Sintered compact magnesium oxide target for sputtering, and method for producing same
US-10066290-B1 · Sep 4, 2018 · US
MgO sintered sputtering target
US11345990B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11345990-B2 |
| Application number | US-201916648842-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 6, 2019 |
| Priority date | Sep 13, 2018 |
| Publication date | May 31, 2022 |
| Grant date | May 31, 2022 |
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Abstract
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A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.
First claim
Opening claim text (preview).
The invention claimed is: 1. A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. 2. The MgO sintered sputtering target according to claim 1 , wherein the ratio of GOS (Grain Orientation Spread) being 0° to 1° is 90% or higher. 3. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 85% or higher. 4. The MgO sintered sputtering target according to claim 3 , wherein the ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 95% or higher. 5. The MgO sintered sputtering target according to claim 4 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 6. The MgO sintered sputtering target according to claim 5 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 7. The MgO sintered sputtering target according to claim 4 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 8. The MgO sintered sputtering target according to claim 3 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 9. The MgO sintered sputtering target according to claim 8 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 10. The MgO sintered sputtering target according to claim 3 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 11. The MgO sintered sputtering target according to claim 2 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 12. The MgO sintered sputtering target according to claim 11 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 13. The MgO sintered sputtering target according to claim 2 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 14. The MgO sintered sputtering target according to claim 1 , wherein the MgO sintered sputtering target has an average crystal grain size of 30 μm or more. 15. The MgO sintered sputtering target according to claim 14 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher. 16. The MgO sintered sputtering target according to claim 1 , wherein the MgO sintered sputtering target has a relative density of 99.9% or higher.
Assignees
Inventors
Classifications
- H01J37/3426Primary
Material · CPC title
Micrometer sized grains, i.e. from 1 to 100 micron · CPC title
- C23C14/081Primary
of aluminium, magnesium or beryllium · CPC title
Coating a support with a magnetic layer by sputtering · CPC title
- C23C14/3414Primary
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
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- What does patent US11345990B2 cover?
- A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.
- Who is the assignee on this patent?
- Jx Nippon Mining & Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification H01J37/3426. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 31 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).