Amplifier having switch and switch control processor controlling switch

Patent metadata

Field	Value
Publication number	US-11227930-B2
Application number	US-202016750826-A
Country	US
Kind code	B2
Filing date	Jan 23, 2020
Priority date	Jan 24, 2019
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE).An amplifier is provided. The amplifier includes a first resistor electrically connected to the input terminal, a second resistor electrically connected to the output terminal, a switch including a metal-oxide-semiconductor field-effect transistor (MOSFET) and electrically connected to one end of the second resistor, and a switch control processor configured to electrically connect the gate terminal of the MOSFET constituting the switch and the bulk terminal of the MOSFET constituting the switch to an impedance having an impedance value higher than a preset first threshold.

First claim

What is claimed is:

1. An amplifier for amplifying an input signal, the amplifier comprising:
a first resistor electrically connected to an input terminal;
a second resistor electrically connected to an output terminal;
a switch including a complementary metal-oxide-semiconductor (CMOS) and electrically connected to one end of the second resistor; and
a switch control processor comprising a first impedance electrically connected to a gate terminal of a p-type metal-oxide-semiconductor (PMOS) constituting the switch and a bulk terminal of an n-type metal-oxide-semiconductor (NMOS) constituting the switch, and a second impedance electrically connected to a bulk terminal of the PMOS and a gate terminal of the NMOS,
wherein the first impedance and the second impedance correspond to an impedance value higher than a preset first threshold.

2. The amplifier of claim 1 ,
wherein the first impedance comprises a first register and a first inductor, and
wherein the second impedance comprises a second register and a second inductor.

3. The amplifier of claim 1 , wherein the switch control processor comprises:
a first inverter configured to receive a control signal;
a first CMOS in which a gate terminal of a first PMOS and a gate terminal of a first NMOS are electrically connected to an output terminal of the first inverter;
a second inverter electrically connected to the output terminal of the first inverter;
a second CMOS in which a gate terminal of a second PMOS and a gate terminal of a second NMOS are electrically connected to an output terminal of the second inverter;
a first impedance electrically connected to a source terminal of the first PMOS and a source terminal of the second PMOS and having an impedance value higher than the first threshold; and
a second impedance electrically connected to a source terminal of the first NMOS and a source terminal of the second NMOS and having an impedance value higher than the first threshold.

4. The amplifier of claim 3 ,
wherein the bulk terminal of the PMOS constituting the CMOS is electrically connected to the source terminal of the first PMOS or the source terminal of the second PMOS, and
wherein the bulk terminal of the NMOS constituting the CMOS is electrically connected to the source terminal of the first NMOS or the source terminal of the second NMOS.

5. The amplifier of claim 3 ,
wherein the gate terminal of the PMOS constituting the CMOS is electrically connected to an output terminal of the first CMOS, and
wherein the gate terminal of the NMOS constituting the CMOS is electrically connected to an output terminal of the second CMOS.

6. The amplifier of claim 1 , wherein the switch comprises:
a first switch including a first CMOS and electrically connected to one end of the second resistor; and
a second switch including a second CMOS and electrically connected to one end of the first switch.

7. The amplifier of claim 6 , wherein the switch control processor comprises:
a first inverter configured to receive a control signal;
a first CMOS in which a gate terminal of a first PMOS and a gate terminal of a first NMOS are electrically connected to an output terminal of the first inverter;
a second inverter electrically connected to the output terminal of the first inverter;
a second CMOS in which a gate terminal of a second PMOS and a gate terminal of a second NMOS are electrically connected to an output terminal of the second inverter;
a first impedance electrically connected to a source terminal of the first PMOS and a source terminal of the second PMOS and having an impedance value higher than the first threshold;
a second impedance electrically connected to a source terminal of the first NMOS and a source terminal of the second NMOS and having an impedance value higher than the first threshold;
a third CMOS in which a gate terminal of a third PMOS and a gate terminal of a third NMOS are electrically connected to the output terminal of the first inverter;
a fourth CMOS in which a gate terminal of a fourth PMOS and a gate terminal of a fourth NMOS are electrically connected to the output terminal of the second inverter;
a third impedance electrically connected to a source terminal of the third PMOS and a source terminal of the fourth PMOS and having an impedance value higher than the first threshold; and
a fourth impedance electrically connected to a source terminal of the third NMOS and a source terminal of the fourth NMOS and having an impedance value higher than the first threshold.

8. The amplifier of claim 7 ,
wherein a bulk terminal of a PMOS constituting the first switch is electrically connected to the source terminal of the first PMOS or the source terminal of the second PMOS,
wherein a bulk terminal of an NMOS constituting the first switch is electrically connected to the source terminal of the first NMOS or the source terminal of the second NMOS,
wherein a bulk terminal of a PMOS constituting the second switch is electrically connected to the source terminal of the third PMOS or the source terminal of the fourth PMOS, and
wherein a bulk terminal of an NMOS constituting the second switch is electrically connected to the source terminal of the third NMOS or the source terminal of the fourth NMOS.

9. The amplifier of claim 6 , further comprising a third switch having an impedance value lower than a preset second threshold between the first switch and the second switch.

10. The amplifier of claim 9 , wherein the third switch comprises:
a fifth PMOS having an impedance value lower than the second threshold, a drain terminal of the fifth PMOS being electrically connected between a PMOS constituting the first switch and a PMOS constituting the second switch; and
a fifth NMOS having an impedance value lower than the second threshold, a drain terminal of the fifth NMOS being electrically connected between an NMOS constituting the first switch and an NMOS constituting the second switch.

11. An electronic device including an amplifier, wherein the amplifier comprises:
a first resistor electrically connected to an input terminal;
a second resistor electrically connected to an output terminal;
a switch including a complementary metal-oxide-semiconductor (CMOS) and electrically connected to one end of the second resistor; and
a switch control processor comprising a first impedance electrically connected to a gate terminal of a p-type metal-oxide-semiconductor (PMOS) constituting the switch and a bulk terminal of an n-type metal-oxide-semiconductor (NMOS) constituting the switch, and a second impedance electrically connected to a bulk terminal of the PMOS and a gate terminal of the NMOS,
wherein the first impedance and the second impedance correspond to an impedance value higher than a preset first threshold.

12. The electronic device of claim 11 ,
wherein the first impedance comprises a first register and a first inductor, and
wherein the second impedance comprises a second register and a second inductor.

13. The electronic device of claim 11 , wherein the switch control processor comprises:
a first inverter configured to receive a control signal;
a first CMOS in which a gate terminal of a first PMOS and a gate terminal of a first NMOS are electrically connected to an output terminal of the first inverter;
a second inverter electrically connected to the output terminal of the first inverter;
a second CMOS in which a gate terminal of a second PMOS and a gate terminal of a second NMOS are electrically connected to an output terminal of the second inverter;
a first impedance electrically connected to a source terminal of the first PMOS and a source termi

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Sangmin
• Yoon Youngchang
• Kwon Daehoon
• Kim Jaehyup

Classifications

• H10D62/328

  having PN junction gates · CPC title

• H03K17/6872

  using complementary field-effect transistors · CPC title

• H10D64/605 Primary

  Source, drain, or gate electrodes for FETs comprising highly resistive materials · CPC title

• H03G1/0088

  using discontinuously variable devices, e.g. switch-operated · CPC title

• H03F3/45475

  using IC blocks as the active amplifying circuit · CPC title