Analyzing an operation of a power semiconductor device

Patent metadata

Field	Value
Publication number	US-11262248-B2
Application number	US-201917276896-A
Country	US
Kind code	B2
Filing date	Sep 19, 2019
Priority date	Sep 21, 2018
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the power semiconductor device and a set of corresponding reference currents; measuring an on-state voltage and a corresponding on-state current of the power semiconductor device to obtain a measurement point; adapting the set of reference voltages by adapting two of the set of reference voltages lying closest to the measurement point by extrapolating the measurement point; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device. The extrapolation is based on a predefined reference increment current and a predefined reference increment voltage.

First claim

The invention claimed is:

1. A method for analyzing an operation of a power semiconductor device, the method comprising:
providing a set of initial reference voltages of the power semiconductor device and a set of corresponding initial reference currents;
measuring an on-state voltage and a corresponding on-state current of the power semiconductor device, and correlating the on-state voltage to the on-state current so as to obtain a measurement point;
adapting the set of initial reference voltages using two of the set of initial reference voltages lying closest to the measurement point so as to obtain an adapted set of reference voltages by extrapolating the measurement point, wherein the extrapolation is based on a predefined reference increment current and a predefined reference increment voltage; and
using the adapted set of reference voltages to analyze the operation of the power semiconductor device.

2. The method according to claim 1 , wherein the analyzing comprises estimating a junction temperature of the power semiconductor device based on the adapted set of reference voltages.

3. The method according to claim 1 , wherein the extrapolation comprises:
determining a difference between the measured on-state current and one of the two of the set of initial reference currents lying closest to the measured on-state current; and
determining a ratio of the determined difference to the reference increment current.

4. The method according to claim 3 , wherein the extrapolation further comprises adapting the two of the set of initial reference voltages lying closest to the measurement point based on the determined ratio.

5. The method according to claim 1 , wherein
the steps of providing the set of initial reference voltages and the set of initial reference currents, obtaining the measurement point and adapting the set of initial reference voltages are performed N times within a predetermined time-interval, resulting in N adapted sets of reference voltages, wherein N is an integer number equal to or greater than 2; and
wherein the analyzing comprises determining a set of average voltages based on the N adapted sets of reference voltages.

6. The method according to claim 5 , wherein the determining of the set of average voltages comprises determining at least one weighted time average over N corresponding reference voltages of the N adapted sets of reference voltages.

7. The method according to claim 6 , wherein respective weighting factors for the weighted time averages are given by the N sets of validity factors.

8. The method according to claim 5 , wherein the step of estimating the junction temperature comprises:
determining for each voltage of each of the N adapted sets of reference voltages a validity factor resulting in N sets of validity factors;
wherein the validity factor for an adapted reference voltage is given by a relative distance between the respective measured on-state current and one of the reference currents corresponding to the adapted reference voltage.

9. The method according to claim 8 , wherein the step of estimating the junction temperature comprises determining a set of average validity factors based on the N sets of validity factors and estimating the junction temperature based on the set of average validity factors.

10. The method according to claim 9 , wherein the determining of the set of average validity factors comprises determining respective time averages over corresponding validity factors of the N sets of validity factors.

11. The method according to claim 9 , wherein the step estimating the junction temperature comprises calculating an estimated value for the junction temperature based on an assumed linear relation between the estimated value for the junction temperature and one of the set of average voltages.

12. The method according to claim 9 , wherein the step of estimating the junction temperature comprises:
calculating a plurality of estimated values for the junction temperature based on respective assumed linear relations between each estimated value for the junction temperature and a respective one of the set of average voltages;
weighting each of the plurality of estimated junction temperatures according to a respective average validity of the set of average validities.

13. The method according to claim 5 , wherein the analyzing comprises estimating a junction temperature of the device based on the set of average voltages.

14. A circuit for analyzing an operation of a power semiconductor device, the circuit comprising:
a measuring unit configured to measure an on-state voltage and an on-state current of the power semiconductor device to obtain a measurement point; and
a storage configured to store:
a set of initial reference voltages of the power semiconductor device and a set of corresponding initial reference currents of the power semiconductor device; and
a predefined reference increment current for each pair of adjacent initial reference currents and a predefined reference increment voltage for each pair of adjacent initial reference voltages; and
an evaluator configured to:
adapt the set of initial reference voltages using those two of the set of initial reference voltages lying closest to the measurement point to an adapted set of reference voltages by extrapolating the measurement point, wherein the extrapolation is based on the respective reference increment current and the respective reference increment voltage; and
analyze the operation of the power semiconductor device based on the adapted set of reference voltages.

15. A power electronic system comprising the circuit according to claim 14 and the power semiconductor device.

16. The power electronic system according to claim 15 comprising a power converter, the power converter comprising the power semiconductor device.

Assignees

• Reinhausen Maschf Scheubeck

Inventors

• Bryant Angus

Classifications

• G01R31/2628

  for measuring thermal properties thereof · CPC title

• G01R31/2879 Primary

  related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads · CPC title

• G01K7/015 Primary

  using microstructures, e.g. made of silicon · CPC title

• G01R31/2619

  for measuring thermal properties thereof · CPC title

• G01R31/263

  for testing thyristors · CPC title