Fluidized bed atomic layer deposition device for manufacturing nanocoating particles
US-2016258059-A1 · Sep 8, 2016 · US
US11261526B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11261526-B2 |
| Application number | US-201616331738-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2016 |
| Priority date | Sep 16, 2016 |
| Publication date | Mar 1, 2022 |
| Grant date | Mar 1, 2022 |
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An atomic layer deposition (ALD) method in an ALD reactor including a reaction chamber housing a substrate vessel, and an isolated vibration source outside of the reaction chamber or isolated within the reaction chamber. Particulate material within the substrate vessel is coated by self-saturating surface reactions using a top-to-bottom precursor flow passing through the substrate vessel, and movements are caused in the particulate material within the substrate vessel by the isolated vibration source while coating the particulate material.
Opening claim text (preview).
The invention claimed is: 1. A deposition method comprising: providing a deposition reactor with a substrate vessel in a reaction chamber; providing an isolated vibration source outside of the reaction chamber, and conveying ultrasonic vibrations from the isolated vibration source to the substrate vessel via a waveguide element positioned in a foreline connected to the reaction chamber; coating particulate material within the substrate vessel by self-saturating surface reactions using a top-to-bottom precursor flow passing through the substrate vessel; and causing movements in the particulate material within the substrate vessel by the isolated vibration source while coating the particulate material. 2. The method of claim 1 , wherein the top-to-bottom precursor flow passes through the substrate vessel throughout the volume of the substrate vessel. 3. The method of claim 1 , comprising: using the substrate vessel the volume of which is without transverse structures with regard to said top-to-bottom precursor flow. 4. The method of claim 1 , wherein the isolated vibration source is provided with elastic or contactless isolation from reaction chamber walls. 5. The method of claim 1 , comprising: transferring vibration from the vibration source via waveguide to the particulate material. 6. The method of claim 1 , comprising: causing movements in the particulate material by inducing vibration from the vibration source via wireless induction. 7. The method of claim 1 , wherein the substrate vessel is elastically isolated from the reaction chamber wall. 8. The method of claim 1 , wherein the vibration source generates ultrasonic vibration. 9. The method of claim 1 , wherein the vibration source is elastically isolated from the foreline. 10. A deposition reactor, comprising: a reaction chamber housing a substrate vessel; and an isolated vibration source outside of the reaction chamber, the reactor being configured to convey ultrasonic vibrations from the isolated vibration source to the substrate vessel via a waveguide element positioned in a foreline connected to the reaction chamber, the deposition reactor being configured to coat particulate material within the substrate vessel by self-saturating surface reactions using a top-to-bottom precursor flow passing through the substrate vessel and to cause movements in the particulate material within the substrate vessel by the isolated vibration source while coating the particulate material. 11. The deposition reactor of claim 10 , wherein the substrate vessel is configured to pass the top-to-bottom precursor flow throughout the volume of the substrate vessel. 12. The deposition reactor of claim 10 , wherein the volume defined by the substrate vessel is gas permeable without transverse structures. 13. The deposition reactor of claim 10 , wherein the reactor comprises elastic or contactless isolation that isolates the vibration source from the reaction chamber. 14. The deposition reactor of claim 10 , wherein the waveguide element is configured to transfer vibration from the vibration source to the particulate material. 15. The deposition reactor of claim 10 , wherein the vibration source is configured to cause movements in the particulate material by inducing vibration via wireless induction. 16. The deposition reactor of claim 10 , wherein the substrate vessel is elastically isolated from the reaction chamber wall. 17. The deposition reactor of claim 10 , wherein the vibration source is configured to generate ultrasonic vibration. 18. The deposition reactor of claim 10 , wherein the vibration source is elastically isolated from the foreline.
applied in non-semiconductor technology · CPC title
Methods specially adapted for coating powder · CPC title
characterized by the apparatus · CPC title
Apparatus specially adapted for continuous coating · CPC title
using fluidised bed process · CPC title
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