Semiconductor substrate cleaning agent

Patent metadata

Field	Value
Publication number	US-11279905-B2
Application number	US-201716478436-A
Country	US
Kind code	B2
Filing date	Dec 28, 2017
Priority date	Jan 17, 2017
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

To provide a cleaning agent that can remove impurities such as metal polishing dust adhering to a semiconductor substrate without corroding metal and can prevent re-adhesion of the impurities.The semiconductor substrate cleaning agent of the present invention contains at least the following component (A) and component (B):Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000; andComponent (B): water.It is preferable that the water-soluble oligomer is at least one compound selected from compounds represented by the following formulas (a-1) to (a-3).Ra1O—(C3H6O2)n—H  (a-1)Ra2O—(Ra3O)n′—H  (a-2)(Ra4)3-s—N—[(Ra5O)n″—H]s  (a-3)

First claim

The invention claimed is:

1. A semiconductor substrate cleaning agent containing at least the following component (A) and component (B):
Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000; and
Component (B): water,
wherein the component (A) comprises at least one compound selected from the group consisting of a compound represented by the formula (a-1) and a compound represented by the formula (a-3):
R a1 O—(C 3 H 6 O 2 ) n —H  (a-1)

wherein R a1 denotes a hydrogen atom, a hydrocarbon group having 1 to 18 carbon atoms which may have a hydroxyl group, or an acyl group having 2 to 24 carbon atoms; and n denotes a mean degree of polymerization of the glycerol unit shown in the parentheses and is an integer of 10 to 60; and
(R a4 ) 3-s —N—[(R a5 O) n″ —H] s   (a-3)

wherein R a4 denotes an alkyl group having 1 to 20 carbon atoms; R a5 denotes an ethylene group or a propylene group; n″ denotes a mean degree of polymerization of the ethylene oxide unit or the propylene oxide unit shown in the round brackets and is an integer of 3 to 15; s denotes 1 or 2; and when s is 1, two R a4 may be identical or different, and when s is 2, the two groups in the square brackets may be identical or different.

2. The semiconductor substrate cleaning agent according to claim 1 , wherein the content of component (A) is not less than 0.1% by weight relative to the total amount of the semiconductor substrate cleaning agent.

3. The semiconductor substrate cleaning agent according to claim 1 , wherein the chloride ion content is 0.01 to 50 ppm.

4. The semiconductor substrate cleaning agent according to claim 1 , containing the following component (C):
Component (C): amine.

5. The semiconductor substrate cleaning agent according to claim 4 , wherein the component (C) is an alkanolamine represented by the following formula (c5):

wherein R c1′ and R c2′ , which are identical or different, are a hydrogen atom or an aliphatic hydrocarbon group; and R c3′ is an aliphatic hydrocarbon group having a hydroxyl group.

6. A semiconductor substrate cleaning agent containing at least the following component (A), component (B), and component (C):
Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000;
Component (B): water; and
Component (C): amine,
wherein the component (A) comprises at least one compound selected from the group consisting of a compound represented by the formula (a-1) and a compound represented by the formula (a-3):
R a1 O—(C 3 H 6 O 2 ) n —H  (a-1)

wherein R a1 denotes a hydrogen atom, a hydrocarbon group having 1 to 18 carbon atoms which may have a hydroxyl group, or an acyl group having 2 to 24 carbon atoms; and n denotes a mean degree of polymerization of the glycerol unit shown in the parentheses and is an integer of 2 to 60; and
(R a4 ) 3-s —N—[(R a5 O) n″ —H] s   (a-3)

wherein R a4 denotes an alkyl group having 1 to 20 carbon atoms; R a5 denotes an ethylene group or a propylene group; n″ denotes a mean degree of polymerization of the ethylene oxide unit or the propylene oxide unit shown in the round brackets and is an integer of 3 to 15; s denotes 1 or 2; and when s is 1, two R a4 may be identical or different, and when s is 2, the two groups in the square brackets may be identical or different, and
wherein the content of component (C) is 0.1 to 2.0 parts by weight relative to 1 part by weight of the component (A).

7. A semiconductor substrate cleaning agent containing at least the following component (A), component (B), and component (D):
Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000;
Component (B): water; and
Component (D): hydrogen peroxide,
wherein the component (A) comprises at least one compound selected from the group consisting of a compound represented by the formula (a-1) and a compound represented by the formula (a-3):
R a1 O—(C 3 H 6 O 2 ) n —H  (a-1)

wherein R a1 denotes a hydrogen atom, a hydrocarbon group having 1 to 18 carbon atoms which may have a hydroxyl group, or an acyl group having 2 to 24 carbon atoms; and n denotes a mean degree of polymerization of the glycerol unit shown in the parentheses and is an integer of 2 to 60; and
(R a4 ) 3-s —N—[(R a5 O) n″ —H] s   (a-3)

wherein R a4 denotes an alkyl group having 1 to 20 carbon atoms; R a5 denotes an ethylene group or a propylene group; n″ denotes a mean degree of polymerization of the ethylene oxide unit or the propylene oxide unit shown in the round brackets and is an integer of 3 to 15; s denotes 1 or 2; and when s is 1, two R a4 may be identical or different, and when s is 2, the two groups in the square brackets may be identical or different, and
wherein the semiconductor substrate cleaning agent contains 0.1 to 3.0 parts by weight of the component (D) relative to 1 part by weight of the component (A).

8. A method of producing a semiconductor device, comprising producing a semiconductor device having a multilayer wiring structure by repeating the following steps:
Step (1): forming a metal wiring via an interlayer insulation film on a semiconductor substrate;
Step (2): subjecting the metal wiring forming surface of the semiconductor substrate to a flattening treatment; and
Step (3): cleaning the semiconductor substrate subjected to the flattening treatment by using a semiconductor substrate cleaning agent,
wherein the semiconductor substrate cleaning agent contains at least the following component (A) and component (B):
Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000; and
Component (B): water,
wherein the component (A) comprises at least one compound selected from the group consisting of a compound represented by the formula (a-1) and a compound represented by the formula (a-3):
R a1 O—(C 3 H 6 O 2 ) n —H  (a-1)

wherein R a1 denotes a hydrogen atom, a hydrocarbon group having 1 to 18 carbon atoms which may have a hydroxyl group, or an acyl group having 2 to 24 carbon atoms; and n denotes a mean degree of polymerization of the glycerol unit shown in the parentheses and is an integer of 2 to 60; and
(R a4 ) 3-s —N—[(R a5 O) n″ —H] s   (a-3)

wherein R a4 denotes an alkyl group having 1 to 20 carbon atoms; R a5 denotes an ethylene group or a propylene group; n″ denotes a mean degree of polymerization of the ethylene oxide unit or the propylene oxide unit shown in the round brackets and is an integer of 3 to 15; s denotes 1 or 2; and when s is 1, two R a4 may be identical or different, and when s is 2, the two groups in the square brackets may be identical or different.

9. A method of producing a semiconductor substrate cleaning agent, comprising mixing a composition containing at least the following component (A) and component (B):
Component (A): a water-soluble oligomer having a weight average molecular weight of not less than 100 and less than 10000; and
Component (B): water,
wherein the component (A) comprises at least one compound selected from the group consisting of a compound represented by the formula (a-1) and a compound represented by the formula (a-3):
R a1 O—(C 3 H 6 O 2 ) n —H  (a-1)

wherein R a1 denotes a hydrogen atom, a hydrocarbon group having 1 to 18 carbon atoms which may have a hydroxyl group, or an acyl group having 2 to 24 carbon atoms; and n denotes a mean degree of polymerization of the glycerol unit shown in the parentheses and is an integer of 10 to 60; and
(R

Assignees

• Daicel Corp

Inventors

• Sakanishi Yuichi

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• C11D17/0008

  aqueous liquid non soap compositions (C11D3/0015, C11D3/3947, C11D3/3956 take precedence) · CPC title

• C11D1/44

  Ethers of polyoxyalkylenes with amino alcohols; Condensation products of epoxyalkanes with amines · CPC title