Semiconductor element and production method thereof
US-2018138135-A1 · May 17, 2018 · US
Method of manufacturing a semiconductor element front side electrode
US11335595B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11335595-B2 |
| Application number | US-201816481995-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 7, 2018 |
| Priority date | Feb 15, 2017 |
| Publication date | May 17, 2022 |
| Grant date | May 17, 2022 |
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Abstract
Official abstract text for this publication.
Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of manufacturing a semiconductor element, comprising the steps of: forming a front-side electrode on a front-back conduction-type substrate; and sequentially forming an electroless nickel-phosphorus plating layer and an electroless gold plating layer on the front-side electrode, wherein the step of forming the electroless nickel-phosphorus plating layer on the front-side electrode comprises performing an electroless nickel-phosphorus plating treatment while increasing at least one selected from the group consisting of a nickel concentration, a pH, and a stirring rate of an electroless nickel-phosphorus plating solution. 2. The method of manufacturing a semiconductor element according to claim 1 , wherein the step of forming the electroless nickel-phosphorus plating layer is performed by a zincate method. 3. The method of manufacturing a semiconductor element according to claim 1 , wherein the method further comprises a step of, after forming the front-side electrode using aluminum or an aluminum alloy, heating to melt the aluminum or the aluminum alloy, to thereby flatten surfaces of the front-side electrode. 4. A method of manufacturing a semiconductor element, comprising the steps of: forming a front-side electrode on a front-back conduction-type substrate; and sequentially forming an electroless nickel-phosphorus plating layer and an electroless gold plating layer on the front-side electrode, wherein the step of forming the electroless nickel-phosphorus plating layer on the front-side electrode comprises performing an electroless nickel-phosphorus plating treatment while changing at least one selected from the group consisting of a rocking rate and a rocking width. 5. The method of manufacturing a semiconductor element according to claim 4 , wherein the step of forming the electroless nickel-phosphorus plating layer is performed by a zincate method. 6. The method of manufacturing a semiconductor element according to claim 4 , wherein the method further comprises a step of, after forming the front-side electrode using aluminum or an aluminum alloy, heating to melt the aluminum or the aluminum alloy, to thereby flatten surfaces of the front-side electrode.
Assignees
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Classifications
batch processes · CPC title
Dispositions of multiple bond pads · CPC title
Multiple bond pads having different sizes · CPC title
comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title
Bond pads, in general · CPC title
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- What does patent US11335595B2 cover?
- Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W20/044. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 17 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).