Magnetic sensor array with one TMR stack having two free layers

Patent metadata

Field	Value
Publication number	US-11415645-B2
Application number	US-201916730746-A
Country	US
Kind code	B2
Filing date	Dec 30, 2019
Priority date	Aug 23, 2019
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.

First claim

What is claimed is:

1. A tunnel magnetoresistive (TMR) sensor device, comprising:
a first TMR sensor, wherein the first TMR sensor has a first free magnetic layer, a spacer layer disposed on the first free magnetic layer, and a second free magnetic layer disposed on the spacer layer, wherein the first free magnetic layer and the second free magnetic layer are magnetically coupled in antiparallel;
a second TMR sensor, wherein the second TMR sensor includes two distinct magnetic layers disposed in contact with one another;
a third TMR sensor; and
a fourth TMR sensor, wherein the first TMR sensor and the third TMR sensor are substantially identical.

2. The TMR sensor device of claim 1 , wherein the second TMR sensor includes a first free magnetic layer and a second free magnetic layer disposed on the first free magnetic layer, wherein the first free magnetic layer and the second free magnetic layer are magnetically coupled in parallel.

3. The TMR sensor device of claim 2 , wherein the second free magnetic layer of the second TMR sensor is thicker than the first free magnetic layer of the second TMR sensor.

4. The TMR sensor device of claim 1 , wherein the fourth TMR sensor and the second TMR sensor are substantially identical.

5. A tunnel magnetoresistive (TMR) sensor device, comprising:
a first TMR sensor, wherein the first TMR sensor has a first free magnetic layer, a spacer layer disposed on the first free magnetic layer, and a second free magnetic layer disposed on the spacer layer, wherein the first free magnetic layer and the second free magnetic layer are magnetically coupled in antiparallel; and
a second TMR sensor, wherein the second TMR sensor includes two distinct magnetic layers disposed in contact with one another,
wherein:
the first TMR sensor has a top layer of magnetic material and a layer in contact with the top layer, and
the second TMR sensor includes a top layer of magnetic material that has a thickness that is substantially equal to a thickness of the top layer of magnetic material of the first TMR sensor and the layer in contact with the top layer of magnetic material of the first TMR sensor.

6. A TMR sensor device, comprising:
a first tunnel magnetoresistive (TMR) sensor, wherein the first TMR sensor includes a first free layer having a first magnetic moment, a spacer layer disposed on the first free layer, and a second free layer disposed on the first free layer, the second free layer having a second magnetic moment antiparallel to the first magnetic moment; and
a second TMR sensor, wherein the second TMR sensor includes a third free layer that is different from both the first free layer and the second free layer, the third free layer of the second TMR sensor comprises a first magnetic layer and a second magnetic layer disposed on the first magnetic layer, wherein the first magnetic layer and the second magnetic layer each has the second magnetic moment.

7. The TMR sensor device of claim 6 , further comprising a third TMR sensor, the second TMR sensor and the first TMR sensor being substantially identical.

8. The TMR sensor device of claim 7 , further comprising a fourth TMR sensor, the fourth TMR sensor and the second TMR sensor being substantially identical.

9. A TMR sensor device, comprising:
a first tunnel magnetoresistive (TMR) sensor, wherein the first TMR sensor includes a free layer; and
a second TMR sensor, wherein the second TMR sensor includes a free layer that is different from the first TMR sensor free layer, wherein the first TMR sensor includes an unbalanced synthetic antiferromagnetic free layer.

10. The TMR sensor device of claim 9 , wherein the free layer of the second TMR sensor is a multi-layer structure.

11. The TMR sensor device of claim 10 , wherein the free layer of the second TMR sensor comprises a first magnetic layer and a second magnetic layer disposed on the first magnetic layer.

12. The TMR sensor device of claim 11 , wherein the first magnetic layer and the second magnetic layer are magnetically coupled in parallel.

13. The TMR sensor device of claim 12 , wherein a bottom layer of the unbalanced synthetic antiferromagnetic free layer of the first TMR sensor is substantially identical to the first magnetic layer of the free layer of the second TMR sensor.

14. A tunnel magnetoresistive (TMR) sensor device, comprising:
a first TMR sensor, wherein the first TMR sensor has a top layer of magnetic material and a layer in contact with the top layer; and
a second TMR sensor, wherein the second TMR sensor comprises:
two distinct magnetic layers disposed in contact with one another, and
a top layer of magnetic material that has a thickness that is substantially equal to a thickness of the top layer of magnetic material of the first TMR sensor and the layer in contact with the top layer of magnetic material of the first TMR sensor.

15. The TMR sensor device of claim 14 , further comprising:
a third TMR sensor; and
a fourth TMR sensor.

16. The TMR sensor device of claim 15 , wherein the first TMR sensor and the third TMR sensor are substantially identical.

17. The TMR sensor device of claim 15 , wherein the fourth TMR sensor and the second TMR sensor are substantially identical.

Assignees

• Western Digital Tech Inc

Inventors

• Zheng Yuankai
• Kaiser Christian
• Diao Zhitao
• Hu Chih-Ching
• Chien Chen-Jung
• Wang Yung-Hung
• Mao Ming
• Jiang Ming

Classifications

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

• G01R33/0023

  Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration (G01R33/0017 takes precedence) · CPC title

• G11B5/3945

  Heads comprising more than one sensitive element · CPC title

• G11B5/3958

  the active elements being arranged in a single plane, e.g. "matrix" disposition · CPC title

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title