Optoelectronic device, conversion element, method of producing a plurality of conversion elements and method of producing an optoelectronic device

Patent metadata

Field	Value
Publication number	US-11322662-B2
Application number	US-201916398889-A
Country	US
Kind code	B2
Filing date	Apr 30, 2019
Priority date	May 2, 2018
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

The optoelectronic device including a radiation emitting semiconductor chip emitting electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range at least partially and emitting electromagnetic radiation from a light coupling-out surface, wherein the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip.

First claim

What is claimed is:

1. A method of producing an optoelectronic device comprising:
providing a radiation emitting semiconductor chip having a radiation exit surface from which electromagnetic radiation of a first wavelength range is emitted during operation of the semiconductor chip,
applying a conversion element to the radiation exit surface of the semiconductor chip, and
applying transparent elements to at least a portion of the radiation exit surface,
wherein a light coupling-in surface of the conversion element faces to the radiation exit surface,
the light coupling-out surface of the conversion element is smaller than the radiation exit surface of the semiconductor chip,
wherein the transparent element has a cross section with a rounded end region followed by a rectangular dam region, said rectangular dam region faces a light entrance surface of the conversion plate and said rounded end region faces the radiation exit surface of the conversion plate.

2. The method according to claim 1 , wherein
the conversion element has a conversion plate with at least one side surface perpendicular to a main extension plane of the conversion plate, and
a transparent dam is applied to the exposed regions of the radiation exit surface, and the transparent dam adjacent to the side surface of the conversion plate.

3. The method according to claim 1 , wherein
the conversion element has a conversion plate with at least one side face perpendicular to a main extension plane of the conversion plate is provided, and
the conversion plate is applied to the radiation exit surface of the semiconductor chip with an amount of transparent resin such that transparent fillets of the transparent resin are formed on the side surfaces of the conversion plate, when the semiconductor chip is pressed on.

4. The method according to claim 1 , wherein the semiconductor chip and the conversion element are laterally covered with an absorbing potting.

5. The method according to claim 1 , wherein the transparent element is made of a resin.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Brandl Martin
• Baumgartner Alexander
• Stoll Ion

Classifications

• H10H20/853

  characterised by their shape · CPC title

• H10H20/0362

  of encapsulations · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/8514 Primary

  characterised by their shape, e.g. plate or foil · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title