Free-carrier absorption variable optical attenuators and thermal phase shifters formed by an optical waveguide having multiple passes in an intrinsic region

Patent metadata

Field	Value
Publication number	US-11226504-B2
Application number	US-201916516381-A
Country	US
Kind code	B2
Filing date	Jul 19, 2019
Priority date	Jul 19, 2019
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

The present disclosure provides a multi-pass free-carrier absorption variable optical attenuator device, including: a diode structure including a P-type doped region and an N-type doped region separated by an intrinsic region; and an optical waveguide including a plurality of optical waveguide sections aligned parallel to one another and disposed between the P-type doped region and the N-type doped region and within the intrinsic region of the diode structure. Further, the present disclosure provides a multi-pass thermal phase shifter device, including: a silicon structure including or coupled to one or more heater elements; and an optical waveguide including a plurality of optical waveguide sections aligned parallel to one another and disposed adjacent to the one or more heater elements. Optionally, at least two of the optical waveguide sections have different geometries and are separated by a predetermined gap.

First claim

What is claimed is:

1. A multi-pass free-carrier absorption variable optical attenuator device, comprising:
a diode structure comprising a P-type doped region and an N-type doped region separated by an intrinsic region; and
a single optical waveguide comprising a plurality of optical waveguide sections continuously interconnected to one another and aligned parallel to one another, wherein the plurality of optical waveguide sections are disposed between the P-type doped region and the N-type doped region and the optical waveguide traverse multiple passes within the intrinsic region of the diode structure via the plurality of optical waveguide sections, wherein the plurality of optical waveguide sections is coupled via one or more curved/bent sections of the optical waveguide that each include a single bend with a bend radius that is an order of magnitude less in length than each optical waveguide section.

2. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein the P-type doped region forms a portion of an anode connection of the diode structure.

3. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein the N-type doped region forms a portion of a cathode connection of the diode structure.

4. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein the plurality of optical waveguide sections has a length on the order of hundreds of microns and the one or more connecting curved/bent sections have a length on order of tens of microns.

5. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein at least two of the optical waveguide sections have different geometries and are separated by a predetermined gap.

6. The multi-pass free-carrier absorption variable optical attenuator device of claim 5 , wherein the at least two of the optical waveguide sections have different widths and are separated by the predetermined gap.

7. A multi-pass thermal phase shifter device, comprising:
a silicon structure comprising or coupled to one or more heater elements; and
a single optical waveguide comprising a plurality of optical waveguide sections continuously interconnected to one another and aligned parallel to one another, wherein the plurality of optical waveguide sections are disposed near to the one or more heater elements and the optical waveguide traverse multiple passes in a central area via the plurality of optical waveguide sections, wherein at least two of the optical waveguide sections have a same length and different widths by a factor of two.

8. The multi-pass thermal phase shifter device of claim 7 , wherein the silicon structure comprises one or more P-type doped or N-type doped regions that form the one or more heater elements.

9. The multi-pass thermal phase shifter device of claim 8 , wherein the thermal phase shifter structure contains one or more metallic heater elements in close proximity to the silicon waveguide.

10. The multi-pass thermal phase shifter device of claim 7 , wherein at least two of the optical waveguide sections have different geometries and are separated by a predetermined gap.

11. The multi-pass thermal phase shifter device of claim 10 , wherein the at least two of the optical waveguide sections have different widths and are separated by the predetermined gap.

12. The multi-pass thermal phase shifter device of claim 7 , wherein the optical waveguide has one input on one side of the central area and one output on another side of the central area with the plurality of optical waveguide sections connecting the input and the output.

13. The multi-pass thermal phase shifter device of claim 7 , wherein current flows through the plurality of sections in the optical waveguide for the multiple passes.

14. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein the optical waveguide is a single waveguide with the plurality of optical waveguide sections.

15. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein the optical waveguide has one input on one side of the central area and one output on another side of the central area with the plurality of optical waveguide sections connecting the input and the output.

16. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein current flows through the plurality of sections in the optical waveguide for the multiple passes.

17. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein the multiple passes include at least three passes.

18. The multi-pass free-carrier absorption variable optical attenuator device of claim 1 , wherein at least two of the optical waveguide sections have different widths.

Assignees

• Ciena Corp

Inventors

• O'Keefe Sean Sebastian
• Delisle-Simard Alexandre
• Painchaud Yves

Classifications

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/0156

  using free carrier absorption · CPC title

• G02F1/0147

  based on thermo-optic effects (G02F1/132 takes precedence) · CPC title

• G02F2203/48

  Variable attenuator · CPC title

• G02F2201/17

  Multi-pass arrangements, i.e. arrangements to pass light a plurality of times through the same element, e.g. by using an enhancement cavity · CPC title