Method for manufacturing semiconductor device
US-2017076948-A1 · Mar 16, 2017 · US
Semiconductor element and production method thereof
US2018138135A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018138135-A1 |
| Application number | US-201615564301-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 1, 2016 |
| Priority date | Apr 6, 2015 |
| Publication date | May 17, 2018 |
| Grant date | — |
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Abstract
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In a semiconductor element of the present invention, an electroless nickel-phosphorus plating layer and an electroless gold plating layer are formed on both a front-side electrode and a back-side electrode of a front-back conduction-type substrate. The front-side electrode and the back-side electrode are formed of aluminum or an aluminum alloy. The proportion of the thickness of the electroless nickel-phosphorus plating layer formed on the front-side electrode with respect to the thickness of the electroless nickel-phosphorus plating layer formed on the back-side electrode is in a range of 1.0 to 3.5. The semiconductor element of the present invention allows the occurrence of voids inside solder during mounting by soldering to be prevented.
First claim
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1 . A semiconductor element in which an electroless nickel-phosphorus plating layer and an electroless gold plating layer are formed on both a front-side electrode and a back-side electrode of a front-back conduction-type substrate, wherein the front-side electrode and the back-side electrode are formed of aluminum or an aluminum alloy; and wherein the proportion of a thickness of the electroless nickel-phosphorus plating layer formed on the front-side electrode with respect to a thickness of the electroless nickel-phosphorus plating layer formed on the back-side electrode is in a range of 1.0 to 3.5. 2 . The semiconductor element according to claim 1 , wherein the aluminum alloy that forms the front-side electrode and the back-side electrode contains an element nobler than aluminum. 3 . The semiconductor element according to claim 2 , wherein the element contained in the aluminum alloy that forms the front-side electrode is nobler than the element contained in the aluminum alloy that forms the back-side electrode. 4 . A method for producing a semiconductor element, the method comprising the formation of a front-side electrode and a back-side electrode on a front-back conduction-type substrate, followed by performing electroless nickel-phosphorus plating and electroless gold plating by a zincate method on both the front-side electrode and the back-side electrode simultaneously, wherein the front-side electrode and the back-side electrode are formed of aluminum or an aluminum alloy; and wherein the proportion of a surface area of the front-side electrode with respect to a surface area of the back-side electrode is set in a range of 0.3 to 0.85. 5 . The method for producing a semiconductor element according to claim 4 , wherein the aluminum alloy that forms the front-side electrode and the back-side electrode contains an element nobler than aluminum. 6 . The method for producing a semiconductor element according to claim 5 , wherein the element contained in the aluminum alloy that forms the front-side electrode is nobler than the element contained in the aluminum alloy that forms the back-side electrode. 7 . The method for producing a semiconductor element according to claim 4 , wherein the electroless nickel-phosphorus plating is performed while arranging a dummy material at a position opposing the back-side electrode. 8 . The method for producing a semiconductor element according to claim 4 , comprising the preparation of a plurality of front-back conduction-type substrates having the front-side electrode and the back-side electrode formed thereon, and performing the electroless nickel-phosphorus plating while opposing the back-side electrodes of the plurality of front-back conduction-type substrates each other.
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Classifications
Materials of bond wires · CPC title
Die-attach connectors and bond wires · CPC title
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comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title
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- What does patent US2018138135A1 cover?
- In a semiconductor element of the present invention, an electroless nickel-phosphorus plating layer and an electroless gold plating layer are formed on both a front-side electrode and a back-side electrode of a front-back conduction-type substrate. The front-side electrode and the back-side electrode are formed of aluminum or an aluminum alloy. The proportion of the thickness of the electroless…
- Who is the assignee on this patent?
- Mitsubishi Electric Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C18/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu May 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).