Concept for silicon carbide power devices

Patent metadata

Field	Value
Publication number	US-11276681-B2
Application number	US-201816647067-A
Country	US
Kind code	B2
Filing date	Sep 14, 2018
Priority date	Sep 15, 2017
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

A modular concept for Silicon Carbide power devices is disclosed where a low voltage module (LVM) is designed separately from a high voltage module (HVM). The LVM having a repeating structure in at least a first direction, the repeating structure repeats with a regular distance in at least the first direction, the HVM comprising a buried grid with a repeating structure in at least a second direction, the repeating structure repeats with a regular distance in at least the second direction, along any possible defined direction. Advantages include faster easier design and manufacture at a lower cost.

First claim

The invention claimed is:

1. A power device comprising a low voltage module (LVM) and a high voltage module (HVM);
the LVM having a first repeating structure in at least a first direction, the first repeating structure repeats with a first regular distance in at least the first direction;
the HVM comprising a doped buried grid with a second repeating structure in at least a second direction, the second repeating structure repeats with a second regular distance in at least the second direction;
the HVM and the LVM comprising doped SiC;
the HVM comprising:
a) a substrate having a first conductivity type,
b) an epitaxial drift layer as a first drift layer with a same or an opposite conductivity type as the substrate, wherein the epitaxial drift layer is applied on the substrate,
c) at least one epitaxial layer as a second drift layer, of the same conductivity type as the epitaxial drift layer,
d) a buried grid (BG) of the opposite conductivity type than the layers,
e) a feeder, with the same conductivity type as the buried grid, connected to the buried grid, and
f) an edge termination, formed in the same layer as the buried grid and the feeder, wherein the buried grid, the feeder, and the edge termination are applied in contact with the epitaxial drift layer and the layer above the epitaxial drift layer, wherein the at least one epitaxial layer is applied on the epitaxial drift layer, the buried grid, the feeder, and the edge termination;

the HVM comprises SiC without any added metal or insulating layers, the HVM has a blocking voltage U B HVM ; and
the LVM comprising:
a) a feeder contact, and
b) at least one low voltage device (LVD) having a blocking voltage U B LVD which is lower than the blocking voltage U B HVM of the HVM,
wherein the feeder contact of the LVM is in contact with the feeder of the HVM, and wherein the at least one epitaxial layer is a common layer for the HVM and the at least one LVD.

2. The power device according to claim 1 , wherein along any possible defined direction, a defined distance between the first repeating structures of the LVM is not the same as another defined distance between the second repeating structures of the HVM, the defined distances measured along the same defined direction.

3. The power device according to claim 1 , wherein the HVM comprises an epitaxial buffer layer with the same conductivity type as the epitaxial drift layer between the substrate and the epitaxial drift layer.

4. The power device according to claim 1 , comprising a common electrode between the feeder contact and a source ohmic contact.

5. The power device according to claim 1 , comprising a common electrode between the feeder contact and an emitter ohmic contact.

6. The power device according to claim 1 , comprising a common electrode between the feeder contact and a contact.

7. The power device according to claim 1 , wherein the LVM comprises at least two low voltage devices (LVDs).

8. The power device according to claim 7 , comprising a MOSFET switch and a Schottky diode in parallel as the at least two LVDs.

9. The power device according to claim 1 , wherein the epitaxial drift layer has a thickness in the range of 3 to 300 μm.

10. The power device according to claim 1 , wherein the epitaxial drift layer has a thickness in the range of 7 to 100 μm.

11. The power device according to claim 1 , wherein the epitaxial drift layer has a thickness in the range of 10 to 100 μm.

12. The power device according to claim 1 , wherein the buried grid has a doping concentration in the range of 3e17 cm −3 to 3e20 cm −3 , a space between adjacent members of the buried grid in the range of 1 to 5 μm, a thickness of the buried grid in the range of 0.5 to 2 μm, and a width of the members of the buried grid of more than 0.5 μm.

13. The power device according to claim 1 , wherein the buried grid has a width of members of the buried grid in the interval 0.5 to 2 μm.

14. The power device according to claim 1 , wherein the at least one epitaxial layer has a thickness of more than 0.3 μm, and a doping concentration in the range of 1e14 cm −3 to 1e17 cm −3 .

15. The power device according to claim 1 , wherein the at least one epitaxial layer has a thickness in the range of 1 to 1.5 μm.

16. The power device according to claim 1 , wherein the feeder has a width of at least 10 μm.

17. The power device according to claim 1 , wherein the feeder has a width of at least 50 μm.

18. The power device according to claim 1 , wherein at least one of the buried grid and the feeder is formed by epitaxially filled trenches.

19. The power device according to claim 1 , wherein the at least one LVD comprises areas shaped as hexagons.

20. The power device according to claim 1 , wherein the buried grid comprises a plurality of grids, wherein at least a part of the grids has a ledge positioned centered under the grid, the ledge positioned towards the substrate, the ledge having a smaller lateral dimension than the grid.

21. The power device according to claim 1 , wherein the buried grid comprises a plurality of grids; wherein each grid comprises an upper part and a lower part; wherein the lower part is towards the substrate; wherein the upper part is manufactured using epitaxial growth; and wherein the lower part is manufactured using ion implantation.

22. The power device according to claim 3 , wherein the epitaxial drift layer comprises a current spreading layer located between the buried grid and the epitaxial buffer layer.

23. The power device according to claim 1 , comprising at least one epitaxially grown region of the same conductivity type as the feeder and the buried grid and in contact with an ohmic contact; wherein the feeder comprises at least one region for each epitaxially grown region; wherein a projection of the epitaxially grown region in a plane parallel with the substrate has a boundary line limiting the projection of the epitaxially grown region; wherein the feeder layer is applied at least so that a projection of the feeder in a plane parallel to the substrate is in a surrounding of the boundary line, so that the distance from the boundary line to any point in the surrounding is maximum 0.5 μm; and wherein the feeder also is applied so that the distance from the lower part of the epitaxially grown region to the upper part of the feeder is in the range 0-5 μm, the direction up is given by the direction perpendicular away from the substrate.

24. The power device according to claim 1 , wherein the at least one epitaxial layer comprises at least two epitaxial layers of the same conductivity type as the epitaxial drift layer, each layer having different doping levels and thicknesses, and each layer acting either as a current spreading layer or a second drift layer.

25. A method of manufacturing a power device in SiC, the method comprising:
manufacturing a low voltage module (LVM) having a first repeating structure in at least a first direction, the first repeating structure repeating with a first regular distance in at least the first direction, the LVM comprising doped SiC and comprising: a) a feeder contact, and b) at least one low voltage device (LVD) having a blocking voltage U B LVD ; and
manufacturing a high voltage module (HVM) comprising a doped buried grid with a second repeating structure in at least a second direction, the second repeating structure repeating with a second regular distance in at least the second

Assignees

• Ii Vi Delaware Inc

Inventors

• Schöner Adolf
• Thierry-Jebali Nicolas
• Vieider Christian
• Reshanov Sergey
• Elahipanah Hossein
• Kaplan Wlodzimierz

Classifications

• H10D12/031

  of IGBTs · CPC title

• H10D62/106 Primary

  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D84/146

  the built-in components being Schottky barrier diodes · CPC title

• H10D84/035

  using silicon carbide [SiC] technology · CPC title