Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-11322365-B2
Application number	US-202017029300-A
Country	US
Kind code	B2
Filing date	Sep 23, 2020
Priority date	Sep 30, 2019
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

There is provided a substrate processing method including: reducing an oxide of a ruthenium film by supplying a hydrogen-containing gas to a substrate including the ruthenium film; etching the ruthenium film by supplying an oxygen-containing gas to the substrate so as to oxidize the ruthenium film; and repeating, multiple times, a cycle including reducing the oxide of the ruthenium film and etching the ruthenium film.

First claim

What is claimed is:

1. A substrate processing method comprising:
repeating, multiple times, a cycle including:
reducing an oxide of a ruthenium film by supplying a hydrogen-containing gas to a substrate including the ruthenium film;
etching the ruthenium film by supplying an oxygen-containing gas to the substrate so as to oxidize the ruthenium film; and
stopping the etching of the ruthenium film,

wherein the reducing the oxide of the ruthenium film is performed when the etching of the ruthenium film is stopped,
wherein the hydrogen-containing gas is at least one selected from a group consisting of a H 2 gas, a NH 3 gas, a hydrazine gas, and a hydrazine compound gas; and
wherein the oxygen-containing gas is at least one selected from a group consisting of an O 2 gas and an O 3 gas.

2. The substrate processing method of claim 1 , wherein the hydrogen- containing gas is a plasmarized gas.

3. The substrate processing method of claim 1 , wherein the oxygen-containing gas is a plasmarized gas.

4. The substrate processing method of claim 1 , wherein the cycle further includes supplying a carbon-containing gas to the substrate so that the carbon-containing gas reacts with a surface of the ruthenium film.

5. The substrate processing method of claim 4 , wherein the carbon-containing gas includes at least one selected from a group consisting of a hydrocarbon gas and an alcohol gas.

6. The substrate processing method of claim 1 , wherein the substrate includes an insulation film and the ruthenium film buried in a recess of the insulation film.

Assignees

• Tokyo Electron Ltd

Inventors

• Murakami Hiroki

Classifications

• H10P72/0421 Primary

  for drying etching · CPC title

• H10P50/267 Primary

  using plasmas · CPC title

• H10P72/135

  characterised by a material, a roughness, a coating or the like · CPC title

• H10P72/12

  Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements · CPC title

• H10P72/0436

  mainly by radiation · CPC title