Atomic layer deposition of protective coatings for semiconductor process chamber components

Patent metadata

Field	Value
Publication number	US-11326253-B2
Application number	US-201715495624-A
Country	US
Kind code	B2
Filing date	Apr 24, 2017
Priority date	Apr 27, 2016
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from the group consisting of YOxFy, YAlxOy, YZrxOy and YZrxAlyOz.

First claim

What is claimed is:

1. A method comprising:
performing a plurality of iterations of a super-cycle of an atomic layer deposition process to deposit a film having a multi-component composition onto a bare surface of an uncoated chamber component, wherein performing an iteration of the super-cycle of the atomic layer deposition process comprises:
depositing a first film layer of yttrium oxide or yttrium fluoride, wherein the first film layer is grown from a first set of at least two precursors using the atomic layer deposition process, and wherein the first film layer has a first uniform thickness of two monolayers to about 10 nanometers;
depositing a second film layer of zirconium oxide or zirconium fluoride, wherein the second film layer is grown from a second set of at least two precursors using the atomic layer deposition process, wherein the second film layer has a second uniform thickness of two monolayers to about 10 nanometers; and
depositing a third film layer, the third film layer comprising aluminum oxide or aluminum fluoride, wherein the third film layer is grown from a third set of at least two precursors using the atomic layer deposition process, wherein the third film layer has a third uniform thickness of two monolayers to about 10 nanometers; and

annealing the film having the multi-component composition comprising a repeating stack of the first film layer, the second film layer and the third film layer at an annealing temperature to form an approximately homogenous, interdiffused YZr x Al y F z or YZr x Al y O z F w solid state phase of the first film layer, the second film layer and the third film layer, wherein x, y, z and w have values that are based on the first uniform thickness, the second uniform thickness and the third uniform thickness, and wherein the film having the multi-component composition is discrete from the bare surface of the uncoated chamber component.

2. The method of claim 1 , wherein an annealing temperature is configured to maintain the integrity of the uncoated chamber component and refrain from deforming, decomposing, or melting the uncoated chamber component or its bare surface.

3. The method of claim 1 , wherein the first film layer is deposited prior to deposition of the second film layer, and wherein the second film layer is deposited over the first film layer.

4. The method of claim 1 , wherein the first film layer comprises yttrium oxide, wherein a first precursor of the first set of at least two precursors comprises at least one of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadienyl)yttrium(III), or tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III), and wherein a second precursor of the first set of at least two precursors comprises at least one of H 2 O, O 2 , or O 3 .

5. The method of claim 1 , wherein the first film layer comprises yttrium fluoride, wherein the first set of at least two precursors comprise tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III) and TiF 4 .

6. The method of claim 1 , wherein the multi-component composition comprises alternating intact layers of at least the first film layer, the second film layer, and the third film layer prior to forming the approximately homogenous, interdiffused solid state phase of the first film layer, the second film layer and the third film layer.

7. The method of claim 1 , wherein the first film layer has a different thickness than the second film layer.

8. The method of claim 1 , wherein the first film layer and the second film layer have an equal thickness.

9. The method of claim 1 , wherein a temperature of the annealing is 800° C.-1800° C.

10. The method of claim 9 , wherein a duration of the annealing is approximately 12 hours.

11. The method of claim 1 , wherein the first film layer comprises the yttrium oxide.

12. A method comprising:
depositing a first film layer of a yttrium oxide or yttrium fluoride onto a surface of a chamber component for a processing chamber using a first number of repetitions of an atomic layer deposition process;
depositing a second film layer of zirconium oxide or zirconium fluoride onto the surface using a second number of repetitions of the atomic layer deposition process;
depositing an additional film layer of aluminum oxide or aluminum fluoride onto the surface using a third number of repetitions of the atomic layer deposition process; and
forming an interdiffused and homogeneous YZr x Al y F z or YZr x Al y O z F w solid state phase coating composition on the surface wherein x, y, z and w have values that are based on the first number of repetitions of the atomic layer deposition process that are used to deposit the first film layer, the second number of repetitions of the atomic layer deposition process that are used to deposit the second film layer, and the third number of repetitions of the atomic layer deposition process that are used to deposit the additional film layer.

13. The method of claim 12 , wherein an annealing temperature is configured to maintain the integrity of the chamber component and refrain from deforming, decomposing, or melting the chamber component or its bare surface.

14. The method of claim 12 , wherein the first film layer is deposited prior to deposition of the second film layer, and wherein the second film layer is deposited over the first film layer.

15. The method of claim 12 , wherein the first film layer comprises yttrium oxide, wherein a first precursor comprises at least one of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadienyl)yttrium(III), or tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III), and wherein a second precursor comprises at least one of H 2 O, O 2 , or O 3 .

16. The method of claim 12 , wherein the first film layer comprises yttrium fluoride, wherein a first set of at least two precursors comprise tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III) and TiF 4 .

17. The method of claim 12 , wherein the interdiffused and homogeneous YZr x Al y F z or YZr x Al y O z F w solid state phase coating composition comprises alternating intact layers of at least the first film layer, the second film layer, and the additional film layer prior to forming an approximately homogenous, interdiffused solid state phase of the first film layer, the second film layer and the third film layer.

18. The method of claim 12 , further comprising annealing, wherein a temperature of the annealing is 800° C.-1800° C.

19. The method of claim 12 , wherein the chamber component has a portion having a length to diameter (L:D) aspect ratio ranging from about 50:1 to about 100:1 and wherein the surface is an interior portion of the portion having the L:D aspect ratio ranging from about 50:1 to about 100:1.

Assignees

• Applied Materials Inc

Inventors

• Fenwick David
• Sun Jennifer Y

Classifications

• C23C28/042

  including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides · CPC title

• C23C16/40

  Oxides · CPC title

• C23C16/403

  of aluminium, magnesium or beryllium · CPC title

• C23C16/4404 Primary

  Coatings or surface treatment on the inside of the reaction chamber or on parts thereof · CPC title

• C23C16/45563

  Gas nozzles · CPC title