Method for producing hollow porous quartz glass base material

Patent metadata

Field	Value
Publication number	US-11401192-B2
Application number	US-201716477461-A
Country	US
Kind code	B2
Filing date	Dec 28, 2017
Priority date	Jan 11, 2017
Publication date	Aug 2, 2022
Grant date	Aug 2, 2022

Abstract

One aspect is a method for producing a hollow porous quartz glass base material. Even when the hollow porous quartz glass base material is produced in large weight and high bulk density, the ease of target extraction is maintained and target extraction is performed stably. The method includes preparing a heat resistant substrate, which has an outer surface on which SiO2 particles are deposited, the outer surface having a surface roughness in which the maximum height Rz is less than 9 μm and the arithmetic average roughness Ra is less than 1 μm. The heat resistant substrate is rotated and SiO2 particles are deposited on the outer surface of the heat resistant substrate to form a glass particulate deposit. The heat resistant substrate is extracted from the glass particulate deposit to produce the base material.

First claim

The invention claimed is:

1. A manufacturing method for hollow porous quartz glass preform comprising:
preparing a columnar or cylindrical heat-resistant substrate with surface roughness of the outer surface on which SiO 2 particles are deposited with maximum height of less than 9 μm and arithmetic mean roughness of less than 1 μm;
forming fine glass particle deposits by rotating said heat-resistant substrate and making SiO 2 particles deposit on the outer surface of said heat-resistant substrate; and
manufacturing hollow porous quartz glass preform by removing said heat-resistant substrate from said glass particle deposits.

2. The manufacturing method for porous quartz glass preform of claim 1 , wherein the heat-resistant substrate maximum height is 6.0 μm or lower and arithmetic mean roughness is 0.6 μm or lower.

3. A heat-resistant substrate used in the method of claim 1 , wherein the surface roughness of the exterior surface on which SiO 2 particles are deposited has maximum height below 9 μm and arithmetic mean roughness below 1 μm.

Assignees

• Shin Etsu Quartz Prod Co Ltd
• Heraeus Quarzglas
• Heraeus Deutschland Gmbh & Co Kg

Inventors

• Sumi Kotaro
• Kuwahara Hikari

Classifications

• C03C3/06

  with more than 90% silica by weight, e.g. quartz {(C03C3/045 takes precedence)} · CPC title

• C03B15/14

  Drawing tubes, cylinders, or rods from the melt · CPC title

• C03B19/1492 Primary

  Deposition substrates, e.g. targets · CPC title

• C03B20/00

  Processes specially adapted for the production of quartz or fused silica articles {, not otherwise provided for (C03B19/01, C03B19/066, C03B19/106, C03B19/12, C03B19/14, C03B37/00 take precedence)} · CPC title

• C03B37/01493 Primary

  Deposition substrates, e.g. targets, mandrels, start rods or tubes · CPC title