Cobalt chemistry for smooth topology

US11230778B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11230778-B2
Application numberUS-201916713871-A
CountryUS
Kind codeB2
Filing dateDec 13, 2019
Priority dateDec 13, 2019
Publication dateJan 25, 2022
Grant dateJan 25, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of electrodepositing cobalt onto a substrate comprising recessed features and non-feature areas, wherein the cobalt deposit exhibits a thickness difference across the surface of the substrate of less than about 200 nm the method comprising: a) receiving the substrate in an electroplating chamber; b) immersing the substrate into a cobalt electrolyte, the cobalt electrolyte comprising: (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, wherein the organic additive comprises a suppressor; and c) electroplating cobalt into the features and onto the non-feature areas for a period of time and under conditions to achieve a level, seam-free, bottom-up fill in the recessed features and plating on the non-feature areas; wherein the cobalt deposit exhibits a potentiodynamically measured hysteresis loop in a cyclic voltammetry scan at a current density in a range of 5 to about 10 mA/cm 2 of less than about 50 mV. 2. The method according to claim 1 , wherein the substrate has a cobalt seed layer disposed thereon and the cobalt is electrodeposited onto the cobalt seed layer. 3. The method according to claim 1 , wherein the electroplated cobalt deposit exhibits a thickness difference of less than about 100 nm. 4. The method according to claim 3 , wherein the electroplated cobalt deposit exhibits a thickness difference of less than about 75 nm. 5. The method according to claim 4 , wherein the electroplated cobalt deposit exhibits a thickness difference of less than about 50 nm. 6. The method according to claim 1 , wherein the potentiodynamically measured hysteresis loop in the cyclic voltammetry scan at the current density in the range of 5 to about 10 mA/cm 2 is less than about 30 mV. 7. The method according to claim 6 , wherein, the potentiodynamically measured hysteresis loop in the cyclic voltammetry scan at the current density in the range of 5 to about 10 mA/cm 2 is less than about 20 mV. 8. The method according to claim 7 , wherein the potentiodynamically measured hysteresis loop in the cyclic voltammetry scan at the current density in the range of 5 to about 10 mA/cm 2 is less than about 10 mV. 9. The method according to claim 1 , wherein the current density at which the hysteresis loop is measured is in a range of about 7.5 to about 8.5 mA/cm 2 . 10. The method according to claim 9 , wherein the current density at which the hysteresis loop is measured is about 8 mA/cm 2 . 11. The method according to claim 1 , wherein the plated cobalt deposit also exhibits a potentiodynamically measured hysteresis loop in a cyclic voltammetry scan at a current density in a range of about 1 to less than 5 mA/cm 2 of less than about 90 mV. 12. The method according to claim 11 , wherein the current density at which the hysteresis loop is measured is in a range of about 1.5 to about 2.5 mA/cm 2 . 13. The method according to claim 1 , wherein in the cyclic voltammetry scan, a forward scan represents non-feature area plating and a backward scan represents feature area plating of the cobalt deposit. 14. The method according to claim 1 , wherein the cobalt electrolyte is at least substantially free of an accelerator. 15. The method according to claim 1 , wherein the cobalt electrolyte is at least substantially free of a depolarizer. 16. The method according to claim 1 , wherein the organic additive comprises an acetylenic suppressor. 17. The method according to claim 16 , wherein the acetylenic suppressor comprises a reaction products of an alkoxylated propargyl alcohol or propargyl alcohol with glycidol, propylene oxide, glycidol and propylene oxide, or propylene glycol and glycidol. 18. The method according to claim 17 , wherein the alkoxylated propargyl alcohol is ethoxylated, propargyl alcohol. 19. The method according to claim 1 , wherein the recessed features are damascene features. 20. A method of electrodepositing cobalt onto a substrate comprising recessed features and non-feature areas, wherein the cobalt deposit exhibits a thickness difference across the surface of the substrate of less than about 200 nm the method comprising: a) receiving the substrate in an electroplating chamber; b) immersing the substrate into a cobalt electrolyte, the cobalt electrolyte comprising: (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, wherein the organic additive comprises a suppressor; and c) electroplating cobalt into the features and onto the non-feature areas for a period of time and under conditions to achieve a level, seam-free, bottom-up fill in the recessed features and plating on the non-feature areas; wherein the plated cobalt deposit exhibits a potentiodynamically measured hysteresis loop in a cyclic voltammetry scan at a current density in a range of about 1 to less than 5 mA/cm 2 of less than about 90 mV. 21. The method according to claim 20 , wherein the cobalt deposit also exhibits a potentiodynamically measured hysteresis loop in a cyclic voltammetry scan at a current density in a range of 5 to about 10 mA/cm 2 of less than about 50 mV.

Assignees

Inventors

Classifications

  • the principal metal being a transition metal · CPC title

  • based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

  • by filling conductive material into holes, grooves or trenches · CPC title

  • Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

  • including components having same physical characteristic in differing degree · CPC title

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What does patent US11230778B2 cover?
An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference …
Who is the assignee on this patent?
Macdermid Enthone Inc
What technology area does this patent fall under?
Primary CPC classification C25D5/611. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 25 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).