Method and apparatus for monitoring chemical mechanical polishing process

Patent metadata

Field	Value
Publication number	US-11279001-B2
Application number	US-201916283554-A
Country	US
Kind code	B2
Filing date	Feb 22, 2019
Priority date	Feb 22, 2019
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

A method of monitoring a chemical mechanical polishing (CMP) apparatus including an arm configured to swing a polishing component includes performing a CMP process; learning at least two positions of the polishing component during a normal swing motion of the polish component by an optical acceptor and a processing unit to determine a plurality of expected positions of the polish component; analyzing at least one real position of the polishing component at predetermined time points during the CMP process by the optical acceptor and the processing unit; inspecting whether an abnormal event occurs based on the analyzed real position of the polishing component and the expected positions by the processing unit during the CMP process; and determining whether to send an alarm and stop the CMP process based on the inspecting result.

First claim

What is claimed is:

1. A method of monitoring a chemical mechanical polishing (CMP) apparatus, wherein the CMP apparatus comprises an arm configured to swing a polishing component, the method comprising:
performing a CMP process;
learning at least two positions of the polishing component during a normal swing motion of the polish component by an optical acceptor and a processing unit to determine a plurality of expected positions of the polish component;
analyzing at least one real position of the polishing component at predetermined time points during the CMP process by the optical acceptor and the processing unit;
inspecting whether an abnormal event occurs based on the analyzed real position of the polishing component and the expected positions by the processing unit during the CMP process; and
determining whether to send an alarm and stop the CMP process based on the inspecting result.

2. The method of claim 1 , wherein learning at least two positions of the polishing component further comprises:
acquiring a plurality of images of the CMP apparatus at each predetermined time points by the optical acceptor during a normal swing motion of the polish component; and
recognizing at least two positions of the polishing component from the images of the CMP apparatus by the processing unit.

3. The method of claim 2 , wherein acquiring images of the CMP apparatus is performed continuously when recognizing at least two positions of the polish component.

4. The method of claim 1 , wherein analyzing the positions of the polish component at predetermined time points further comprising:
acquiring an image of the CMP apparatus at one of the predetermined time points by the optical acceptor during the CMP process; and
recognizing a real position of the polish component from the image of the CMP apparatus acquired at the predetermined time point by the processing unit.

5. The method of claim 4 , wherein acquiring the image of the CMP apparatus is performed continuously when recognizing the real position of the polish component.

6. The method of claim 1 , wherein inspecting whether an abnormal event occurs further comprises:
comparing one of the analyzed positions of the polish component with one of the expected positions of the polish component learned.

7. The method of claim 1 , wherein inspecting whether an abnormal event occurs further comprises:
comparing two analyzed positions of the polish component.

8. The method of claim 1 , wherein inspecting whether an abnormal event occurs further comprises:
comparing one of the analyzed positions of the polish component with two of the learned expected positions of the polish component corresponding to an initial position and a final position of the swing motion.

9. A method of monitoring a chemical mechanical polishing (CMP) apparatus, wherein the CMP apparatus comprises an arm configured to swing a polishing component, the method comprising:
performing a CMP process;
learning a plurality of positions of the polishing component during a normal swing motion of the polish component by an optical acceptor and a processing unit to determine an expected velocity of the normal swing motion of the polish component;
analyzing a real velocity of the swing motion of the polishing component by the optical acceptor and the processing unit during the CMP process;
inspecting whether an abnormal event occurs based on the analyzed real velocity and the expected velocity of the swing motion of the polishing component by the processing unit during the CMP process; and
determining whether to send an alarm and stop the CMP process based on the inspecting result.

10. The method of claim 9 , wherein the polishing component corresponding to one of a wafer carrier, a slurry supply, a conditioning disk, or the combination thereof.

11. The method of claim 10 , wherein positions of each of the wafer carrier, the slurry supply, and the conditioning disk at a predetermined time point during the normal swing motion are determined simultaneously by the optical acceptor and the processing unit.

12. The method of claim 9 , further comprising:
storing data of the positions and the velocities of the polish component in a database for statistical analysis.

13. The method of claim 12 , further comprising:
determining a threshold of the velocity of the swing motion of the polish component based on the stored data.

14. The method of claim 13 , wherein inspecting whether an abnormal event occurs further comprises:
inspecting whether a deviation between the real velocity and the expected velocity of the swing motion of the polishing component exceeds the threshold.

15. A method, comprising:
performing a CMP process using a CMP apparatus;
swinging an arm of the CMP apparatus that is connected to a component of the CMP apparatus during the CMP process;
acquiring a plurality of images of the component of the CMP apparatus while swinging the arm of the CMP apparatus;
determining a plurality of real positions of the component of the CMP apparatus respectively based on the acquired images of the component of the CMP apparatus;
comparing the real positions of the component of the CMP apparatus with a plurality of expected positions, respectively;
determining whether an abnormal event occurs based on the comparing the real positions of the component of the CMP apparatus with the expected positions; and
stopping the CMP process when the abnormal event occurs.

16. The method of claim 15 , further comprising:
putting the arm of the CMP apparatus in a normal swing motion;
determining a plurality of positions of the component of the CMP apparatus during the normal swing motion; and
determining the expected positions respectively based on the determined positions of the component of the CMP apparatus during the normal swing motion.

17. The method of claim 16 , further comprising:
acquiring a plurality of images of the component of the CMP apparatus during the normal swing motion, wherein the positions of the component of the CMP apparatus during the normal swing motion are determined respectively based on the images of the component of the CMP apparatus acquired during the normal swing motion.

18. The method of claim 16 , wherein the positions of the component of the CMP apparatus during the normal swing motion is determined through pattern recognition.

19. The method of claim 15 , wherein comparing the real positions of the component of the CMP apparatus with the expected positions comprises:
determining deviations between the real positions and the expected positions, wherein stopping the CMP process is performed when at least one of the deviations between the real positions and the expected positions exceeds a threshold.

20. The method of claim 15 , wherein acquiring the images of the component of the CMP apparatus while swinging the arm of the CMP apparatus is performed by an optical acceptor above the component of the CMP apparatus.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Chung-Wei
• Jheng Ren-Hao

Classifications

• H10P90/123

  by grinding or lapping · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• B24B49/12 Primary

  involving optical means · CPC title