Composition and method for removing residue from chemical-mechanical planarization substrate

Patent metadata

Field	Value
Publication number	US-2018166273-A1
Application number	US-201715825305-A
Country	US
Kind code	A1
Filing date	Nov 29, 2017
Priority date	Dec 14, 2016
Publication date	Jun 14, 2018
Grant date	—

Abstract

Described is a post-CMP cleaning solution and methods useful to remove residue from a CMP substrate or to prevent formation of residue on a surface of a CMP substrate.

First claim

1 . A method of removing residue from a CMP substrate, the method comprising:
(a) providing a CMP substrate, (b) providing a platen that includes a pad, (c) providing a cleaning solution comprising:
liquid carrier, and
cyclodextrin compound, and
(d) contacting the pad and the cleaning solution to a surface of the substrate, with motion, to remove the residue from the surface.

2 . The method of claim 1 wherein the cleaning solution comprises from 10 to 50,000 parts per million cyclodextrin compound based on total weight cleaning solution.

3 . The method of claim 1 wherein the cleaning solution consists essentially of water and cyclodextrin compound.

4 . The method of claim 1 wherein the cleaning solution consists essentially of water, cyclodextrin compound, and one or more chelant, pH adjuster, and biocide.

5 . The method of claim 1 wherein the cleaning solution contains substantially no abrasive particles.

6 . The method of claim 1 wherein the cleaning solution further contains a chelant.

7 . The method of claim 1 wherein the surface comprises residue selected from: organic material, and residue particles comprising a precipitated, agglomerated, or coagulated combination of organic material and inorganic material.

8 . The method of claim 1 wherein the residue comprises residue particles comprising organic material and metal-containing abrasive particles.

9 . The method of claim 8 wherein the abrasive particles are alumina particles.

10 . The method of claim 1 wherein the substrate comprises a surface layer comprising tungsten, copper, or cobalt.

11 . A cleaning solution for processing a post-CMP substrate, the solution comprising:
liquid carrier, and from 10 to 50,000 parts per million based on total weight cleaning solution of a cyclodextrin compound.

12 . The cleaning solution of claim 11 consisting essentially of water and cyclodextrin compound.

13 . The cleaning solution of claim 11 further comprising a chelant.

14 . The cleaning solution of claim 11 wherein the cleaning solution contains substantially no abrasive particles.

15 . The cleaning solution of claim 13 wherein the chelant is a carboxylic acid group-containing chelant.

16 . The cleaning solution of claim 13 wherein the chelant is a compound selected from malonic acid, maleic acid, a linear or branched C1-C6 carboxylic acid compound, phthalic acid, succinic acid, citric acid, tartaric acid, malic acid, gluconic acid, or a combination thereof.

17 . The cleaning solution of claim 13 wherein the chelant is a carboxylic acid group-containing polymer.

18 . A cleaning solution of claim 11 , wherein the solution contains substantially no surfactant.

Assignees

• Cabot Microelectronics Corp

Inventors

• Huang Helin
• Cui Ji

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P70/277 Primary

  the processing being a planarisation of conductive layers · CPC title

• C11D7/268

  Carbohydrates or derivatives thereof · CPC title

• C11D17/0013

  Liquid compositions with insoluble particles in suspension (C11D17/0021, C11D17/0026, C11D17/003 take precedence) · CPC title

• C11D3/0047

  pH regulated compositions · CPC title