Substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11396700-B2
Application number	US-202117144927-A
Country	US
Kind code	B2
Filing date	Jan 8, 2021
Priority date	Aug 3, 2018
Publication date	Jul 26, 2022
Grant date	Jul 26, 2022

Abstract

According to the technique of the disclosure, there is provided a substrate processing apparatus including: a substrate retainer; a heat insulating assembly; a process chamber; a gas supplier including openings bored toward the wafer; a gas discharger including main exhaust openings bored toward the wafer; an exhaust port; an intermediate exhaust opening provided on a side wall of the process chamber at a position facing the heat insulating assembly; and a supply chamber exhaust port provided on the side wall of the process chamber at a height corresponding to the intermediate exhaust opening. The heat insulating assembly includes a constriction at a position corresponding to the intermediate exhaust opening, wherein its outer diameter is smaller than that of a portion of the heat insulating assembly above the position and that of another portion of the heat insulating assembly below the position.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a substrate retainer configured to support a plurality of wafers arranged at a predetermined interval along a predetermined axis;
a heat insulating assembly provided below the substrate retainer;
a process chamber formed in a tubular shape and configured to accommodate the substrate retainer and the heat insulating assembly;
a gas supplier configured to fluidically communicate with the process chamber through one or more openings bored toward an edge of each of the plurality of wafers in the process chamber;
a gas discharger configured to fluidically communicate with the process chamber through one or more main exhaust openings bored toward the edge of each of the wafers;
an exhaust port configured to communicate with the gas discharger and to discharge an inner atmosphere of the process chamber;
an intermediate exhaust opening provided on a side wall of the process chamber and configured to communicate with the process chamber and the exhaust port at a position facing the heat insulating assembly; and
a supply chamber exhaust port provided on the side wall of the process chamber and configured to communicate with the process chamber and the gas supplier at a height corresponding to the intermediate exhaust opening,
wherein the heat insulating assembly is provided with a constriction at a position corresponding to the intermediate exhaust opening, and an outer diameter of the constriction is smaller than that of a portion of the heat insulating assembly above the position corresponding to the intermediate exhaust opening and that of another portion of the heat insulating assembly below the position corresponding to the intermediate exhaust opening,
wherein the gas supplier comprises a plurality of supply chambers provided outside of a side surface of the process chamber, extending in parallel with the predetermined axis and configured to fluidically communicate with the process chamber through a plurality of supply openings bored on the side surface of the process chamber in a manner respectively corresponding to each of the wafers,
the gas discharger comprises an exhaust chamber provided outside of the side surface of the process chamber at a position opposite to the plurality of supply chambers and configured to fluidically communicate with the process chamber through the one or more main exhaust openings bored on the side surface of the process chamber,
the exhaust port is further configured to communicate with the exhaust chamber and to exhaust an inner atmosphere of the exhaust chamber,
the intermediate exhaust opening is further configured to communicate with the process chamber and the exhaust chamber, and
the supply chamber exhaust port is further configured to communicate with the process chamber and the plurality of supply chambers.

2. The substrate processing apparatus of claim 1 , further comprising:
a plurality of injectors of a tubular shape installed by being inserted through openings at bottoms of the plurality of supply chambers and configured to supply a gas to the plurality of the wafers; and
a plurality of supply pipes through which each of the injectors communicates with a gas supply source corresponding thereto and provided outside the process chamber.

3. The substrate processing apparatus of claim 2 , further comprising:
a purge gas supplier configured to supply a purge gas to a lower portion of the heat insulating assembly;
a flange formed as a single body on outer peripheries of lower ends of the process chamber, the plurality of the supply chambers and the exhaust chamber;
a manifold of a cylindrical shape configured to support the flange and provided with an opening at a lower end thereof through which the substrate retainer is loaded or unloaded;
a lid configured to open or close the opening at the lower end of the manifold; and
a heater configured to heat the plurality of the wafers from outside the process chamber,
wherein the heat insulating assembly comprises a cylinder whose diameter is greater than a diameter of each of the wafers and smaller than an inner diameter of the process chamber.

4. The substrate processing apparatus of claim 1 , wherein a purge gas supplied to a lower portion of the heat insulating assembly is discharged to the exhaust port along: a first path that the purge gas flows from openings at bottoms of the plurality of the supply chambers to the exhaust chamber sequentially via the plurality of the supply chambers, the plurality of the supply openings, a vicinity of the plurality of the wafers and the one or more main exhaust openings; a second path that the purge gas flows from a periphery of the heat insulating assembly to the exhaust chamber; or a third path that the purge gas flows from the openings at the bottoms of the plurality of the supply chambers to the exhaust chamber sequentially via the plurality of the supply chambers, the supply chamber exhaust port, a periphery of the constriction and the intermediate exhaust opening, and
a conductance of the first path is greater than a conductance of the second path, and the conductance of the first path is smaller than a conductance of the third path.

5. The substrate processing apparatus of claim 2 , wherein a purge gas supplied to a lower portion of the heat insulating assembly is discharged to the exhaust port along: a first path that the purge gas flows from openings at the bottoms of the plurality of the supply chambers to the exhaust chamber sequentially via the plurality of the supply chambers, the plurality of the supply openings, a vicinity of the plurality of the wafers and the one or more main exhaust openings; a second path that the purge gas flows from a periphery of the heat insulating assembly to the exhaust chamber; or a third path that the purge gas flows from the openings at the bottoms of the plurality of the supply chambers to the exhaust chamber sequentially via the plurality of the supply chambers, the supply chamber exhaust port, a periphery of the constriction and the intermediate exhaust opening, and
a conductance of the first path is greater than a conductance of the second path, and the conductance of the first path is smaller than a conductance of the third path.

6. The substrate processing apparatus of claim 3 , wherein the purge gas supplied to the lower portion of the heat insulating assembly is discharged to the exhaust port along: a first path that the purge gas flows from openings at the bottoms of the plurality of the supply chambers to the exhaust chamber sequentially via the plurality of the supply chambers, the plurality of the supply openings, a vicinity of the plurality of the wafers and the one or more main exhaust openings; a second path that the purge gas flows from a periphery of the heat insulating assembly to the exhaust chamber; or a third path that the purge gas flows from the openings at the bottoms of the plurality of the supply chambers to the exhaust chamber sequentially via the plurality of the supply chambers, the supply chamber exhaust port, a periphery of the constriction and the intermediate exhaust opening, and
a conductance of the first path is greater than a conductance of the second path, and the conductance of the first path is smaller than a conductance of the third path.

7. The substrate processing apparatus of claim 1 , wherein the supply chamber exhaust port, a center of each of the wafers, the intermediate exhaust opening and the exhaust port are arranged in a straight line.

8. The substrate processing apparatus of claim 1 , wherein the intermediate exhaust opening is located on an extension line of a pipe shaft of the exhaust port.

9. The substrate processing apparatus of cla

Assignees

• Kokusai Electric Corp

Inventors

• Hisakado Sadao
• Taniyama Tomoshi

Classifications

• C23C16/45563

  Gas nozzles · CPC title

• C23C16/4412 Primary

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/4587

  the substrate being supported substantially vertically · CPC title

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title