Heat-resistant composite material production method and production device

Patent metadata

Field	Value
Publication number	US-2016305015-A1
Application number	US-201615194887-A
Country	US
Kind code	A1
Filing date	Jun 28, 2016
Priority date	Feb 17, 2014
Publication date	Oct 20, 2016
Grant date	—

Abstract

In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.

First claim

What is claimed is:

1 . A method of producing a heat-resistant composite material using chemical vapor deposition or chemical vapor infiltration, the method comprising the steps of:
accommodating a base material in a reaction furnace; and causing precursor gas, additive gas, and carrier gas to flow in the reaction furnace to deposit silicon carbide on the base material for film formation, wherein the precursor gas includes tetramethylsilane, and the additive gas includes molecules containing chlorine.

2 . The method of manufacturing a heat-resistant composite material according to claim 1 , wherein
the additive gas contains at least one of a group consisting of hydrogen chloride, monochloromonomethylsilane, methyldichlorosilane, methyltrichlorosilane, dimethylmonochlorosilane, dimethyldichlorosilane, trimethylmonochlorosilane, monochlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, chlorodisilane, dichlorodisilane, hexachlorodisilane, octachlorotrisilane, monochloromethane, dichloromethane, chloroform, tetrachloromethane, monochloroacetylene, dichloroacetylene, monochloroethylene, dichloroethylene, trichloroethylene, tetrachloroethylene, monochloroethane, dichloroethane, trichloroethane, tetrachloroethane, pentachloroethane, hexachloroethane, monochloropropane, dichloropropane, trichloropropane, tetrachloropropane, pentachloropropane, hexachloropropane, heptachloropropane, octachloropropane, and chlorine molecules.

3 . The method of manufacturing a heat-resistant composite material according to claim 2 , wherein the additive gas contains at least one of hydrogen chloride and monochloromethane.

4 . The method of manufacturing a heat-resistant composite material according to claim 3 , wherein the additive gas contains hydrogen chloride, and a mole ratio α of tetramethylsilane to hydrogen chloride satisfies 1<α≦3 where the number of moles of tetramethylsilane is 1.

5 . The method of manufacturing a heat-resistant composite material according to claim 1 , wherein
growth rate and filling uniformity at the film formation of silicon carbide are controlled through an amount of the additive gas.

6 . The method of manufacturing a heat-resistant composite material according to claim 5 , wherein
the film formation of silicon carbide follows a first-order reaction, and the growth rate and filling uniformity at the film formation of silicon carbide are controlled by controlling probability of a growth species sticking to the base material through the amount of the additive gas.

7 . The method of manufacturing a heat-resistant composite material according to claim 5 , wherein
the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, and the growth rate and filling uniformity at the film formation of silicon carbide are controlled by adjusting the amount of the additive gas so that the film formation is performed in a zero-order reaction region of the Langmuir-Hinshelwood rate formula.

8 . The method of manufacturing a heat-resistant composite material according to claim 5 , wherein the growth rate and filling uniformity at the film formation of silicon carbide are optimized.

9 . The method of manufacturing a heat-resistant composite material according to claim 5 , wherein the distribution of growth rate at the film formation of silicon carbide in terms of the position in the reaction furnace is controlled through the amount of the additive gas.

10 . The method of manufacturing a heat-resistant composite material according to claim 9 , wherein the distribution of growth rate is optimized to be uniform.

11 . The method of manufacturing a heat-resistant composite material according to claim 9 , wherein the precursor gas is supplied through a plurality of positions located across the reaction furnace from the upstream end to the downstream end.

12 . The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the precursor gas contains at least any one of methyltrichlorosilane and dimethyldichlorosilane.

13 . The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the carrier gas contains at least one of hydrogen, nitrogen, helium, and argon.

14 . The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the additive gas includes an effect of inhibiting film formation.

15 . The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the base material includes at least any one of a fiber preform, a substrate provided with a trench, and a porous substrate.

16 . The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the reaction furnace is a hot-wall furnace.

17 . A heat-resistant composite material producing device which uses a method of producing a heat-resistant composite material according to claim 1 , the device comprising:
a reaction furnace accommodating a base material; a precursor gas supply source supplying precursor gas to the reaction furnace; a carrier gas supply source supplying carrier gas to the reaction furnace; an additive gas supply source supplying additive gas to the reaction furnace; and a controller controlling the supply of the additive gas, wherein the precursor gas supply source supplies the precursor gas including tetramethylsilane, and the additive gas supply source supplies the additive gas including molecules containing chlorine.

Assignees

• Ihi Corp
• Univ Tokyo

Inventors

• Nakamura Takeshi
• Hotozuka Kozue
• Fukushima Yasuyuki
• Shimogaki Yukihiro
• Momose Takeshi
• Sugiura Hidetoshi
• Shima Kohei
• Funato Yuichi

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C04B35/565

  based on silicon carbide · CPC title

• C04B2235/3826

  Silicon carbides · CPC title