Ceramic matrix composite manufacturing

Patent metadata

Field	Value
Publication number	US-11286209-B2
Application number	US-202016893745-A
Country	US
Kind code	B2
Filing date	Jun 5, 2020
Priority date	Jul 14, 2017
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

A method of manufacturing a ceramic matrix composite component may include introducing a gaseous precursor into an inlet portion of a chamber that houses a porous preform and introducing a gaseous mitigation agent into an outlet portion of the chamber that is downstream of the inlet portion of the chamber. The gaseous precursor may include methyltrichlorosilane (MTS) and the gaseous mitigation agent may include hydrogen gas. The introduction of the gaseous precursor may result in densification of the porous preform(s) and the introduction of the gaseous mitigation agent may shift the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits, which can accumulate in an exhaust conduit 340 of the system.

First claim

What is claimed is:

1. A system of manufacturing a ceramic matrix composite component, the system comprising:
a chamber comprising an inlet portion and an outlet portion, wherein the inlet portion is configured to house a porous preform, wherein the porous preform is disposed in the inlet portion of the chamber;
a first inlet for introducing a gaseous precursor into the inlet portion of the chamber, wherein the gaseous precursor infiltrates the porous preform housed in the inlet portion of the chamber to densify the porous preform;
a second inlet for introducing a gaseous mitigation agent into the outlet portion of the chamber, wherein the second inlet is configured to allow flow of the gaseous mitigation agent through the outlet portion of the chamber, wherein the outlet portion is configured for introduction of the gaseous precursor and gaseous mitigation agent simultaneously, wherein the outlet portion is downstream of the inlet portion of the chamber;
a gas mixing space defined by the outlet portion of the chamber, wherein the gas mixing space loaded with a gas mixing substrate, wherein the gas mixing substrate is only disposed in the outlet portion of the chamber; and
an exhaust conduit coupled in fluidic communication with the outlet portion of the chamber.

2. The system of claim 1 , wherein the inlet portion comprises retention spacers for retaining multiple, distributed porous preforms in place within the inlet portion of the chamber.

3. The system of claim 1 , wherein the second inlet of the outlet portion is disposed and configured to introduce the gaseous mitigation agent into an upstream side of the outlet portion of the chamber.

4. The system of claim 3 , wherein the second inlet is disposed in a side wall of the outlet portion of the chamber.

5. The system of claim 3 , wherein the second inlet comprises a conduit extending through the first inlet and through the inlet portion of the chamber.

6. The system of claim 1 , wherein the gas mixing substrate comprises volcanic rock.

7. The system of claim 1 , wherein the gas mixing substrate comprises graphite.

8. A chemical vapor deposition apparatus comprising:
a reactor furnace comprising an inlet portion and an outlet portion, wherein the inlet portion is configured to house a porous preform, wherein the porous preform is disposed in the inlet portion of the reactor furnace;
a first inlet for introducing a gaseous precursor into the inlet portion of the reactor furnace, wherein the gaseous precursor infiltrates the porous preform housed in the inlet portion of the reactor furnace to densify the porous preform;
a second inlet for introducing a gaseous mitigation agent into the outlet portion of the reactor furnace, wherein the gaseous mitigation agent is flows through the outlet portion of the furnace, wherein the outlet portion is configured for introduction of the gaseous precursor and gaseous mitigation agent simultaneously, wherein the outlet portion is downstream of the inlet portion of the furnace; and
an exhaust conduit coupled in fluidic communication with the outlet portion of the reactor furnace.

9. The chemical vapor deposition apparatus of claim 8 , further comprising a first supply conduit coupled to the first inlet and a first valve coupled to the first supply conduit to control flow of the gaseous precursor, wherein the gaseous precursor comprises methyltrichlorosilane (MTS).

10. The chemical vapor deposition apparatus of claim 9 , further comprising a second supply conduit coupled to the second inlet and a second valve coupled to the second supply conduit to control flow of the gaseous mitigation agent, wherein the gaseous mitigation agent comprises hydrogen gas.

Assignees

• Goodrich Corp

Inventors

• She Ying
• Menon Naveen G
• Dardas Zissis A
• Filburn Thomas P

Classifications

• C04B2235/5244

  Silicon carbide · CPC title

• C23C16/325

  Silicon carbide · CPC title

• C23C16/4401

  Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title

• C04B2235/46

  Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase · CPC title

• C04B35/83

  Carbon fibres in a carbon matrix · CPC title