Infrared sensor and method for cooling bolometer infrared ray receiver of infrared sensor

Patent metadata

Field	Value
Publication number	US-11320313-B2
Application number	US-202016796115-A
Country	US
Kind code	B2
Filing date	Feb 20, 2020
Priority date	Dec 11, 2017
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

First claim

What is claimed is:

1. An infrared sensor comprising:
a base substrate including a recess;
a thermopile infrared ray receiver; and
a Peltier device, wherein:
the thermopile infrared ray receiver comprises:
an infrared ray absorption layer;
a thermopile first beam thermally connected to the infrared ray absorption layer and formed of a first p-type semiconductor material; and
a thermopile second beam thermally connected to the infrared ray absorption layer and formed of first n-type semiconductor material,

the Peltier device is interposed between the thermopile infrared ray receiver and the recess,
a front surface of the thermopile infrared ray receiver is irradiated with the infrared ray,
the Peltier device comprises a Peltier first beam formed of a second p-type semiconductor material and a Peltier second beam formed of a second n-type semiconductor material,
the Peltier device is in contact with a back surface of the thermopile infrared ray receiver,
one end of the thermopile first beam, one end of the thermopile second beam, one end of the Peltier first beam, and one end of the Peltier second beam are connected to the base substrate,
the thermopile infrared ray receiver, the Peltier device, the thermopile first beam, the thermopile second beam, the Peltier first beam, and the Peltier second beam are suspended above the base substrate,
the thermopile first beam has a first phononic crystal structure including a plurality of through holes arranged regularly,
the thermopile second beam has a second phononic crystal structure including a plurality of through holes arranged regularly,
the Peltier first beam has a third phononic crystal structure including a plurality of through holes arranged regularly,
the Peltier second beam has a fourth phononic crystal structure including a plurality of through holes arranged regularly,
the plurality of through holes of the first phononic crystal structure are regularly arranged with a first period,
the plurality of through holes of the second phononic crystal structure are regularly arranged with a second period,
the plurality of through holes of the third phononic crystal structure are regularly arranged with a third period,
the plurality of through holes of the fourth phononic crystal structure are regularly arranged with a fourth period,
the thermopile first beam, the thermopile second beam, the Peltier first beam, and the Peltier second beam respectively include a first domain, a second domain, a third domain, and a fourth domain,
the first domain, the second domain, the third domain, and the fourth domain respectively include the first phononic crystal structure, the second phononic crystal structure, the third phononic crystal structure, and the fourth phononic crystal structure,
the thermopile first beam, the thermopile second beam, the Peltier first beam, and the Peltier second beam respectively include a fifth domain, a sixth domain, a seventh domain, and an eighth domain,
in the fifth domain, a fifth phononic crystal structure including a plurality of through holes regularly arranged with a fifth period is formed,
in the sixth domain, a sixth phononic crystal structure including a plurality of through holes regularly arranged with a sixth period is formed,
in the seventh domain, a seventh phononic crystal structure including a plurality of through holes regularly arranged with a seventh period is formed,
in the eighth domain, an eighth phononic crystal structure including a plurality of through holes regularly arranged with an eighth period is formed,
as seen in a plan view, the first domain is interposed between the fifth domain and the infrared ray absorption layer,
as seen in the plan view, the second domain is interposed between the sixth domain and the infrared ray absorption layer,
as seen in the plan view, the third domain is interposed between the seventh domain and the infrared ray absorption layer,
as seen in the plan view, the fourth domain is interposed between the eighth domain and the infrared ray absorption layer,
the fifth period is greater than the first period,
the sixth period is greater than the second period,
the seventh period is greater than the third period, and
the eighth period is greater than the fourth period.

2. The infrared sensor according to claim 1 , wherein
in the first domain, among the plurality of through holes regularly arranged with the first period in the first domain, a plurality of through holes regularly arranged with a ninth period different from the first period are formed,
in the second domain, among the plurality of through holes regularly arranged with the second period in the second domain, a plurality of through holes regularly arranged with a tenth period different from the second period are formed,
in the third domain, among the plurality of through holes regularly arranged with the third period in the third domain, a plurality of through holes regularly arranged with an eleventh period different from the third period are formed,
in the fourth domain, among the plurality of through holes regularly arranged with the fourth period in the fourth domain, a plurality of through holes regularly arranged with a twelfth period different from the fourth period are formed,
in the fifth domain, among the plurality of through holes regularly arranged with the fifth period in the fifth domain, a plurality of through holes regularly arranged with a thirteenth period different from the fifth period are formed,
in the sixth domain, among the plurality of through holes regularly arranged with the sixth period in the sixth domain, a plurality of through holes regularly arranged with a fourteenth period different from the sixth period are formed,
in the seventh domain, among the plurality of through holes regularly arranged with the seventh period in the seventh domain, a plurality of through holes regularly arranged by fifteenth period different from the seventh period are formed, and
in the eighth domain, among the plurality of through holes regularly arranged with the eighth period in the eighth domain, a plurality of through holes regularly arranged with a sixteenth period different from the eighth period are formed.

3. The infrared sensor according to claim 1 , wherein
the plurality of through holes regularly arranged with the first period, the plurality of through holes regularly arranged with the second period, the plurality of through holes regularly arranged with the third period, the plurality of through holes regularly arranged with the fourth period, the plurality of through holes regularly arranged with the fifth period, the plurality of through holes regularly arranged with the sixth period, the plurality of through holes regularly arranged with the seventh period, and the plurality of through holes regularly arranged with the eighth period are each at least five in number.

4. The infrared sensor according to claim 1 , wherein a unit lattice of a periodic structure composing each of the first domain, the second domain, the third domain, the fourth domain, the fifth domain, the sixth domain, the seventh domain, and the eighth domain is one of a tetragonal lattice, a hexagonal lattice, a rectangular lattice, and a centered-rectangular lattice.

5. The infrared sensor according to claim 1 , wherein the first period, the second period, the third period, the fourth period, the fifth period, the sixth period, the seventh period, and the eighth period each have a value of not less than 1 nm and not more than 300 nm.

6. The infrared sensor according to claim 1 , wherein a value obtained by dividing a value of a diameter of each of the plurality of through holes regularly arranged with the first period by a value of the first period, a value obtained by div

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Kawasaki Takashi
• Takahashi Kouhei
• Tambo Naoki
• Naito Yasuyuki

Classifications

• G01J2005/062

  Peltier · CPC title

• G01J5/061 Primary

  by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats · CPC title

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• G01J5/023 Primary

  Particular leg structure or construction or shape; Nanotubes · CPC title

• G01J5/06

  Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity (for adjusting of solid angle of collected radiation G01J5/07; means for wavelength selection G01J5/0801) · CPC title