fermium (Fm), mendelevium (Md), nobelium (No), or lawrencium (Lr).

8. An actinide oxide photodiode, comprising:
a first actinide oxide thin film layer; and
a second actinide oxide thin film layer deposited on the first actinide oxide layer, wherein the first actinide oxide thin film layer is n-doped or p-doped,
the second actinide oxide thin film layer is p-doped when the first actinide oxide thin film layer is n-doped,
the second actinide oxide thin film layer is n-doped when the first actinide oxide thin film layer is p-doped,
the first actinide oxide thin film layer and the second actinide oxide thin film layer form a p/n junction therebetween, and
the first actinide thin film layer comprises a recess in a top surface thereof in which the second actinide oxide thin film layer is deposited.

9. The actinide oxide photodiode of claim 8 , further comprising:
a substrate located under the first actinide oxide layer.

10. The actinide oxide photodiode of claim 9 , further comprising:
a first electrical contact connected to the substrate; and
a second electrical contact connected to the second actinide oxide layer, wherein
the first electrical contact is an anode when the first actinide oxide layer is p-doped and the first electrical contact is a cathode when the first actinide oxide layer is n-doped, and
the second electrical contact is an anode when the second actinide oxide layer is p-doped and the second electrical contact is a cathode when the second actinide oxide layer is n-doped.

11. The actinide oxide photodiode of claim 10 , further comprising:
an anti-reflective coating located on top of the second actinide oxide layer.

12. The actinide oxide photodiode of claim 11 , wherein
the first electrical contact is connected to a bottom or side of the substrate, and
the second electrical contact is connected to a top of the second actinide oxide layer underneath the anti-reflective coating.

13. The actinide oxide photodiode of claim 8 , wherein an actinide in the first actinide oxide thin film layer, the second actinide oxide thin film layer, or both, comprises actinium (Ac), thorium (Th), protactinium (Pa), neptunium (Np), plutonium (Pu), americium (Am), curium (Cm), berkelium (Bk), californium (CO, einsteinium (Es), fermium (Fm), mendelevium (Md), nobelium (No), or lawrencium (Lr).

14. The actinide oxide photodiode of claim 8 , wherein the first actinide oxide thin film layer, the second actinide oxide thin film layer, or both, comprise at least two of actinium (Ac), thorium (Th), protactinium (Pa), uranium (U), neptunium (Np), plutonium (Pu), americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es), fermium (Fm), mendelevium (Md), nobelium (No), or lawrencium (Lr).

15. An actinide oxide photodiode, comprising:
a substrate;
a first actinide oxide thin film layer deposited on the substrate;
a second actinide oxide thin film layer deposited on the first actinide oxide layer;
a first electrical contact connected to the substrate; and
a second electrical contact connected to the second actinide oxide thin film layer, wherein the first actinide oxide thin film layer is n-doped or p-doped,
the second actinide oxide thin film layer is p-doped when the first actinide oxide thin film layer is n-doped,
the second actinide oxide thin film layer is n-doped when the first actinide oxide thin film layer is p-doped,
the first actinide oxide thin film layer and the second actinide oxide thin film layer form a p/n junction therebetween,
the first electrical contact is an anode when the first actinide oxide layer is p-doped and the first electrical contact is a cathode when the first actinide oxide layer is n-doped, and
the second electrical contact is an anode when the second actinide oxide layer is p-doped and the second electrical contact is a cathode when the second actinide oxide layer is n-doped.

16. The actinide oxide photodiode of claim 15 , wherein the first actinide thin film layer comprises a recess in a top surface thereof in which the second actinide oxide thin film layer is deposited.

17. The actinide oxide photodiode of claim 15 , wherein the first actinide oxide thin film layer, the second actinide oxide thin film layer, or both, comprise at least two of actinium (Ac), thorium (Th), protactinium (Pa), uranium (U), neptunium (Np), plutonium (Pu), americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es), fermium (Fm), mendelevium (Md), nobelium (No), or lawrencium (Lr).

Assignees

• Los Alamos Nat Security Llc

Inventors

• Sykora Milan
• Usov Igor

Classifications

• H10P14/3441

  Conductivity type · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3234

  being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224) · CPC title

• H01L31/18

  Electricity · mapped topic

• H01L31/103

  Electricity · mapped topic