Method of removing liquid from seal of a substrate holder

US11230789B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11230789-B2
Application numberUS-201916685038-A
CountryUS
Kind codeB2
Filing dateNov 15, 2019
Priority dateDec 21, 2018
Publication dateJan 25, 2022
Grant dateJan 25, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A method capable of removing a liquid from a seal of a substrate holder so as to prevent contact between the liquid and an electrical contact of the substrate holder is provided. The method includes: immersing the substrate in a plating solution, with a seal and an electrical contact of the substrate holder in contact with the substrate; applying a voltage between the substrate and an anode in the presence of the plating solution to plate the substrate; pulling up the plated substrate from the plating solution; separating the seal from the plated substrate; and forming a flow of gas passing through a gap between the plated substrate and the seal, the flow of gas being directed from an inside to an outside of the substrate holder.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of plating a substrate with use of a substrate holder, comprising: immersing the substrate in a plating solution, with a seal and an electrical contact of the substrate holder in contact with the substrate; applying a voltage between the substrate and an anode in the plating solution to plate the substrate; pulling up the plated substrate from the plating solution; separating the seal from the plated substrate; and forming a flow of gas passing through a gap between the plated substrate and the seal, the flow of gas being directed from an inside to an outside of the substrate holder. 2. The method according to claim 1 , wherein forming the flow of gas passing through the gap comprises forming the flow of gas passing through the gap while keeping the gap within a predetermined range. 3. The method according to claim 2 , wherein forming the flow of gas passing through the gap comprises forming the flow of gas passing through the gap while keeping the gap constant. 4. The method according to claim 1 , wherein separating the seal from the plated substrate comprises separating the seal from the plated substrate when an internal space of the substrate is filled with the gas having a pressure higher than an atmospheric pressure, the internal space being formed by the seal in contact with the plated substrate. 5. A method of plating a substrate with use of a substrate holder, comprising: forming a flow of gas passing through a gap between the substrate to be plated and a seal of the substrate holder, the flow of gas being directed from an inside to an outside of the substrate holder; immersing the substrate in a plating solution, with the seal and an electrical contact of the substrate holder in contact with the substrate; and applying a voltage between the substrate and an anode in the plating solution to plate the substrate. 6. The method according to claim 5 , wherein forming the flow of gas passing through the gap comprises forming the flow of gas passing through the gap while keeping the gap within a predetermined range. 7. The method according to claim 6 , wherein forming the flow of gas passing through the gap comprises forming the flow of gas passing through the gap while keeping the gap constant. 8. The method according to claim 5 , further comprising: bringing the seal into contact with the substrate to form an internal space in the substrate holder after the flow of gas through the gas is formed; filling the internal space with a gas having a pressure higher than an atmospheric pressure; and detecting that an amount of decrease in pressure of the gas in the internal space during a predetermined monitoring time is smaller than a predetermined threshold value.

Assignees

Inventors

Classifications

  • Semiconductors first coated with a seed layer or a conductive layer · CPC title

  • C25D17/004Primary

    Sealing devices · CPC title

  • Process control or regulation (controlling or regulating in general G05) · CPC title

  • Agitating of electrolytes; Moving of racks · CPC title

  • C25D17/06Primary

    Suspending or supporting devices for articles to be coated · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11230789B2 cover?
A method capable of removing a liquid from a seal of a substrate holder so as to prevent contact between the liquid and an electrical contact of the substrate holder is provided. The method includes: immersing the substrate in a plating solution, with a seal and an electrical contact of the substrate holder in contact with the substrate; applying a voltage between the substrate and an anode in …
Who is the assignee on this patent?
Ebara Corp
What technology area does this patent fall under?
Primary CPC classification C25D17/004. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 25 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).