Method for treating substrate, method for manufacturing semiconductor device, and kit for treating substrate

Patent metadata

Field	Value
Publication number	US-11239093-B2
Application number	US-202016939163-A
Country	US
Kind code	B2
Filing date	Jul 27, 2020
Priority date	Feb 5, 2018
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate. The method for treating a substrate according to an embodiment of the present invention includes a step A of removing a transition metal-containing substance on a substrate by using a chemical solution, which includes a cerium compound and one or more pH adjusters selected from the group consisting of nitric acid, perchloric acid, ammonia, and sulfuric acid, for the substrate having the transition metal-containing substance, and a step B of performing a rinsing treatment on the substrate obtained by the step A by using one or more rinsing solutions selected from the group consisting of a solution including hydrogen peroxide and an acidic aqueous solution which is other than hydrofluoric acid, nitric acid, an aqueous perchloric acid solution, an aqueous oxalic acid solution, and a mixed aqueous solution of these and does not include hydrogen peroxide after the step A.

First claim

What is claimed is:

1. A method for treating a substrate, comprising:
a step A of removing a transition metal-containing substance on a substrate by using a chemical solution, which includes a cerium compound and one or more pH adjusters selected from the group consisting of nitric acid, perchloric acid, ammonia, and sulfuric acid,
for the substrate having the transition metal-containing substance; and
a step B of performing a rinsing treatment on the substrate obtained by the step A by using one or more rinsing solutions selected from the group consisting of aqueous hydrogen peroxide, a mixed solution of hydrofluoric acid and aqueous hydrogen peroxide, a mixed solution of sulfuric acid and aqueous hydrogen peroxide, a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, a mixed solution of hydrochloric acid and aqueous hydrogen peroxide, sulfuric acid, phosphoric acid, aqueous carbon dioxide, aqueous ozone, aqueous hydrogen, an aqueous citric acid solution, an aqueous periodic acid solution, and an aqueous hypochlorous acid solution.

2. The method for treating a substrate according to claim 1 ,
wherein the cerium compound is one or more compounds selected from the group consisting of cerium nitrate salts and cerium sulfate salts.

3. The method for treating a substrate according to claim 1 ,
wherein the cerium compound is one or more compounds selected from the group consisting of ammonium cerium (IV) nitrate and ammonium cerium (IV) sulfate.

4. The method for treating a substrate according to claim 1 ,
wherein the cerium compound is ammonium cerium (IV) nitrate.

5. The method for treating a substrate according to claim 1 ,
wherein the pH of the chemical solution is −1.0 to 4.0.

6. The method for treating a substrate according to claim 1 ,
wherein the content of the cerium compound is equal to or greater than 5% by mass with respect to the total mass of the chemical solution.

7. The method for treating a substrate according to claim 1 ,
wherein the content of the cerium compound is equal to or smaller than 30% by mass with respect to the total mass of the chemical solution.

8. The method for treating a substrate according to claim 1 ,
wherein the pH adjuster includes nitric acid.

9. The method for treating a substrate according to claim 8 ,
wherein the content of the nitric acid is equal to or greater than 1% by mass with respect to the total mass of the chemical solution.

10. The method for treating a substrate according to claim 8 ,
wherein the content of the nitric acid is equal to or smaller than 30% by mass with respect to the total mass of the chemical solution.

11. The method for treating a substrate according to claim 1 ,
wherein the temperature of the chemical solution is equal to or higher than 35° C.

12. The method for treating a substrate according to claim 1 ,
wherein the temperature of the chemical solution is equal to or lower than 60° C.

13. The method for treating a substrate according to claim 1 ,
wherein the rinsing solution is a mixed solution of sulfuric acid and aqueous hydrogen peroxide that has a temperature of 90° C. to 250° C., or
one or more solutions that are selected from the group consisting of aqueous hydrogen peroxide, a mixed solution of hydrofluoric acid and aqueous hydrogen peroxide, a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, a mixed solution of hydrochloric acid and aqueous hydrogen peroxide, sulfuric acid, phosphoric acid, aqueous carbon dioxide, aqueous ozone, aqueous hydrogen, an aqueous citric acid solution, an aqueous periodic acid solution, and an aqueous hypochlorous acid solution and have a temperature of 15° C. to 70° C.

14. The method for treating a substrate according to claim 1 ,
wherein the transition metal-containing substance includes at least one metal selected from the group consisting of Ru, Ti, Ta, Co, Cr, Hf, Os, Pt, Ni, Mn, Cu, Zr, Mo, La, W, and Ir.

15. The method for treating a substrate according to claim 14 ,
wherein the transition metal-containing substance includes a Ru-containing substance.

16. The method for treating a substrate according to claim 1 ,
wherein the step A is a step A1 of performing a recess etching treatment on transition metal-containing wiring disposed on a substrate by using the chemical solution, a step A2 of removing a transition metal-containing film at an outer edge portion of a substrate, on which the transition metal-containing film is disposed, by using the chemical solution, a step A3 of removing a transition metal-containing substance attached to a back surface of a substrate, on which a transition metal-containing film is disposed, by using the chemical solution, a step A4 of removing a transition metal-containing substance on a substrate, which has undergone dry etching, by using the chemical solution, or a step A5 of removing a transition metal-containing substance on a substrate, which has undergone a chemical mechanical polishing treatment, by using the chemical solution.

17. The method for treating a substrate according to claim 16 that has the step A1 as the step A, further comprising:
a step Ab of treating the substrate obtained by the step A1 by using a solution selected from the group consisting of a mixed solution of hydrofluoric acid and aqueous hydrogen peroxide, a mixed solution of sulfuric acid and aqueous hydrogen peroxide, a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, and a mixed solution of hydrochloric acid and aqueous hydrogen peroxide after the step A1.

18. The method for treating a substrate according to claim 17 ,
wherein the step A1 and the step Ab are alternately repeated.

19. A method for manufacturing a semiconductor device, comprising:
the method for treating a substrate according to claim 1 .

20. The method for treating a substrate according to claim 1 ,
wherein the transition metal-containing substance includes at least one metal selected from the group consisting of Ru, Ti, Ta, Co, Hf, Os, Pt, Ni, Mn, Cu, Zr, Mo, La, W, and Ir.

21. A method for treating a substrate, comprising:
a step A of removing a transition metal-containing substance on a substrate by using a chemical solution, which includes a cerium compound and one or more pH adjusters selected from the group consisting of nitric acid, perchloric acid, ammonia, and sulfuric acid,
for the substrate having the transition metal-containing substance; and
a step B of performing a rinsing treatment on the substrate obtained by the step A by using one or more rinsing solutions selected from the group consisting of a solution including hydrogen peroxide and an acidic aqueous solution which is other than hydrofluoric acid, nitric acid, an aqueous perchloric acid solution, an aqueous oxalic acid solution, and a mixed aqueous solution of these and does not include hydrogen peroxide, and
wherein the transition metal-containing substance includes at least one metal selected from the group consisting of Ru, Ti, Ta, Co, Hf, Os, Pt, Ni, Mn, Cu, Zr, Mo, La, W, and Ir.

22. The method for treating a substrate according to claim 21 ,
wherein the transition metal-containing substance includes at least one metal selected from the group consisting of Ru and Os.

Assignees

• Fujifilm Corp

Inventors

• Takahashi Tomonori
• Sugimura Nobuaki
• Seki Hiroyuki

Classifications

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• H10P70/56

  Cleaning of wafer backside · CPC title

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title