Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Patent metadata

Field	Value
Publication number	US-11239252-B2
Application number	US-202016907967-A
Country	US
Kind code	B2
Filing date	Jun 22, 2020
Priority date	Apr 19, 2016
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.

First claim

We claim:

1. An integrated structure, comprising:
a vertically-stack comprising conductive levels alternating with dielectric levels;
vertically-stacked NAND memory cells along the conductive levels within a memory array region;
a silicon nitride material over the memory array region, the material being separated by an uppermost of the conductive levels by an intervening insulative material; the silicon nitride material comprising silicon, nitrogen, and one or more substances selected from the group consisting of carbon, oxygen, boron and phosphorus;
a first opening within the memory array region extending through the silicon nitride material over the memory array region and through at least some of the vertically-stacked conductive levels;
a channel material within the first opening; and
a second opening spaced from the first opening by regions of the stack, the second opening having sidewalls comprising the silicon nitride material, the insulative material, conductive material of the conductive levels and dielectric material of the dielectric levels, the second opening subdividing the memory array region into programmable blocks.

2. The integrated structure of claim 1 wherein said total concentration of the one or more substances is within a range of from about 6 atomic percent to about 11 atomic percent.

3. The integrated structure of claim 1 wherein said one or more substances include carbon.

4. The integrated structure of claim 1 wherein said one or more substances include oxygen.

5. The integrated structure of claim 1 wherein said one or more substances include boron.

6. The integrated structure of claim 1 wherein said one or more substances include phosphorus.

Assignees

• Micron Technology Inc

Inventors

• Dorhout Justin B
• Wang Fei
• Carter Chet E
• Laboriante Ian
• Hopkins John D
• Shrotri Kunal
• Meyer Ryan
• Shamanna Vinayak
• Parekh Kunal R
• Roberts Martin C
• Park Matthew

Classifications

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H01L27/1157

  Electricity · mapped topic

• H01L23/528

  Electricity · mapped topic

• H01L27/11582 Primary

  Electricity · mapped topic