Method for photoluminescence measurement of a sample

Patent metadata

Field	Value
Publication number	US-11237110-B2
Application number	US-201816764985-A
Country	US
Kind code	B2
Filing date	Nov 20, 2018
Priority date	Nov 21, 2017
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

A method for photoluminescence measurement of a sample that includes a front face and a rear face linked by a contour, the sample resting, via the rear face of same, on a receiving face of an active base. The sample also includes a first region partially delimited by the contour and that emits a photoluminescence signal of an intensity, referred to as the first intensity, that is lower at any point to the average intensity of the photoluminescence signal of the sample, referred to as the reference intensity, the active base emitting a photoluminescence signal of an intensity, referred to as the secondary intensity, that is at least equal to the reference intensity. The active base includes an edge that is set apart from the contour by an overlap distance and that delimits, with said contour, a peripheral section of the active base.

First claim

The invention claimed is:

1. A method for photoluminescence measurement of a sample which comprises a front face and a rear face, connected by a contour, the sample bearing on an accommodating face of an active base plate at the rear face,
the sample comprises at least one first region partly delimited by the contour and which emits a photoluminescence signal with a first intensity, at any point lower than a mean intensity of the photoluminescence signal of the sample called a reference intensity,
the active base plate emitting a photoluminescence signal with a second intensity at least equal to the reference intensity, the active base plate further comprises an edge at a distance, according to a projection distance, from the contour, and delimiting a peripheral section of the active base plate with said contour.

2. The method according to claim 1 , wherein the first region comprises a defect density higher than a mean defect density of the sample.

3. The method according to claim 1 , wherein the at least one first region extends over the entire circumference of the sample.

4. The method according to claim 1 , wherein the sample is a photovoltaic cell.

5. The method according to claim 1 , wherein the photoluminescence signal emitted by the sample and by the active base plate is collected by a detector.

6. The method according to claim 1 , wherein the projection distance, at least at the at least one first region, is adjusted such that a variation in the intensity of the photoluminescence signal between the peripheral section and the first region, reveals a singularity locating the contour of the sample at the first region.

7. The method according to claim 6 , wherein the singularity is a minimum of the photoluminescence signal intensity.

8. The method according to claim 1 , wherein the active base plate comprises a semiconductor material.

9. The method according to claim 8 , wherein the semiconductor material comprises silicon.

10. The method according to claim 1 , wherein the sample also comprises at least one second region, partly delimited by the contour and which emits a photoluminescence signal with a second intensity equal to the reference intensity on average, the measurement method implementing masking means intended to mask the photoluminescence signal emitted by a region of the peripheral section adjoining the second region.

11. The method according to claim 10 , wherein the masking means comprises an intermediate base plate interposed between the sample and the active base plate, the intermediate base plate comprising a masking region covering a region of the peripheral section adjoining the second region.

12. The method according to claim 1 , wherein a corona type charge is created on a second face of the active base plate opposite to the accommodating face, the corona type charge being intended to adjust the secondary intensity level.

13. The method according to claim 12 , wherein the corona type charge is created by an anode and a cathode disposed facing the accommodating face and the second face respectively.

14. The method according to claim 13 , wherein the anode comprises a grid interposed between the sample and the active base plate.

15. The method according to claim 1 , wherein the active base plate comprises a first passivation layer covering the accommodating face, the first passivation layer being intended to heal defects likely to be present on the accommodating face.

16. The method according to claim 15 , wherein the first passivation layer comprises a layer made of a dielectric material or of hydrogenated amorphous silicon.

17. The method according to claim 16 , wherein the dielectric material comprises at least one of the following elements chosen among: silicon dioxide, silicon nitride, and alumina.

18. The method according to claim 1 , wherein carrying out the process comprises exciting the sample and the peripheral section of the active base plate by a laser.

19. The method according to claim 18 , wherein the laser sweeps the front face and the accommodating face at the peripheral section.

20. The method according to claim 18 , wherein the laser has a size adapted to excite the sample and the active base plate simultaneously.

Assignees

• Commissariat Energie Atomique

Inventors

• Varache Renaud

Classifications

• G01N21/6489 Primary

  Photoluminescence of semiconductors · CPC title

• G01N21/6456

  Spatial resolved fluorescence measurements; Imaging · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• G01N2021/8461

  Investigating impurities in semiconductor, e.g. Silicon · CPC title

• G01N21/9503

  Wafer edge inspection · CPC title