XMR angle sensors

Patent metadata

Field	Value
Publication number	US-10712176-B2
Application number	US-201715652646-A
Country	US
Kind code	B2
Filing date	Jul 18, 2017
Priority date	Jun 22, 2011
Publication date	Jul 14, 2020
Grant date	Jul 14, 2020

Abstract

Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.

First claim

What is claimed is:

1. An angle sensor for measuring an external magnetic field with 360 degrees of uniqueness, comprising:
a first anisotropic magnetoresistive (AMR) sensor element comprising a first AMR sensor layer;
a first exchange bias effect biasing stack comprising multiple layers underlying and integrated with the first AMR sensor element;
an insulating layer underlying the exchange bias effect biasing stack;
a second exchange bias effect biasing stack underlying the insulating layer such that a magnetization direction of the second exchange bias effect biasing stack is rotated with respect to a magnetization direction of the first exchange bias effect biasing stack;
a second AMR sensor element comprising a second AMR sensor layer underlying the second exchange bias effect biasing stack such that the second AMR sensor element and the second exchange bias effect biasing stack mirror the first AMR sensor element and the first exchange bias effect biasing stack about the insulating layer; and
one or more contacts connected to the second AMR sensor layer.

2. The angle sensor of claim 1 , wherein the first AMR sensor layer comprises an AMR sensor stack comprising multiple layers.

3. The angle sensor of claim 2 , further comprising one or more contacts overlying the first AMR sensor element.

4. The angle sensor of claim 1 , wherein the first exchange bias effect biasing stack comprises:
an anti-ferromagnetic layer;
a ferromagnetic layer overlying the anti-ferromagnetic layer; and
a non-magnetic coupling layer overlying the ferromagnetic layer,
wherein the non-magnetic coupling layer is disposed between the ferromagnetic layer and the first AMR sensor element.

5. The angle sensor of claim 4 , wherein the anti-ferromagnetic layer comprises a material selected from the group consisting of platinum manganese (PtMn), nickel manganese (NiMn) and iridium manganese (IrMn).

6. The angle sensor of claim 4 , wherein the non-magnetic coupling layer comprises Ru.

7. The angle sensor of claim 1 , wherein the first AMR sensor layer comprises a material selected from the group consisting of cobalt iron (CoFe) and nickel iron (NiFe).

8. The angle sensor of claim 1 , wherein the first AMR sensor layer has a thickness in a range of about 10 nm to about 30 nm.

9. The angle sensor of claim 1 , wherein the first exchange bias effect biasing stack comprises an antiferromagnetic layer, and wherein the first AMR sensor layer is coupled to the antiferromagnetic layer by at least one of a ferromagnetic layer and a non-magnetic coupling layer.

10. The angle sensor of claim 1 , wherein the first AMR sensor element, in operation, is biased via the first exchange bias effect biasing stack with a bias magnetic field for at least a given period of time.

11. The angle sensor of claim 10 , wherein the bias magnetic field is smaller than the external magnetic field.

12. The angle sensor of claim 1 , wherein the second AMR sensor layer comprises an AMR sensor stack comprising multiple layers.

13. The angle sensor of claim 1 , wherein the insulating layer comprises aluminum oxide or magnesium oxide.

14. The angle sensor of claim 1 , wherein a bias direction of the first and second exchange bias effect biasing stacks is different from one another.

15. The angle sensor of claim 1 , wherein the second AMR sensor layer comprises a ferromagnetic material.

Assignees

• Infineon Technologies Ag

Inventors

• Zimmer Juergen
• Pruegl Klemens

Classifications

• G01R33/096 Primary

  anisotropic magnetoresistance sensors · CPC title

• H04L47/72

  using reservation actions during connection setup · CPC title

• G01D5/16 Primary

  by varying resistance · CPC title

• G01R33/02

  Measuring direction or magnitude of magnetic fields or magnetic flux (G01R33/20 takes precedence) · CPC title

• H04L47/805

  QOS or priority aware · CPC title