Photomask, method of fabricating a photomask, and method of fabricating a semiconductor structure using a photomask

Patent metadata

Field	Value
Publication number	US-11340524-B2
Application number	US-202016794912-A
Country	US
Kind code	B2
Filing date	Feb 19, 2020
Priority date	Apr 1, 2019
Publication date	May 24, 2022
Grant date	May 24, 2022

Abstract

The present disclosure provides a photomask, including a front side having a patterned layer, a back side opposite to the front side, a sidewall connecting the front side and the back side, a reflective layer between the front side and the back side, and a polymer layer on the backside of the photomask.

First claim

What is claimed is:

1. A photomask, comprising:
a substrate, comprising:
a front side having a patterned mask layer;
a back side opposite to the front side;
a sidewall connecting the front side and the back side;

an extreme ultra-violet(EUV) reflective layer formed in a recess of the substrate; and
a polymer layer on the backside of the photomask, wherein the polymer layer comprises a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the back side of the photomask.

2. The photomask of claim 1 , wherein the polymer layer is further disposed at the sidewall of the photomask.

3. The photomask of claim 2 , wherein the polymer layer on the backside is physically separated from the polymer layer at the sidewall.

4. The photomask of claim 1 , wherein the thermoplastic polymer layer comprises thermoplastic polyurethanes (TPU) or polyvinylidene fluoride (PVDF).

5. The photomask of claim 1 , wherein the thermoplastic polymer comprises a crystalline-non crystalline conversion temperature in a range of from about 50 to 60 degrees Celsius.

6. The photomask of claim 1 , wherein the polymer layer further comprises an adhesive layer between the thermoplastic polymer and the back side of photomask.

7. The photomask of claim 6 , wherein the adhesive layer comprises electrically conductive materials.

8. The photomask of claim 1 , wherein at least a portion of the backside of the photomask is exposed from the polymer layer.

9. A protection layer for extreme ultra-violet (EUV) photomask, comprising:
an adhesive layer, wherein the adhesive layer comprises a conductive dopant consisting of a metallic ion or a graphene;
a thermoplastic layer over the adhesive layer;
a hydrophobic layer over the thermoplastic layer,
wherein the thermoplastic layer comprises polymer layer having a crystalline-non crystalline conversion temperature in a range of from about 50 to 60 degrees Celsius.

10. The protection layer of claim 9 , wherein the polymer layer comprises thermoplastic polyurethanes (TPU) or polyvinylidene fluoride (PVDF).

11. The protection layer of claim 9 , wherein the hydrophobic layer comprises polyvinylidene fluoride (PVDF), polyurethane (PU), polypropylene (PP), or polyvinyl chloride (PVC).

12. The protection layer of claim 9 , wherein the adhesive layer comprises acrylic, styrene ethylene butylene styrene (SEBS), or polyethylene.

13. The protection layer of claim 9 , wherein the metallic ion is silver ion.

14. A method for fabricating a photomask, comprising:
providing a photomask, comprising a substrate having a first surface and a second surface opposite to the first surface, an extreme ultra-violet(EUV) reflective layer, and a patterned mask layer over the first surface of the substrate;
forming a first protection layer over a first sidewall of the substrate, wherein the first sidewall connects between the first surface and the second surface, wherein the first protection layer comprises an adhesive layer facing the first sidewall; and
forming a second protection layer over a second sidewall of the substrate, wherein the second sidewall connects between the first surface and the second surface, wherein a corner of the substrate between the first sidewall and the second sidewall is exposed from the first protection layer and the second protection layer.

15. The method of claim 14 , wherein forming the first protection layer comprises manual application or robotic application.

16. The method of claim 14 , wherein forming the first protection layer further comprises forming a thermoplastic polymer layer over the adhesive layer.

17. The method of claim 16 , wherein forming the first protection layer further comprises forming a hydrophobic layer over the thermoplastic polymer layer.

18. The method of claim 14 , further comprising forming a third protection layer over the second surface of the substrate, the third protection layer is apart from the first protection layer.

19. The method of claim 14 , further comprising elevating a temperature of the photomask to be in a range between 50 degree Celsius to 60 degree Celsius, wherein the corner of the substrate between the first sidewall and the second sidewall is exposed from the first protection layer and the second protection layer after elevating the temperature of the photomask.

20. The method of claim 14 , further comprising adding dopant of metallic ion or graphene into the first protection layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Tzu Han
• Wen Chih-Wei
• Lin Chung-Hung

Classifications

• G03F1/48 Primary

  Protective coatings · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title

• G03F1/60

  Substrates · CPC title

• B32B27/40

  comprising polyurethanes · CPC title

• C09J201/08

  Carboxyl groups · CPC title