Method for cleaning gas supply line and processing system

Patent metadata

Field	Value
Publication number	US-11292035-B2
Application number	US-201916393462-A
Country	US
Kind code	B2
Filing date	Apr 24, 2019
Priority date	Apr 25, 2018
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

A method includes forming a film of a compound on an inner wall of a gas supply line by polymerization of a first compound and a second compound by controlling a temperature of the gas supply line to a first temperature at which the first compound and the second compound are polymerized in a state where a first gas containing the first compound and a second gas containing the second compound are supplied to the gas supply line, and removing the film by controlling the temperature of the gas supply line to a second temperature at which the film is depolymerized after predetermined processing is performed on a target object in a processing chamber by a processing gas supplied into the processing chamber through the gas supply line having the film. The first compound is isocyanate. The second compound is amine or a compound having a hydroxyl group.

First claim

The invention claimed is:

1. A method for cleaning a gas supply line comprising:
forming a film of a compound on an inner wall of a gas supply line by polymerization of a first compound and a second compound by controlling a temperature of the gas supply line to a first temperature at which the first compound and the second compound are polymerized in a state where a first gas containing the first compound and a second gas containing the second compound are supplied to the gas supply line; and
removing the film by controlling the temperature of the gas supply line to a second temperature at which the film is depolymerized after predetermined processing is performed on a target object in a processing chamber by a processing gas supplied into the processing chamber through the gas supply line having the film,
wherein the first compound is isocyanate,
wherein the second compound is amine or a compound having a hydroxyl group, and
wherein said forming the film includes:
controlling the temperature of the gas supply line to the second temperature,
supplying the first gas and the second gas into the gas supply line in a state where valves at both ends of the gas supply line are opened, wherein each of said valves can open or close the gas supply line, and
forming the film of the compound on the inner wall of the gas supply line by controlling a temperature of the gas line to the first temperature in a state where the valves at both ends of the gas supply line are closed.

2. The method of claim 1 , wherein said forming the film is executed multiple
times before the predetermined processing is performed on the target object in the processing chamber by the processing gas supplied into the processing chamber through the gas supply line having the film.

3. The method of claim 1 , wherein said forming a film is executed again after said removing the film.

4. The method of claim 1 , wherein said forming a film is executed again after said removing the film.

Assignees

• Tokyo Electron Ltd

Inventors

• Matsuda risako

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title