Plasma etch processes

Patent metadata

Field	Value
Publication number	US-11398386-B2
Application number	US-202016793231-A
Country	US
Kind code	B2
Filing date	Feb 18, 2020
Priority date	Feb 22, 2019
Publication date	Jul 26, 2022
Grant date	Jul 26, 2022

Abstract

In one example, a method of processing a substrate includes receiving a substrate in a processing chamber, the substrate having an etch mask positioned over an underlying layer to be etched, where the underlying layer is a silicon-containing layer. The method includes executing a first etch process that includes forming a first plasma from a first process gas that includes hydrogen bromide or chlorine and etching the underlying layer using products of the first plasma. The method includes executing a second etch process that includes forming a second plasma from a second process gas that includes fluorine and etching the substrate using products from the second plasma. The method may include alternating between the first etch process and the second etch process.

First claim

What is claimed is:

1. A method of processing a substrate, the method comprising:
executing a first etch process to etch exposed portions of an underlying layer by
exposing a substrate disposed in a processing chamber to a first plasma through an etch mask, the substrate having the etch mask positioned over the underlying layer to be etched, the underlying layer being a silicon-containing layer, the first plasma being formed from a first process gas that includes hydrogen bromide or chlorine, and
etching the exposed portions of the underlying layer using products of the first plasma;

executing a second etch process to further etch further exposed portions of the underlying layer by
exposing the substrate to a second plasma through the etch mask, the second plasma being formed from a second process gas that includes fluorine, the second process gas being different from the first process gas, and
etching the further exposed portions of the underlying layer using products of the second plasma; and

further etching exposed portions of the underlying layer by alternating between the first etch process and the second etch process.

2. The method of claim 1 , wherein the etch mask is a dielectric mask.

3. The method of claim 1 , wherein the etch mask is selected from the group consisting of silicon nitride, silicon oxide, silicon-containing anti-reflective coating, and organic material.

4. The method of claim 1 , wherein the underlying layer is silicon or silicon-germanium.

5. The method of claim 1 , wherein the first process gas includes CF 4 , C 4 F 8 , C 4 F 6 , CH 3 F, CHF 3 , or CH 2 F 2 .

6. The method of claim 1 , wherein the second process gas is selected from the group consisting of CF 4 , C 4 F 8 , C 4 F 6 , CH 3 F, CHF 3 , CH 2 F 2 , NF 3 , and SF 6 .

7. The method of claim 1 , wherein alternating between the first etch process and the second etch process continues until a predetermined amount of the underlying layer has been etched.

8. The method of claim 1 , wherein the second plasma is formed from the second process gas that includes fluorine and bromine or chlorine.

9. The method of claim 1 , further comprising generating the first plasma from the first process gas and oxygen.

10. A method of processing a substrate, the method comprising:
receiving a substrate in a processing chamber, the substrate comprising a patterned layer disposed over a layer to be patterned, the layer to be patterned comprising silicon;
forming recesses in the layer to be patterned to a first depth with a first plasma etch process using a first process gas comprising a first halogen element; and
extending the recesses in the layer to be patterned to a second depth with a second plasma etch process using a second process gas comprising a second halogen element, the second halogen element being more electronegative than the first halogen element, the first plasma etch process being more selective than the second plasma etch process;
after performing the second plasma etch process, extending the recesses to a third depth with another first plasma etch process using the first process gas comprising the first halogen element; and
after performing the another first plasma etch process, extending the recesses to a fourth depth by using another second plasma etch process using the second process gas comprising the second halogen element.

11. The method of claim 10 , wherein the first halogen element comprises bromine or chlorine, and wherein the second halogen element comprises fluorine.

12. The method of claim 10 , wherein the second plasma etch process also etches solid byproducts from the first plasma etch process.

13. A method of processing a substrate, the method comprising:
receiving a substrate in a processing chamber, the substrate comprising a patterned layer disposed over a layer to be patterned, the layer to be patterned comprising silicon;
using the patterned layer as an etch mask, performing a first etch process on the substrate in the processing chamber, wherein the first etch process forms, with a first plasma, recesses in the layer to be patterned and forms byproducts covering top surfaces of the patterned layer; and
performing a second etch process on the substrate in the processing chamber, wherein the second etch process extends, with a second plasma, the recesses into the layer to be patterned and etches a portion of the byproducts, the first etch process being more selective than the second etch process.

14. The method of claim 13 , wherein the byproducts comprise silicon, oxygen, and a halogen.

15. The method of claim 13 , wherein the first etch process comprises a first process gas to form the first plasma, the first process gas comprising hydrogen bromide or chlorine, and wherein the second etch process comprises a second process gas to form the second plasma, the second process gas comprising fluorine.

16. The method of claim 13 , wherein the first etch process comprises a first process gas to form the first plasma, the first process gas comprising fluorine, and wherein the second etch process comprises a second process gas to form the second plasma, the second process gas comprising fluorine, wherein an amount of fluorine in the first process gas is less than an amount of fluorine in the second process gas.

17. The method of claim 13 , further comprising:
after performing the second etch process, performing another first etch process on the substrate in the processing chamber, wherein the another first etch process extends the recesses in the layer to be patterned and forms additional byproducts covering top surfaces of the patterned layer; and
after performing the another first etch process, performing another second etch process on the substrate in the processing chamber, wherein the another second etch process extends the recesses further into the layer to be patterned and etches a portion of the additional byproducts.

18. The method of claim 13 , wherein the first etch process comprises a first process gas comprising hydrogen bromide or chlorine, and wherein the second etch process comprises hydrogen bromide or chlorine and a second process gas comprising fluorine.

19. The method of claim 18 , further comprising:
generating the first plasma for the first etch process from the first process gas and oxygen; and
generating the second plasma for the second etch process from hydrogen bromide or chlorine and the second process gas.

20. The method of claim 13 , further comprising leaving a remaining portion of the byproducts covering the top surfaces of the patterned layer after the second etch process.

Assignees

• Tokyo Electron Ltd

Inventors

• Yoshida Yusuke
• Voronin Sergey
• Sridhar Shyam
• Philippi Caitlin
• Talone Christopher
• Ranjan Alok

Classifications

• H10P72/0418

  for etching · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/268

  of silicon-containing layers · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title