Method and apparatus for performing an aerial image simulation of a photolithographic mask

Patent metadata

Field	Value
Publication number	US-11366382-B2
Application number	US-202016798696-A
Country	US
Kind code	B2
Filing date	Feb 24, 2020
Priority date	Feb 24, 2020
Publication date	Jun 21, 2022
Grant date	Jun 21, 2022

Abstract

The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

First claim

What is claimed is:

1. A computer-implemented method for performing an aerial image simulation of a photolithographic mask, the method comprising the following steps:
a. changing at least one parameter of the aerial image simulation, wherein the at least one parameter comprises at least one of: a first arrangement of pixels, a mask pattern, an illumination setting, a numerical aperture, a mask type, or a feature type of the photolithographic mask;
b. modifying, in a simulation process using one or more computers, an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and
c. performing, using the one or more computers, the aerial image simulation of the photolithographic mask as part of a calibration process of a photomask defect correction process by using the generated modified optical radiation distribution to qualify an effect of the at least one first arrangement of pixels on an illumination of a wafer by using the photolithographic mask wherein step b. comprises determining a collective modifying effect of the at least one first arrangement of pixels for each point at the patterned surface, the determining comprising a combination of modifying effects of a plurality of pixels of the at least one first arrangement of pixels which contributes optical radiation to this point; and
wherein the collective modifying effect of the plurality of pixels of the at least one first arrangement of pixels at a point at the patterned surface of the photolithographic mask changes an angular distribution of the optical radiation distribution received at this point.

2. The method of claim 1 , wherein the plurality of pixels of the at least one first arrangement of pixels essentially comprises all pixels which contribute optical radiation to the point at the patterned surface.

3. The method of claim 1 , wherein modifying the optical radiation distribution at the patterned surface comprises modifying an optical radiation distribution without the at least one first arrangement of pixels with the determined collective modifying effect for each point of the patterned surface.

4. The method of claim 1 , wherein step b. is based on at least one of: a look-up table, a metrology system measuring an effect of at least one second arrangement of pixels generated in a mask substrate, or a simulation model simulating the effect of individual pixels.

5. The method of claim 4 , wherein measuring the effect of the at least one second arrangement of pixels within the mask substrate comprises illuminating the second pixel arrangement at a wavelength different than the actinic wavelength and correcting the effect of the wavelength difference, in particular correcting wavelength dependent scattering angles.

6. The method of claim 1 , wherein step a. further comprises determining mask pattern data from a design pattern, a measured pattern, or both.

7. The method of claim 1 , further comprising prior to step b. measuring the optical radiation distribution at the patterned surface of the photolithographic mask, or calculating the optical radiation distribution at the patterned surface from a radiation source, optical elements, a numerical aperture (NA), and an illumination setting of an illumination system.

8. The method of claim 1 , wherein step b. further comprises normalizing the modified optical radiation distribution.

9. The method of claim 1 , further comprising the step of applying a photoresist model for simulating an effect of the illumination of the photoresist arranged on a wafer.

10. The method of claim 9 , further comprising the step of determining a critical dimension correction ratio and/or an image placement correction of the wafer.

11. The method of claim 10 , further comprising the step of comparing the determined critical dimension correction ratio and/or the image placement correction with measurements performed with a metrology tool.

12. The method of claim 11 , further comprising the step of performing the aerial image simulation and a photoresist simulation with the changed modified optical radiation distribution.

13. The method of claim 1 , wherein step c. further comprises considering a coherence of the optical radiation distribution when performing the aerial image simulation of the photolithographic mask.

14. The method of claim 13 , wherein step b. further comprises retrieving a phase of the optical radiation distribution.

15. The method of claim 1 , further comprising one or more of the steps of:
d. measuring a photolithographic mask without having an arrangement of pixels with an aerial image metrology tool;
e. generating at least two different arrangements of pixels in the photolithographic mask;
f. measuring the at least two different arrangements of pixels with the aerial image metrology tool; and
g. determining a calibration relation of the aerial image simulation based on the measurement data of the aerial image metrology tool obtained in steps d. and f.

16. The method of claim 15 , further comprising one or more of the steps of: changing at least one of the parameters; performing the aerial image simulation; and determining the effect of the changed at least one parameter on the illumination of the wafer based on the calibration relation in a closed loop simulation.

17. The method of claim 15 , further comprising the step of comparing the determined critical dimension correction ratio and/or the image placement correction for a photolithographic mask having the pixel arrangements of steps d. and e. with measured aerial images and/or simulated aerial images in order to determine a second calibration relation.

18. A computer-readable medium storing a computer program comprising instructions for performing the method of claim 1 .

19. A simulation unit, the simulation unit being adapted to perform the method of claim 1 .

20. A method comprising:
performing, using one or more computers, an aerial image simulation of a photolithographic mask, comprising:
changing at least one parameter of the aerial image simulation, wherein the at least one parameter comprises at least one of: a first arrangement of pixels, a mask pattern, an illumination setting, a numerical aperture, a mask type, or a feature type of the photolithographic mask;
modifying, in a simulation process, an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and
performing the aerial image simulation of the photolithographic mask as part of a calibration process of a photomask defect correction process by using the generated modified optical radiation distribution to qualify an effect of the at least one first arrangement of pixels on an illumination of a wafer by using the photolithographic mask; and

generating the at least one first arrangement of pixels in the photolithographic mask wherein modifying the optical radiation distribution comprises determining a collective modifying effect of the at least one first arrangement of pixels for each point at the patterned surface, the determining comprising a combination of modifying effects of a plurality of pixels of the at least one first arrangement of pixels which contributes optical radiation to this point; and
wherein the collective modifying effect of the plurality of pixels of the at least one first arrangement of pixels at a point at the patter

Assignees

• Zeiss Carl Smt Gmbh
• Zeiss Carl Sms Ltd

Inventors

• Dmitriev Vladimir
• Welte Joachim
• Geh Bernd
• Graeupner Paul
• Schauer Anja

Classifications

• G03F7/70666 Primary

  Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system · CPC title

• G03F1/84

  Inspecting · CPC title

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G03F1/72

  Repair or correction of mask defects · CPC title

• G03F1/68

  Preparation processes not covered by groups G03F1/20 - G03F1/50 · CPC title