Methods for forming impurity free metal alloy films

Patent metadata

Field	Value
Publication number	US-11359282-B2
Application number	US-202016991430-A
Country	US
Kind code	B2
Filing date	Aug 12, 2020
Priority date	Aug 12, 2020
Publication date	Jun 14, 2022
Grant date	Jun 14, 2022

Abstract

Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).

First claim

What is claimed is:

1. A method of depositing a film, the method comprising:
exposing at least a portion of a substrate surface to a first halide precursor comprising a compound having the general formula (I)
MQ z R m   (I),

wherein M is a metal comprising titanium (Ti), Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, cyclopentadienyl, amidinate, diazadiene, or amidate, and m is from 0 to 6;
exposing at least a portion of the substrate surface to an organosilane reactant comprising a compound of general formula (III)

wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R a , R b , R c , R d , R e , and R f are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C);
exposing at least a portion of the substrate surface to a second halide precursor comprising aluminum chloride (AlCl 3 ); and
exposing at least a portion of the substrate surface to the organosilane reactant comprising the compound of general formula (III),
to deposit a titanium aluminum (TiAl) film on the substrate surface, the titanium aluminum (TiAl) film substantially free of carbon.

2. The method of claim 1 , wherein Q is Cl or Br.

3. The method of claim 1 , wherein Q is Cl.

4. The method of claim 1 , wherein at least one of R a , R b , R c , R d , R e , and R f comprises methyl.

5. The method of claim 1 , wherein exposing the substrate surface to the first halide precursor and the organosilane reactant occurs sequentially.

6. The method of claim 1 , wherein exposing the substrate surface to the first halide precursor and the organosilane reactant occurs simultaneously.

7. The method of claim 1 , wherein the substrate is in a processing chamber.

8. The method of claim 7 , further comprising purging the processing chamber of each of the first halide precursor and the second halide precursor prior to exposing the substrate to the organosilane reactant.

9. The method of claim 8 , further comprising purging the processing chamber of the organosilane reactant.

10. The method of claim 1 , wherein m is from 1 to 6.

Assignees

• Applied Materials Inc

Inventors

• Bajaj Geetika
• Thakare Darshan
• Goradia Prerna
• Visser Robert Jan
• Yang Yixiong
• Wrench Jacqueline S
• Gandikota Srinivas

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H10D64/669

  the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN · CPC title

• C08G77/06

  Preparatory processes · CPC title

• C09D183/08

  containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen · CPC title

• C08G77/26

  nitrogen-containing groups · CPC title