Composition for etching, method for etching insulator and method for manufacturing semiconductor device, and novel compounds
US-2020377793-A1 · Dec 3, 2020 · US
US11236116B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11236116-B2 |
| Application number | US-202016839122-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 3, 2020 |
| Priority date | Apr 18, 2019 |
| Publication date | Feb 1, 2022 |
| Grant date | Feb 1, 2022 |
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The present disclosure relates to a silicon compound represented by Formula 1 below:wherein R1 to R6 are each independently selected from a hydrogen, a hydrocarbyl group and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y and Z are each independently selected from NR7, O, and S, where R7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR7, and A is an n-valent radical, where n is an integer of 1 to 6.
Opening claim text (preview).
What is claimed is: 1. A silicon compound represented by Formula 1 below: wherein: R 1 to R 6 are each independently selected from a hydrogen, a hydrocarbyl group, and a non-hydrocarbyl group, L is a direct bond or a C 2 -C 10 hydrocarbylene, X is oxygen (O) or sulfur (S), Y is NR 7 , O, or S, Z is NR 7 or O, where R 7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR 7 , and A is an n-valent radical, where n is an integer of 1 to 6. 2. The silicon compound of claim 1 , wherein R 1 to R 6 are all hydrogen. 3. The silicon compound of claim 1 , wherein L is C 2 -C 10 alkylene. 4. The silicon compound of claim 1 , wherein A is *—(CH 2 ) p R 11 , where p is an integer of 1 to 3, R 11 is hydrogen, halogen, a substituted or unsubstituted C 1 -C 20 alkyl group, a substituted or unsubstituted C 6 -C 20 aryl group, or a substituted or unsubstituted (C 1 -C 20 )alkyl(C 1 -C 20 )alkoxy group. 5. The silicon compound of claim 4 , wherein n is 1, and A is *—CH 3 , *—(CH 2 ) 2 OCH 3 , or *—CH 3 C 6 H 5 . 6. The silicon compound of claim 1 , wherein n is an integer of 2 to 6, and A is where q is an integer of 0 to 4. 7. The silicon compound of claim 6 , wherein n is an integer of 6, and A 8. The silicon compound of claim 1 , wherein the silicon compound is represented by one of the following structural formulae: 9. A silicon compound represented by Formula 1 below: wherein: R 1 to R 6 are each independently selected from a hydrogen, a hydrocarbyl group, and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y is NR 7 , O, or S, Z is NR 7 or O, where R 7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, Y and Z are not simultaneously NR 7 , n is 1 and A is *—CH 3 , *—(CH 2 ) 2 OCH 3 or *—CH 3 C 6 H 5 . 10. The silicon compound of claim 9 , wherein R 1 to R 6 are all hydrogen. 11. The silicon compound of claim 1 , wherein L is a C 1 -C 10 alkylene. 12. The silicon compound of claim 9 , wherein A is *—(CH 2 ) p R 11 , where p is an integer of 1 to 3, R 11 is hydrogen, halogen, a substituted or unsubstituted C 1 -C 20 alkyl group, a substituted or unsubstituted C 6 -C 20 aryl group, or a substituted or unsubstituted (C 1 -C 20 )alkyl(C 1 -C 20 )alkoxy group. 13. The silicon compound of claim 9 , wherein the silicon compound is represented by one of the following structural formulae: 14. A silicon compound represented by Formula 1 below: wherein: R 1 to R 6 are each independently selected from a hydrogen, a hydrocarbyl group, and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y is NR 7 , O, or S, Z is NR 7 or O, where R 7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR 7 , and A is an n-valent radical, where n is an integer of 2 to 6. 15. The silicon compound of claim 14 , wherein R 1 to R 6 are all hydrogen. 16. The silicon compound of claim 14 , wherein L is a C 1 -C 10 alkylene. 17. The silicon compound of claim 14 , wherein A is *—(CH 2 ) p R 11 , where p is an integer of 1 to 3, R 11 is hydrogen, halogen, a substituted or unsubstituted C 1 -C 20 alkyl group, a substituted or unsubstituted C 6 -C 20 aryl group, or a substituted or unsubstituted (C 1 -C 20 )alkyl(C 1 -C 20 )alkoxy group. 18. The silicon compound of claim 14 , wherein n is an integer of 2 to 6, and A is where q is an integer of 0 to 4. 19. The silicon compound of claim 18 , wherein n is an integer of 6, and A is 20. The silicon compound of claim 14 , wherein the silicon compound is represented by the following structural formula:
Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896) · CPC title
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