Near infrared optical interference filters with improved transmission

Patent metadata

Field	Value
Publication number	US-11372144-B2
Application number	US-201916357698-A
Country	US
Kind code	B2
Filing date	Mar 19, 2019
Priority date	Feb 18, 2015
Publication date	Jun 28, 2022
Grant date	Jun 28, 2022

Abstract

An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO2, SiOx, SiOxNy, a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO2 as the low index layers.

First claim

The invention claimed is:

1. An interference filter comprising:
a layers stack comprising a plurality of layers of at least:
layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N), the a-Si:H,N layers having a refractive index in the range 3.3 to 3.5 inclusive, wherein the a-Si:H,N has an atomic concentration of hydrogen between 1% and 4% and an atomic concentration of nitrogen between 2% and 6%; and
layers of one or more dielectric materials having a refractive index lower than the refractive index of the a-Si:H,N, wherein the layers of one or more dielectric materials include layers of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive;
wherein the layers stack includes repeating units of two or more layers.

2. The interference filter of claim 1 wherein the one or more dielectric materials include SiO 2 .

3. The interference filter of claim 1 wherein the one or more dielectric materials include a silicon suboxide (SiO x ).

4. The interference filter of claim 1 wherein the one or more dielectric layers include a silicon oxynitride (SiO x N y ).

5. The interference filter of claim 1 wherein the layers of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive include one or more layers comprising Si 3 N 4 , SiO x N y with y large enough to provide a refractive index of 1.9 or higher, Ta 2 O 5 , Nb 2 O 5 , or TiO 2 .

6. The interference filter of claim 5 wherein the layers of one or more dielectric materials further include SiO 2 layers, wherein the layers stack includes at least one SiO 2 layer immediately adjacent a layer of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive with no intervening layer of amorphous hydrogenated silicon.

7. The interference filter of claim 1 wherein the layers stack is configured to have a passband center wavelength in the range 800-1100 nm inclusive.

8. The interference filter of claim 1 wherein the layers stack is configured to have a passband center wavelength in the range 750-1100 nm inclusive.

9. The interference filter of claim 1 further comprising: a transparent substrate supporting the layers stack.

10. The interference filter of claim 9 wherein the transparent substrate comprises a glass substrate.

11. The interference filter of claim 9 wherein the layers stack includes a first layers stack on one side of the transparent substrate and a second layers stack on the opposite side of the transparent substrate.

12. The interference filter of claim 11 wherein the first layers defines a low pass filter with a low pass cutoff wavelength, the second layers stack defines a high pass filter with a high pass cutoff wavelength, and the interference filter has a passband defined between the high pass cutoff wavelength and the low pass cutoff wavelength.

13. An interference filter comprising:
a layers stack comprising alternating a-Si:H,N and silicon based dielectric layers;
wherein the a-Si:H,N layers have a refractive index in the range 3.3 to 3.5 inclusive, the a-Si:H,N layers have an atomic concentration of hydrogen between 4% and 8% and an atomic concentration of nitrogen between 2% and 12%;
wherein the silicon based dielectric layers have a refractive index lower than the refractive index of the a-Si:H,N;
wherein the interference filter is configured to have a passband wavelength range of 750-1100 nm inclusive.

14. The interference filter of claim 13 configured to have a passband wavelength range of 800-1100 nm inclusive.

15. The interference filter of claim 13 wherein the passband center wavelength is 850 nm.

16. The interference filter of claim 13 wherein the silicon based dielectric layers comprise silicon oxide (SiO x ) layers.

17. The interference filter of claim 16 wherein the silicon oxide (SiO x ) layers comprise stoichiometric SiO 2 layers.

18. The interference filter of claim 13 wherein the silicon based dielectric layers comprise silicon oxynitride (SiO x N y ) layers.

19. The interference filter of claim 13 further comprising:
a transparent substrate supporting the layers stack.

20. The interference filter of claim 19 wherein the transparent substrate comprises a glass substrate.

21. An interference filter comprising:
a layers stack comprising a plurality of layers of at least:
layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N), the a-Si:H,N layers having a refractive index in the range 3.3 to 3.5 inclusive, wherein the a-Si:H,N has an atomic concentration of hydrogen between 2% and 8% and an atomic concentration of nitrogen between 3% and 7%; and
layers of one or more dielectric materials having a refractive index lower than the refractive index of the amorphous hydrogenated silicon including layers of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive;

wherein the layers of one or more dielectric materials further include SiO 2 layers, and
wherein the layers stack includes at least one SiO 2 layer immediately adjacent a layer of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive with no intervening layer of a-Si:H,N.

22. The interference filter of claim 21 wherein the layers of a dielectric material having a refractive index in the range 1.9 to 2.7 inclusive include one or more layers comprising Si 3 N 4 , SiO x N y with y large enough to provide a refractive index of 1.9 or higher, Ta 2 O 5 , Nb 2 O 5 , or TiO 2 .

23. The interference filter of claim 21 wherein the interference filter is configured to have a passband wavelength range of 750-1100 nm inclusive.

24. The interference filter of claim 21 further comprising: a transparent substrate supporting the layers stack.

25. The interference filter of claim 24 wherein the layers stack includes a first layers stack on one side of the transparent substrate and a second layers stack on the opposite side of the transparent substrate.

26. The interference filter of claim 25 wherein the first layers defines a low pass filter with a low pass cutoff wavelength, the second layers stack defines a high pass filter with a high pass cutoff wavelength, and the interference filter has a passband defined between the high pass cutoff wavelength and the low pass cutoff wavelength.

Assignees

• Materion Corp

Inventors

• Sprague Robert
• Bai Shengyuan

Classifications

• C23C14/3457

  using other particles than noble gas ions (C23C14/0036, C23C14/46 take precedence) · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/14

  Metallic material, boron or silicon · CPC title

• C23C14/06

  characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) · CPC title

• C23C14/0652

  Silicon nitride · CPC title