Device including semiconductor substrate containing gallium nitride and method for producing the same
US-2017335488-A1 · Nov 23, 2017 · US
US11332849B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11332849-B2 |
| Application number | US-201916366292-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 27, 2019 |
| Priority date | Oct 10, 2017 |
| Publication date | May 17, 2022 |
| Grant date | May 17, 2022 |
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A method of producing periodic polarization inversion structures requires the provision of first electrode piece part-arrays, each having electrode piece parts on a first main face of a ferroelectric crystal substrate. A voltage is applied on the first electrode piece part-arrays to form first periodic polarization inversion structures. Second electrode piece part-arrays are provided, each having electrode piece parts between the adjacent plural first periodic polarization inversion structures. A voltage is applied on the second electrode piece part-arrays to form second polarization inversion structures.
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The invention claimed is: 1. A method of producing periodic polarization inversion structures in a ferroelectric crystal substrate having a first main face, a second main face, a first side face and a second side face opposing said first side face in a lengthwise direction, the method comprising the steps of: providing first electrode piece part-arrays each comprising a plurality of electrode piece parts on said first main face of said ferroelectric crystal substrate; forming first periodic polarization inversion structures by applying a voltage on said first electrode piece part-arrays, each of said first periodic polarization structures including a first end nearest to said first side face and a second end nearest to said second side face; providing second electrode piece part-arrays each comprising a plurality of electrode piece parts, each of said second electrode piece part-arrays being present between said first periodic polarization inversion structures adjacent to each other and including a first end nearest to said first side face and a second end nearest to said second side face; and forming second periodic polarization inversion structures by applying a voltage on said second electrode piece part-arrays, wherein said first end of each of said first periodic polarization inversion structures is set apart from said first end of each of said second electrode piece part-arrays by a distance of 1-5 mm in the lengthwise direction. 2. The method of claim 1 , further comprising the steps of: forming insulating films between said electrode piece parts, respectively, on said first main face of said ferroelectric crystal substrate; providing a uniform electrode on said second main face of said ferroelectric crystal substrate; and applying said voltage between said electrode piece parts and said uniform electrode.
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