Patterned metallization for hybrid metal-semiconductor mirror of high reflectivity

Patent metadata

Field	Value
Publication number	US-11283241-B2
Application number	US-201716464147-A
Country	US
Kind code	B2
Filing date	Dec 7, 2017
Priority date	Dec 7, 2016
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

A reflector for optical devices is disclosed. The reflector includes a distributed Bragg reflector and a metal reflector. The metal reflector is contained within one or more apertures defined by a material having good adliesion to a semiconductor material. A method for bonding the resulting structure to a heat spreader is also disclosed.

First claim

What is claimed is:

1. A reflector for an optical device, comprising:
a distributed Bragg reflector:
a metal matrix having a front side in direct contact with the distributed Bragg reflector, the metal matrix defining one or more apertures; and
a layer of reflective metal having a reflectance of greater than 97% at a predetermined wavelength at normal incidence in direct contact with the distributed Bragg reflector through the apertures;
wherein the metal matrix has a back side, and wherein the layer of reflective metal also directly contacts the back side of the metal matrix outside of the area of the apertures.

2. The reflector of claim 1 , wherein the layer of reflective metal is gold.

3. The reflector of claim 1 , wherein the reflective metal is selected from the group of silver and aluminum.

4. The reflector of claim 1 , wherein the metal matrix is titanium or chromium.

5. The reflector of claim 1 , wherein the distributed Bragg reflector includes a phase matching layer with which the metal matrix and the layer of reflective metal make contact.

6. The reflector of claim 1 , further comprising a layer of platinum in direct contact with a back side of the reflective metal.

7. The reflector of claim 6 , wherein the layer of platinum has a back side, and wherein the reflector includes a layer of gold in direct contact with the layer of indium.

8. The reflector of claim 7 , further comprising a heat spreader in direct contact with the layer of indium.

9. The device of claim 1 , wherein the material of the metal matrix has a reflectance of less than 62% at the predetermined wavelength at normal incidence.

10. A method of fabricating a reflector for an optical
device, the method comprising;
on a semiconductor substrate, forming a distributed Bragg reflector in
contact with the semiconductor substrate;
on the distributed Bragg reflector, forming a metal matrix defining a plurality of apertures: and
on the distributed Bragg reflector in the area of the apertures, forming a layer of reflective metal having a reflectance of 97% at a predetermined wavelength.

11. The method of claim 10 , wherein the reflective metal is gold and the metal matrix is titanium.

12. The method of claim 10 , further comprising forming, on a back side of the layer of reflective metal a layer of platinum, a layer of gold, and a layer of indium.

13. A reflector for an optical device, comprising:
a distributed Bragg reflector having a continuous planar rear side:
a metal matrix having a planar front side in direct contact with the continuous planar rear side of the distributed Bragg reflector, the metal matrix defining one or more apertures; and
a layer of reflective metal in direct contact with the distributed Bragg reflector through the apertures.

Assignees

• Univ Arizona
• Arizona Board Of Regents On Behalf Of Univ Of Arizona

Inventors

• Laurain Alexandre
• Moloney Jerome V
• Gbele Patrick Kokou

Classifications

• H01S5/041

  Optical pumping · CPC title

• H01S5/14

  External cavity lasers (H01S5/18 takes precedence; mode locking H01S5/065) · CPC title

• H01S5/0216

  using an intermediate compound, e.g. a glue or solder · CPC title

• H01S5/187

  using Bragg reflection · CPC title

• H01S5/18377 Primary

  comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers · CPC title