Technique for detecting a defect in a multi-junction solar cell

US10199985B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10199985-B2
Application numberUS-201715434152-A
CountryUS
Kind codeB2
Filing dateFeb 16, 2017
Priority dateFeb 16, 2016
Publication dateFeb 5, 2019
Grant dateFeb 5, 2019

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A method for detecting a defect in a multi-junction solar cell is presented. The multi-junction solar cell comprises at least two vertically stacked p-n junctions. The method comprises exciting a first p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a first excitation wavelength range, detecting photoluminescence light emitted by photoluminescence of the first p-n junction, and generating a spatially resolved first photoluminescence image of the photoluminescence light emitted by the first p-n junction. Further, a computer program product and an apparatus for detecting a defect in a multi-junction solar cell are presented.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for detecting a defect in a multi-junction solar cell comprising at least two vertically stacked p-n junctions, the method comprising: exciting a first p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a first excitation wavelength range at a first illumination intensity that is constant over time; exciting a second p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a second excitation wavelength range at a second illumination intensity that changes over time; detecting photoluminescence light emitted by photoluminescence of the first p-n junction; and generating a plurality of spatially resolved photoluminescence image of the photoluminescence light emitted by the first p-n junction while the second illumination intensity is changed over time; and observing the generated plurality of photoluminescence images for regions in which the intensity changes over time. 2. The method of claim 1 , further comprising: observing the first image for spatial intensity variations. 3. The method of claim 2 , wherein observing the first image for spatial intensity variations comprises observing the first image for exponential intensity variations. 4. A method for detecting a defect in a multi junction solar cell comprising at least two vertically stacked p-n junctions, the method comprising: exciting a first p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a first excitation wavelength range; exciting a second p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a second excitation wavelength range; detecting photoluminescence light emitted by photoluminescence of the first p-n junction; generating the a spatially resolved photoluminescence image of photoluminescence light emitted by photoluminescence of the first p-n junction under excitation of the first p-n junction at a first illumination intensity and under excitation of the second p-n junction at a second illumination intensity; generating a second photoluminescence image of photoluminescence light emitted by photoluminescence of the first p-n junction under excitation of the first p-n junction at the first illumination intensity and under excitation of the second p-n junction at a third illumination intensity different from the second illumination intensity; combining the first photoluminescence image and the second photoluminescence image to a third photoluminescence image by using a mathematical operation; and observing the third photoluminescence image for spatial intensity variations. 5. The method of claim 4 , wherein the mathematical operation is a subtraction of intensity values of one of the first and second photoluminescence image from the other of the first and second photoluminescence image. 6. The method of claim 1 , wherein exciting the first p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a first excitation wavelength range is carried out at a first illumination intensity that is configured to create a photocurrent in the first p-n junction in a range of 1 to 100 mA/cm2. 7. The method of claim 6 , wherein the photocurrent created in the first p-n junction is in a range of 10 to 20 mA/cm2. 8. The method of claim 1 , wherein exciting the second p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a second excitation wavelength range is carried out at a second illumination intensity that is configured to create a photocurrent in the second p-n junction in a range of 1 to 100 mA/cm2. 9. The method of claim 8 , wherein the photocurrent created in the second p-n junction is in a range of 10 to 20 mA/cm2. 10. The method of claim 1 , wherein a center wavelength of the photoluminescence light emitted by photoluminescence of the first p-n junction is not included in the first excitation wavelength range. 11. The method of claim 1 , wherein a center wavelength of the photoluminescence light emitted by photoluminescence of the first p-n junction is not included in the first excitation wavelength range; a center wavelength of the photoluminescence light emitted by photoluminescence of the first p-n junction is not included in the second excitation wavelength range; and the first excitation wavelength range and the second excitation wavelength range do not overlap each other. 12. A computer program product stored on a computer-readable non-transitory storage device comprising program code portions for performing the steps of claim 1 when the computer program product is executed on a computing device. 13. An apparatus for detecting a defect in a multi-junction solar cell comprising at least two vertically stacked p-n junctions, the apparatus comprising: a first illumination unit configured to excite a first p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a first excitation wavelength range at a first illumination intensity that is constant over time; a second illumination unit configured to excite a second p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a second excitation wavelength range at a second illumination intensity that changes over time; a detecting unit configured to detect photoluminescence light emitted by photoluminescence of the first p-n junction; an image generating unit configured to generate a plurality of spatially resolved first photoluminescence image of the photoluminescence light emitted by the first p-n junction while the second illumination intensity is changed over time; and an observation unit for observing the generated plurality of photoluminescence images for regions in which the intensity changes over time. 14. An apparatus for detecting a defect in a multi junction solar cell comprising at least two vertically stacked p-n junctions, the apparatus comprising: a first illumination unit configured to excite a first p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a first excitation wavelength range; a second illumination unit configured to excite a second p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a second excitation wavelength range; a detecting unit configured to detect photoluminescence light emitted by photoluminescence of the first p-n junction; and an image generating unit is configured to generate a spatially resolved first photoluminescence image of photoluminescence light emitted by photoluminescence of the first p-n junction under excitation of the first p-n junction at a first illumination intensity and under excitation of the second p-n junction at a second illumination intensity and to generate a second photoluminescence image of photoluminescence light emitted by photoluminescence of the first p-n junction under excitation of the first p-n junction at the first illumination intensity and under excitation of the second p-n junction at a third illumination intensity different from the second illumination intensity; a combining unit configured to combine the first photoluminescence image and the second photoluminescence image to a third photoluminescence image by using a mathe

Assignees

Inventors

Classifications

  • Photoluminescence of semiconductors · CPC title

  • Creating or editing images; Combining images with text · CPC title

  • Specially adapted optical and illumination features · CPC title

  • Electricity · mapped topic

  • H02S50/15Primary

    using optical means, e.g. using electroluminescence · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10199985B2 cover?
A method for detecting a defect in a multi-junction solar cell is presented. The multi-junction solar cell comprises at least two vertically stacked p-n junctions. The method comprises exciting a first p-n junction of the at least two vertically stacked p-n junctions by illuminating the solar cell with excitation light in a first excitation wavelength range, detecting photoluminescence light em…
Who is the assignee on this patent?
Airbus Ds Gmbh
What technology area does this patent fall under?
Primary CPC classification H02S50/15. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 05 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).