Cap oxidation for FinFET formation

Patent metadata

Field	Value
Publication number	US-11271097-B2
Application number	US-202017080519-A
Country	US
Kind code	B2
Filing date	Oct 26, 2020
Priority date	Nov 1, 2019
Publication date	Mar 8, 2022
Grant date	Mar 8, 2022

Abstract

Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

First claim

The invention claimed is:

1. A method of forming a semiconductor structure, the method comprising:
forming a silicon layer over a semiconductor substrate, wherein the semiconductor substrate comprises silicon germanium;
oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate;
removing the sacrificial oxide;
oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material; and
forming a high-k dielectric material overlying the oxygen-containing material.

2. The method of forming a semiconductor structure of claim 1 , wherein the removing includes an in-situ dry chemical process.

3. The method of forming a semiconductor structure of claim 2 , wherein the removing is performed in a first processing chamber, and wherein the method further comprises transferring the semiconductor substrate from the first processing chamber to a second processing chamber prior to forming the high-k dielectric material.

4. The method of forming a semiconductor structure of claim 1 , wherein the method is performed in one or more processing chambers without exposing the semiconductor substrate to atmosphere.

5. The method of forming a semiconductor structure of claim 1 , wherein the silicon layer is formed epitaxially over the silicon germanium.

6. The method of forming a semiconductor structure of claim 1 , wherein forming the sacrificial oxide comprises a first oxidation process, and wherein oxidizing the portion of the silicon layer in contact with the semiconductor substrate comprises a second oxidation process different from the first oxidation process.

7. The method of forming a semiconductor structure of claim 1 , wherein the oxidizing the portion of the silicon layer in contact with the semiconductor substrate comprises delivering a nitrogen-and-oxygen containing precursor to the semiconductor substrate.

8. The method of forming a semiconductor structure of claim 7 , wherein the oxidizing the portion of the silicon layer in contact with the semiconductor substrate occurs at a temperature of less than or about 750° C.

9. The method of forming a semiconductor structure of claim 1 , further comprising, prior to forming the high-k dielectric material, introducing reactive ligands on the oxygen-containing material with a nitrogen-containing precursor or an oxygen-containing precursor.

10. The method of forming a semiconductor structure of claim 9 , wherein the nitrogen-containing precursor comprises ammonia.

11. The method of forming a semiconductor structure of claim 1 , wherein the high-k dielectric material comprises at least one element selected from the group consisting of hafnium, zirconium, silicon, lanthanum, aluminum, titanium, and strontium.

12. A method of forming a semiconductor structure, the method comprising:
removing oxide from a surface of a substrate contained in a semiconductor processing chamber, wherein the substrate comprises a silicon germanium fin;
forming a silicon layer over the surface of the substrate;
oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the substrate;
removing the sacrificial oxide;
delivering nitrous oxide to the substrate to form an oxygen-containing material;
pre-treating the oxygen-containing material by contacting the substrate with a nitrogen-containing precursor; and
forming a high-k dielectric material overlying the pre-treated oxygen-containing material.

13. The method of forming a semiconductor structure of claim 12 , wherein the removing includes an in-situ dry chemical process.

14. The method of forming a semiconductor structure of claim 13 , wherein the removing is performed in a first processing chamber, and wherein the method further comprises transferring the substrate from the first processing chamber to a second processing chamber prior to forming the high-k dielectric material.

15. The method of forming a semiconductor structure of claim 12 , wherein forming the sacrificial oxide comprises delivering nitrous oxide to the substrate to form an oxygen-containing material.

16. The method of forming a semiconductor structure of claim 12 , wherein forming the sacrificial oxide comprises delivering an oxygen-containing precursor and a hydrogen-containing precursor to the substrate to form an oxygen-containing material.

17. The method of forming a semiconductor structure of claim 12 , wherein delivering nitrous oxide to the substrate to form an oxygen-containing material occurs at a temperature of less than or about 750° C.

18. The method of forming a semiconductor structure of claim 12 , wherein pre-treating the oxygen-containing material forms reactive ligands on the oxygen-containing material.

19. The method of forming a semiconductor structure of claim 12 , further comprising post-treating the high-k dielectric material.

20. A method of forming a semiconductor structure, the method comprising:
removing a native oxide from a surface of a substrate contained in a semiconductor processing chamber, wherein the substrate comprises silicon germanium;
forming a silicon layer over the surface of the substrate;
oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the substrate;
removing the sacrificial oxide;
oxidizing the portion of the silicon layer in contact with the substrate to form an oxygen-containing material; and
forming a high-k dielectric material overlying the oxygen-containing material.

Assignees

• Applied Materials Inc

Inventors

• Hung Steven C
• Colombeau Benjamin
• Dube Abhishek
• Kung Sheng-Chin
• Liu Patricia M
• Bevan Malcolm J
• Swenberg Johanes

Classifications

• H10P14/6308

  of Group IV semiconductors · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6309 Primary

  of silicon in uncombined form, i.e. pure silicon · CPC title

• H10D30/024 Primary

  of fin field-effect transistors [FinFET] · CPC title