Semiconductor device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9705044-B2
Application number	US-201314761713-A
Country	US
Kind code	B2
Filing date	Dec 6, 2013
Priority date	Feb 7, 2013
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

To suppress or prevent erosion (decrease in film thickness), water absorption, or cracking of a DBR film surface in washing or etching treatment in a downstream process. The DBR film structure of a DBR film 7 D includes a pair of or a plurality of pairs of a deposited SiO 2 film and a deposited TiO 2 film. Such a top layer of DBR film structures has hitherto been a deposited SiO 2 film that provides high reflectance. In order to prevent erosion while maintaining high reflectance, the top layer herein is a high-refractive-index thin film (for example, a deposited TiO 2 film) having a thickness in the range of 1 to 13 nm, and a tapered DBR end portion (a slope having a taper angle in the range of 15 to 45 degrees) is formed by vapor deposition in a lift-off process. The high-refractive-index thin film is overlaid with a reflective metal film 8 D serving as a first layer.

First claim

The invention claimed is:

1. A semiconductor light-emitting device, comprising:
a light-emitting structural body including an active layer that emits light; and
a DBR film structure serving as a reflective film, the DBR film structure including:
an inner low-refractive-index film;
a pair of or a plurality of continuously formed pairs of a high-refractive-index film and a low-refractive-index film formed on the inner low-refractive-index film in this order from an inner side to an outer side; and
a thin film with a high-refractive-index formed on the low-refractive-index film in the pair of or an outermost pair among the plurality of continuously formed pairs of the high-refractive-index film and the low-refractive-index film; wherein

the thin film with the high-refractive-index is thinner than the high-refractive-index film, and formed, as a final outermost film serving as a surface of the DBR film structure, to protect the interior of the DBR film structure;
the inner low-refractive-index film is closer to the active layer than any other film included in the DBR film structure; and
the final outermost film is farther from the active layer than an other film included in the DBR film structure.

2. The semiconductor light-emitting device according to claim 1 , wherein the low-refractive-index film is a SiO 2 film, the high-refractive-index film is a TiO 2 film, and the thin film with the high-refractive-index is a TiO 2 film having a thickness in the range of 1 to 13 nm.

3. The semiconductor light-emitting device according to claim 1 , wherein the DBR film structure has a sloped pattern edge portion, and the thickness of the pattern edge portion decreases toward an edge at a cross-sectional taper angle in the range of 15 to 45 degrees.

4. The semiconductor light-emitting device according to claim 1 , further comprising a metal film on the DBR film structure and on an underlayer of the DBR film structure.

5. A method for producing the semiconductor light-emitting device according to claim 3 , comprising a lift-off process of forming a resist pattern having an overhang in cross-section, forming the slope of the DBR film structure around the overhang of the resist pattern by DBR vapor deposition treatment, and removing the resist pattern.

Assignees

• Sharp Kk

Inventors

• Sasaki Hiroshi

Classifications

• H01S5/18369

  based on dielectric materials · CPC title

• H01L2933/0025

  Electricity · mapped topic

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title

• H01S5/18377

  comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers · CPC title

• H01S5/18305

  with emission through the substrate, i.e. bottom emission · CPC title