Methods and systems to enhance process uniformity

Patent metadata

Field	Value
Publication number	US-11239061-B2
Application number	US-201715581446-A
Country	US
Kind code	B2
Filing date	Apr 28, 2017
Priority date	Nov 26, 2014
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

First claim

The invention claimed is:

1. A semiconductor processing chamber comprising:
a support pedestal;
a remote plasma region; and
a processing region fluidly coupled with the remote plasma region, wherein:
the processing region is configured to house a substrate on the support pedestal,
the support pedestal comprises a first material at an interior region of the support pedestal,

the support pedestal defines at least one recessed ledge, and
the support pedestal comprises an annular member coupled with a distal portion of the support pedestal, wherein the annular member comprises the first material plated with a second material, wherein the first material comprises aluminum, and wherein the second material is not disposed on surfaces of the annular member in contact with the support pedestal.

2. The semiconductor processing chamber of claim 1 , wherein the recessed ledge is defined in a top surface of the support pedestal.

3. The semiconductor processing chamber of claim 1 , wherein the annular member extends along an external edge of the support pedestal towards a stem region of the support pedestal.

4. The semiconductor processing chamber of claim 1 , wherein the support pedestal comprises an upper surface, and wherein the annular member extends vertically above the upper surface of the support pedestal.

5. The semiconductor processing chamber of claim 1 , wherein the annular member is coupled with the support pedestal at an edge region beyond outer dimensions of a centrally located substrate region.

6. The semiconductor processing chamber of claim 1 , wherein fluorine has a higher affinity to the second material than the first material.

7. The semiconductor processing chamber of claim 6 , wherein the second material comprises nickel or platinum.

8. The semiconductor processing chamber of claim 7 , wherein the second material comprises nickel.

9. The semiconductor processing chamber of claim 1 , wherein the processing region is at least partially defined by a sidewall and wherein the sidewall comprises the second material.

10. The semiconductor processing chamber of claim 1 , wherein a sidewall heating element is embedded in a chamber sidewall proximate a showerhead.

11. The semiconductor processing chamber of claim 10 , wherein the support pedestal further comprises a pedestal temperature control.

12. The semiconductor processing chamber of claim 11 , wherein the pedestal temperature control is configured to maintain the support pedestal at a first temperature, wherein the sidewall heating element is configured to maintain the annular member at a second temperature, and wherein the second temperature is greater than the first temperature.

13. A semiconductor processing chamber comprising:
a remote plasma region; and
a processing region fluidly coupled with the remote plasma region, wherein:
the processing region is at least partially defined by each of a showerhead, a substrate support pedestal comprising a first material, and a sidewall,
the support pedestal comprises a temperature control and an annular member coupled with a distal portion of the support pedestal,
the sidewall includes a liner on an interior chamber surface comprising a second material different from the first material,
a resistive heater is embedded in the sidewall,
the pedestal temperature control is configured to maintain the support pedestal at a first temperature, and
the resistive heater is configured to maintain the annular member at a second temperature greater than the first temperature while the pedestal temperature control maintains the support pedestal at the first temperature.

14. The semiconductor processing chamber of claim 13 , wherein the support pedestal comprises a platform coupled with a stem, and wherein the liner is disposed on the sidewall from the showerhead to a distance proximate an intersection between the coupled platform and stem.

15. The semiconductor processing chamber of claim 13 , wherein the pedestal temperature control is configured to maintain a substrate temperature at least 20° C. below a sidewall temperature maintained by the resistive heater.

16. The semiconductor processing chamber of claim 13 , wherein the resistive heater is located within the sidewall proximate the showerhead.

17. The semiconductor processing chamber of claim 13 , wherein the liner is positioned along the sidewall adjacent the showerhead.

18. The semiconductor processing chamber of claim 17 , wherein the liner contacts the showerhead.

19. The semiconductor processing chamber of claim 13 , wherein the first material is aluminum, and wherein the second material is nickel.

20. The semiconductor processing chamber of claim 13 , wherein the liner is formed of a conductive material.

Assignees

• Applied Materials Inc

Inventors

• Singh Saravjeet
• Tso Alan
• Zhang Jingchun
• Li Zihui
• Zhang Hanshen
• Lubomirsky Dmitry

Classifications

• H10P72/0421 Primary

  for drying etching · CPC title

• H01J37/32357 Primary

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/32522

  Temperature · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/32715

  Workpiece holder · CPC title